Firsov Dmitrii Dmitrievich

Publications in Math-Net.Ru

1. Оптическая спектроскопия метаморфных гетероструктур с квантовыми точками InAs/InGaAs, излучающими в диапазоне $\sim$ 1.55 мкм
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 123:1 (2026),  3–12
2. Effect of Ge nanolayers and quantum dots on photoluminescence properties of GeSiSn/Si heterostructures
   
   Fizika Tverdogo Tela, 67:9 (2025),  1642–1646
3. Infrared photoreflectance of Cd$_{0.3}$Hg$_{0.7}$Te epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  544–547
4. Photoluminescence of arsenic doped epitaxial films of Cd$_{0.3}$Hg$_{0.7}$Te
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  491–494
5. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
6. Investigation of the effect of annealing and composition on infrared photoluminescence of GeSiSn/Si multiple quantum well nanoheterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  765–769
7. Determination of thickness and doping features of multilayer $4H$–$\mathrm{SiC}$ structures by frequency analysis of IR reflection spectra
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:2 (2022),  34–36
8. Registration of infrared photoluminescence spectra using gated integration technique in active baseline subtraction mode
   
   Optics and Spectroscopy, 128:1 (2020),  134–139
9. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
10. Investigation of built-in electric fields at the GaSe/GaAs interface by photoreflectance spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1011–1017
11. Effect of strongly mismatched GaAs and InAs inserts in a InAlAs buffer layer on the structural and optical properties of metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs quantum-confined heterostructures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:6 (2019),  381–386
12. Photoreflectance of indium antimonide
    
    Fizika Tverdogo Tela, 58:12 (2016),  2307–2313
13. Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  33–39
14. Determination of the thickness and spectral dependence of the refractive index of Al$_x$In$_{1-x}$Sb epitaxial layers from reflectance spectra
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  258–263
15. Photomodulation Fourier transform infrared spectroscopy of semiconductor structures: Features of phase correction and application of method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:23 (2013),  87–94
16. Optical Properties of Epitaxial Al$_x$In$_{1-x}$Sb Alloy Layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1481–1485