Troshkov Sergey Ivanovich

Publications in Math-Net.Ru

1. Charge states of single quantum dots in a microcavity $p-n-p$ heterostructure with the built-in Coulomb blockade
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:5 (2025),  386–392
2. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
3. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
4. Simulation and analysis of the optical characteristics of cylindrical micropillars with InAs/GaAs quantum dots
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:9 (2022),  592–598
5. Source of indistinguishable single photons based on epitaxial InAs/GaAs quantum dots for integration in quantum computing schemes
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:4 (2021),  248–255
6. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
7. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask
   
   Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
8. Highly efficient semiconductor emitter of single photons in the red spectral range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
9. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
10. Features of the selective growth of GaN nanorods on patterned $c$-sapphire substrates of various configurations
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1663–1667
11. Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  515
12. Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1066–1070
13. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1176–1181
14. InGaN/GaN light-emitting diode microwires of submillimeter length
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
15. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
16. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
17. Microdisk injection lasers for the 1.27-$\mu$m spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
18. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:21 (2016),  39–46
19. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
20. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
21. Solar-blind Al$_{x}$Ga$_{1-x}$N ($x>$ 0.45) $p$–$i$–$n$ photodiodes with a polarization-$p$-doped emitter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:12 (2016),  57–63
22. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016),  86–93
23. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
    
    Fizika Tverdogo Tela, 57:9 (2015),  1850–1858
24. Thermal resistance of ultra-small-diameter disk microlasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  688–692
25. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  74–81
26. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
27. Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  17–23
28. Growth specifics of GaAs nanowires in mesa
    
    Fizika Tverdogo Tela, 55:4 (2013),  645–649
29. Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  985–989
30. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  414–419
31. Determination of the thickness and spectral dependence of the refractive index of Al$_x$In$_{1-x}$Sb epitaxial layers from reflectance spectra
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  258–263
32. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
33. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  90–95
34. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
35. Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  10–16
36. Specific features of gallium nitride selective epitaxy in round windows
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:15 (2011),  95–102
37. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
    
    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  981–985
38. Interference of emission from disk-shaped lasers based on quantum-confined AlGaAsSb/InGaAsSb nanoheterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:13 (2010),  89–95
39. APPLICATION OF AS2S3-ORGANIC PHOTORESIST MASK FOR REACTIVE ION ETCHING OF SEMICONDUCTORS-A(III)B(V)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:17 (1992),  85–90
40. Коротковолновая фоточувствительность поверхностно-барьерных структур GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1835–1840
41. Двумерный электронный газ в изотипном гетеропереходе
    
    Fizika i Tekhnika Poluprovodnikov, 24:4 (1990),  638–646
42. Теория квазибаллистического транспорта электронов в биполярном гетеротранзисторе с сильно легированной субмикронной базой
    
    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  508–516
43. Диффузия горячих фотоэлектронов в металл — эффективный механизм потерь в фотоэлементах с барьером Шоттки
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  176–179
44. Long-Wavelength Edge of Spectral Dependence of Photocurrent in the Hetero-$р{-}n$ Junction
    
    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2142–2148
45. Mechanism of the $S$-Type Current-Voltage Characteristic in a Multilayer Isotype GaAs$-$AlGaAs Heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  494–499
46. Calculation of energy-levels of two-dimensional electronic gas in the isotypic heterotransition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:1 (1987),  14–19
47. Theory of $S$-Type Current–Voltage Characteristic in Multilayer Isotype $n^+{-}n$ Heterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1298–1301
48. Theory of Photoelectric Converter with Energy-Gap Gradient in the Space-Charge Region of Hetero-$p{-}n$-Junction
    
    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1262–1270
49. Sublinearity of Capacity–Voltage Characteristics of Sharp Asymmetric $p{-}n$ Junctions
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1589–1596
50. Heterophotocells with Low Value of Saturation Back Current
    
    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  276–281
51. SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION POSITION
    
    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1658–1660