Shul'pina Iren Leonidovna

Publications in Math-Net.Ru

1. Unusual defects in CVD diamond
   
   Fizika Tverdogo Tela, 65:11 (2023),  1874–1881
2. Section methods of X-ray diffraction topography
   
   Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1475–1496
3. The formation and structure of thermomigration silicon channels doped with Ga
   
   Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021),  467–474
4. Structural perfection and composition of gallium-doped thermomigration silicon layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  27–30
5. Results of the experiments on the crystallization of a Ge–Si–Sb solid solution under the conditions of microgravity on the Soyuz–Apollo spacecraft
   
   Fizika Tverdogo Tela, 61:4 (2019),  664–670
6. Block structure and residual stresses in tubular sapphire single crystals grown by the Stepanov method
   
   Fizika Tverdogo Tela, 57:11 (2015),  2190–2196
7. Estimation of quality of GaAs substrates used for constructing semiconductor power devices
   
   Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  149–152
8. Some results of the growth of semiconductor crystals in microgravity conditions (to the 50th anniversary of Yuri Gagarin’s flight into space)
   
   Fizika Tverdogo Tela, 54:7 (2012),  1264–1268
9. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals
   
   Zhurnal Tekhnicheskoi Fiziki, 80:4 (2010),  105–114
10. Study of the nature of the dislocation loop sources by X-ray diffraction topography
    
    Fizika Tverdogo Tela, 34:3 (1992),  708–713
11. Correlation of inhomogeneities in the superconducting properties with the variation of the lattice parameter $C$ in nontwinning $\mathrm{YBa}_{2}\mathrm{Cu}_{3-z}\mathrm{Al}_{y}\mathrm{O}_{6+x}$ crystals
    
    Fizika Tverdogo Tela, 33:10 (1991),  2896–2906
12. Motion of surface damage-induced dislocations in $\mathrm{SiC}$
    
    Fizika Tverdogo Tela, 32:8 (1990),  2311–2315
13. A new type of interference bands in Bragg section topograms
    
    Fizika Tverdogo Tela, 29:5 (1987),  1608–1611
14. ANOMALOUS OBSERVABILITY OF THE X-RAY TOPOGRAPHIC CONTRAST OF DISLOCATION LATTICES OF NONCOMFORMITY IN HETEROEPITAXIAL STRUCTURES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:6 (1987),  1114–1120
15. DEFECT FORMATION IN GAALSB/GASB STRUCTURES FOR PHOTODIODES
    
    Zhurnal Tekhnicheskoi Fiziki, 57:2 (1987),  316–321
16. Dislocation-structure and volt-ampere characteristics of diode smooth $n-In\,As/p-In\,As_{1-x}\,P_{x}$ heterosystems, obtained by the electric liquid epitaxy method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:18 (1987),  1134–1139
17. Origination of structural ruptures in epitaxial layers of silicon-carbide
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:11 (1987),  641–645
18. Dislocation activity of microdefects in silicon single crystals
    
    Fizika Tverdogo Tela, 28:10 (1986),  3192–3194
19. Wave packets and microdefect images in double crystal X-ray topography
    
    Fizika Tverdogo Tela, 28:8 (1986),  2343–2351
20. X-ray topography determination of misfit dislocation sign
    
    Fizika Tverdogo Tela, 28:4 (1986),  1052–1057
21. X-ray topography study of microdefects in silicon
    
    Fizika Tverdogo Tela, 28:2 (1986),  440–446
22. Misfit $60^{\circ}$-degree-dislocations in $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{As}/\mathrm{GaAs} (001)$ type heterostructures
    
    Fizika Tverdogo Tela, 27:10 (1985),  2960–2964
23. DISLOCATION DENSITY AND P-N STRUCTURE PARAMETERS BASED ON GAAS(1-X)SBX SOLID-SOLUTIONS
    
    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2280–2282
24. METHODS OF THE STUDY OF MICRODEFECTS IN SILICON MONOCRYSTALS ON AN X-RAY TOPOGRAPHIC DTS-1 SPECTROMETER
    
    Zhurnal Tekhnicheskoi Fiziki, 53:9 (1983),  1750–1753
25. Solution of the problem of X-ray projection topogram calculation
    
    Dokl. Akad. Nauk SSSR, 240:4 (1978),  836–838