Klimko Grigorii Viktorovich

Publications in Math-Net.Ru

1. Оптическая спектроскопия метаморфных гетероструктур с квантовыми точками InAs/InGaAs, излучающими в диапазоне $\sim$ 1.55 мкм
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 123:1 (2026),  3–12
2. Charge states of single quantum dots in a microcavity $p-n-p$ heterostructure with the built-in Coulomb blockade
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:5 (2025),  386–392
3. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
4. Metamorphic InAs/InGaAs quantum dot heterostructures for single-photon generation in the C-band spectral range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:1 (2025),  37–43
5. Molecular-beam epitaxy of metamorphic InAs/InGaAs quantum-dot heterostructures emitting in the telecom wavelength range
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 120:9 (2024),  694–700
6. Subnanosecond AlGaAs/GaAs photodetectors with Bragg reflectors
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  38–41
7. Luminescence in $p$–$i$–$n$ structures with compensated quantum wells
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  663–673
8. Source of indistinguishable single photons based on epitaxial InAs/GaAs quantum dots for integration in quantum computing schemes
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 113:4 (2021),  248–255
9. Development and study of the $p$–$i$–$n$-диодов GaAs/AlGaAs tunnel diodes for multijunction converters of high-power laser radiation
   
   Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  285–291
10. Highly efficient semiconductor emitter of single photons in the red spectral range
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
11. Single-photon emission from InAs/AlGaAs quantum dots
    
    Fizika Tverdogo Tela, 60:4 (2018),  687–690
12. Red single-photon emission from InAs/AlGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  480
13. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
14. Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:9 (2016),  40–48
15. Molecular beam epitaxy of ZnSSe/CdSe short-period superlattices for III–V/II–VI multijunction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1024–1030
16. Optical studies of carriers’ vertical transport in the alternately-strained ZnS$_{0.4}$Se$_{0.6}$/CdSe superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  364–369
17. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88
18. Molecular beam epitaxy of AlGaAs/Zn(Mn)Se hybrid nanostructures with InAs/AlGaAs quantum dots near the heterovalent interface
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  36–43
19. Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  32–35
20. Generation of coherent terahertz radiation by polarized electron-hole pairs in GaAs/AlGaAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1441–1445
21. Statistical analysis of AFM topographic images of self-assembled quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  921–926