Sitnikova Alla Alekseevna

Publications in Math-Net.Ru

1. Change in structure and luminescent properties of ZnSe and ZnCdSe films irradiated by electron beam
   
   Fizika Tverdogo Tela, 64:2 (2022),  228–236
2. Stimulated emission at a wavelength of $2.86 \mu$m from In(Sb, As)/In(Ga, Al)As/GaAs metamorphic quantum wells under optical pumping
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 110:5 (2019),  297–302
3. Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  381–386
4. Optimization of the structural properties and surface morphology of a convex-graded In$_{x}$Al$_{1-x}$As ($x$ = 0.05–0.83) metamorphic buffer layer grown via MBE on GaAs (001)
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  127–132
5. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
   
   Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  56–62
6. Stress generation and relaxation in (Al, Ga)N/6$H$-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:9 (2017),  67–74
7. Study of the parameters of nanoscale layers in nanoheterostructures based on II–VI semiconductor compounds
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1726
8. Growth of silicon nanoclusters in thermal silicon dioxide under annealing in an atmosphere of nitrogen
   
   Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  807–810
9. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71
10. Nanostructured magnetic films of iron oxides fabricated by laser electrodispersion
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  62–69
11. Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  40–48
12. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1024–1030
13. Study of the structure of 3D-ordered macroporous GaN–ZnS:Mn nanocomposite films
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  672–676
14. Large-area crystalline GaN slabs
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:5 (2015),  84–90
15. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  36–43
16. Analysis of stacking faults in gallium nitride by Fourier transform of high-resolution images
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  60–68
17. Structure of nanodiamonds prepared by laser synthesis
    
    Fizika Tverdogo Tela, 55:8 (2013),  1633–1639
18. Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures
    
    Fizika Tverdogo Tela, 55:3 (2013),  591–601
19. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1279–1282
20. Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  267–272
21. Formation of structures from amorphous metallic nanoparticles by dispersing metal drops continuously charging in an electron beam
    
    Zhurnal Tekhnicheskoi Fiziki, 82:6 (2012),  135–141
22. Quantum-confined stark effect and localization of charge carriers in Al$_{0.3}$Ga$_{0.7}$N/Al$_{0.4}$Ga$_{0.6}$N quantum wells with different morphologies
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1022–1026
23. Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  31–36
24. Study of the formation of silicon nanoclusters in silicon dioxide during electron beam irradiation
    
    Fizika Tverdogo Tela, 53:7 (2011),  1399–1405
25. Characteristics of magnetism in nanoporous carbon with palladium clusters
    
    Fizika Tverdogo Tela, 53:5 (2011),  956–963
26. Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1379–1385
27. Photoelectric properties of porous GaN/SiC heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1369–1372
28. Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  829–835
29. Classification of dislocation-related luminescence lines in silicon
    
    Fizika Tverdogo Tela, 34:5 (1992),  1513–1521
30. Mechanism of microdefect formation during growing the dislocation-free silicon monocrystals
    
    Fizika Tverdogo Tela, 33:11 (1991),  3229–3234
31. Coesite nature of rodlike defects in Czochralski-grown and annealed silicon
    
    Fizika Tverdogo Tela, 32:12 (1990),  3659–3667
32. Stress fields and diffraction contrast of rod-like defects in silicon
    
    Fizika Tverdogo Tela, 30:7 (1988),  2040–2045
33. CARBON AND MANGANESE EFFECT ON THE FORMATION STRUCTURAL DEFECTS IN SILICON
    
    Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988),  2272–2274
34. Study of $D$-type microdefects in $\mathrm{Si}$
    
    Fizika Tverdogo Tela, 29:9 (1987),  2623–2628
35. A study of the nature of microdefects in dislocation-free silicon single crystals
    
    Fizika Tverdogo Tela, 28:6 (1986),  1829–1833
36. Diffusion scattering on rod-like defects in oxygen-containing silicon crystals
    
    Fizika Tverdogo Tela, 27:3 (1985),  673–677
37. MEASUREMENT OF THE LOCAL THICKNESS OF CRYSTALS AND OBTAINING PROFILES OF DEFECT DISTRIBUTION ON DEGREES IN ION-ALLOYED SILICON LAYERS BY THE ELECTRON-MICROSCOPY METHOD
    
    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1330–1333


38. Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on $c$-sapphire substrates
    
    Fizika Tverdogo Tela, 55:10 (2013),  2058–2066