Voelskow M

Publications in Math-Net.Ru

1. Diffusion of In atoms in SiO$_{2}$ films implanted with As$^{+}$ ions
   
   Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  217–223
2. Electron paramagnetic resonance in Ge/Si heterostructures with Mn-doped quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:4 (2019),  258–264
3. Diffusion and interaction of In and As implanted into SiO$_2$ films
   
   Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1023–1029
4. Specific features of the ion-beam synthesis of Ge nanocrystals in SiO$_{2}$ thin films
   
   Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1289–1294
5. Ion-beam synthesis of InSb nanocrystals in the buried SiO$_2$ layer of a silicon-on-insulator structure
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1228–1233
6. Crystallization induced by thermal annealing with millisecond pulses in silicon-on-insulator films implanted with high doses of hydrogen ions
   
   Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  591–597