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Publications in Math-Net.Ru
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Коллимирующая оптическая система из полиметилпентена для квантово-каскадного лазера терагерцевого диапазона
Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026), 44–47
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Направленность вывода излучения из кольцевых микролазеров с нарушенной вращательной симметрией
Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026), 27–30
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Terahertz quantum cascade laser in a quantizing magnetic field
Fizika i Tekhnika Poluprovodnikov, 59:7 (2025), 433–438
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Inhomogeneous broadening of energy levels due to fluctuations of doping concentration in quantum-cascade lasers
Fizika i Tekhnika Poluprovodnikov, 59:2 (2025), 79–83
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Enhanced laser pulse confinement in a photoconductive terahertz emitter through near-field sapphire-fiber microlens
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025), 46–48
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Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes
Optics and Spectroscopy, 132:1 (2024), 105–110
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Analysis of TEM image of quantum cascade laser heterostructure grown by metalorganic vapour-phase epitaxy
Fizika i Tekhnika Poluprovodnikov, 58:4 (2024), 179–184
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Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide
Fizika i Tekhnika Poluprovodnikov, 58:2 (2024), 107–113
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Dispersion of a double metal waveguide of a quantum cascade laser in the optical phonon region of GaAs
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024), 3–5
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Significant noise current decrease in a terahertz photoconductive antenna-detector based on a strain-induced InAlAs/InGaAs superlattice
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:8 (2024), 12–14
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Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging
UFN, 194:1 (2024), 2–22
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Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
Optics and Spectroscopy, 131:11 (2023), 1483–1485
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Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes
Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023), 14–16
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Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers
Fizika i Tekhnika Poluprovodnikov, 56:7 (2022), 705–710
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Laser pulse energy localization in a photoconductive THz emitter via sapphire fibers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:23 (2022), 11–13
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3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022), 16–19
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Photoconductive THz detector based on new functional layers in multi-layer heterostructures
Optics and Spectroscopy, 129:6 (2021), 741–746
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3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 989–994
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Simulation on the nonuniform electrical pumping efficiency of THz quantum-cascade lasers
Kvantovaya Elektronika, 51:2 (2021), 164–168
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Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis
Optics and Spectroscopy, 128:7 (2020), 1012–1019
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Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties
Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 902–905
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A photoconductive THz detector based on a superlattice heterostructure with plasmonic amplification
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020), 10–14
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Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
Optics and Spectroscopy, 126:5 (2019), 663–669
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Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states
Kvantovaya Elektronika, 49:10 (2019), 913–918
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Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz
Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1268–1273
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Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation
Fizika i Tekhnika Poluprovodnikov, 52:7 (2018), 723–728
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The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018), 146–157
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Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides
Kvantovaya Elektronika, 48:11 (2018), 1005–1008
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Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1267–1272
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Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 792–797
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Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 540–546
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Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 535–539
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Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017), 48–54
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The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017), 9–14
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Terahertz radiation generation in multilayer quantum-cascade heterostructures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017), 86–94
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Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si$_{3}$N$_{4}$ passivation
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1434–1438
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Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1395–1400
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Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 185–190
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Photoluminescence of heterostructures containing an In$_x$Ga$_{1-x}$As quantum well with a high in content at different excitation powers
Fizika i Tekhnika Poluprovodnikov, 49:9 (2015), 1254–1257
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Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
Fizika i Tekhnika Poluprovodnikov, 49:7 (2015), 932–935
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MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure
Fizika i Tekhnika Poluprovodnikov, 48:1 (2014), 73–76
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Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
Fizika i Tekhnika Poluprovodnikov, 47:9 (2013), 1215–1220
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Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts
Fizika i Tekhnika Poluprovodnikov, 46:4 (2012), 500–506
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Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
Fizika i Tekhnika Poluprovodnikov, 45:10 (2011), 1373–1378
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Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures
Fizika i Tekhnika Poluprovodnikov, 45:5 (2011), 666–671
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