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Blokhin Alexey Anatolievich

Publications in Math-Net.Ru

  1. Amplitude noise of 89X nm-range single-mode intracavity-contacted vertical-cavity surface-emitting lasers

    Optics and Spectroscopy, 133:8 (2025),  847–852
  2. Formation of the light extracting surface of IR (850 nm) light-emitting diodes

    Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  888–893
  3. The study of the phase noise of 89X nm-range single-mode intra-cavity contacted vcsels

    Optics and Spectroscopy, 132:12 (2024),  1230–1232
  4. Linewidth of 89Õ nm-range intra-cavity contacted VCSELs

    Optics and Spectroscopy, 132:12 (2024),  1226–1229
  5. Linewidth study of MBE-grown wafer-fused single-mode 1.55 $\mu$m VCSELs

    Optics and Spectroscopy, 131:11 (2023),  1486–1489
  6. Emission linewidth and $\alpha$-factor of 1.55 $\mu$m-range vertical-cavity surface-emitting lasers based on InGaAs/InGaAlAs quantum wells

    Optics and Spectroscopy, 131:8 (2023),  1095–1100
  7. Analysis of the internal optical losses of the 89X nm-range intracavity-contacted vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  43–46
  8. Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots

    Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  592–598
  9. Post-growth technology of multi-junction photovoltaic converters based on A$^3$B$^5$ heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  108–112
  10. 1550 nm range high-speed single-mode vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  814–823
  11. Peculiarities of growth of InAs quantum dot arrays with low surface density by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:24 (2022),  42–46
  12. In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  3–6
  13. High-speed vertically emitting lasers in the spectral range of 1550 nm, implemented in the framework of wafer sintering method

    Kvantovaya Elektronika, 52:10 (2022),  878–884
  14. Investigation of the characteristics of the InGaAs/InAlGaAs superlattice for 1300 nm range vertical-cavity surface emitting lasers

    Zhurnal Tekhnicheskoi Fiziki, 91:12 (2021),  2008–2017
  15. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
  16. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  3–8
  17. Analysis of internal optical loss of 1.3 $\mu$m vertical-cavity surface-emitting laser based on $n^{+}$-InGaAs/$p^{+}$-InGaAs/$p^{+}$-InAlGaAs tunnel junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:23 (2021),  3–7
  18. Impact of transverse optical confinment on performance of 1.55 $\mu$m vertical-cavity surface-emitting lasers with a buried tunnel junction

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:22 (2021),  3–8
  19. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
  20. The design of an electrically-driven single photon source of the 1.3-$\mu$m spectral range based on a vertical microcavity with intracavity contacts

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:5 (2021),  23–27
  21. 1.55 $\mu$m-range vertical cavity surface emitting lasers, manufactured by wafer fusion of heterostuctures grown by solid-source molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1088–1096
  22. A study of the photoresponse in graphene produced by chemical vapor deposition

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  833–840
  23. The effect of a saturable absorber in long-wavelength vertical-cavity surface-emitting lasers fabricated by wafer fusion technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  49–54
  24. A vertical-cavity surface-emitting laser for the 1.55-$\mu$m spectral range with tunnel junction based on $n^{++}$-InGaAs/$p^{++}$-InGaAs/$p^{++}$-InAlGaAs layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:17 (2020),  21–25
  25. Analysis of the internal optical losses of the vertical-cavity surface-emitting laser of the spectral range of 1.55 $\mu$m formed by a plate sintering technique

    Optics and Spectroscopy, 127:1 (2019),  145–149
  26. Influence of output optical losses on the dynamic characteristics of 1.55-$\mu$m wafer-fused vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1128–1134
  27. Studying the formation of antireflection coatings on multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  15–17
  28. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

    Kvantovaya Elektronika, 49:2 (2019),  187–190
  29. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
  30. A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  85–94
  31. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
  32. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
  33. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
  34. Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:9 (2016),  1208–1212
  35. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
  36. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
  37. Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning

    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  89–93
  38. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
  39. Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1697–1703
  40. Precise calibration of thickness and composition of epitaxial AlGaAs heterostructures with vertical-cavity optical microresonators

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:24 (2014),  22–30

© Steklov Math. Inst. of RAS, 2026