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Khabibullin Rustam Anvarovich

Publications in Math-Net.Ru

  1. Коллимирующая оптическая система из полиметилпентена для квантово-каскадного лазера терагерцевого диапазона

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  44–47
  2. Направленность вывода излучения из кольцевых микролазеров с нарушенной вращательной симметрией

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  27–30
  3. Terahertz quantum cascade laser in a quantizing magnetic field

    Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  433–438
  4. Inhomogeneous broadening of energy levels due to fluctuations of doping concentration in quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 59:2 (2025),  79–83
  5. Enhanced laser pulse confinement in a photoconductive terahertz emitter through near-field sapphire-fiber microlens

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  46–48
  6. Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes

    Optics and Spectroscopy, 132:1 (2024),  105–110
  7. Analysis of TEM image of quantum cascade laser heterostructure grown by metalorganic vapour-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  179–184
  8. Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide

    Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  107–113
  9. Dispersion of a double metal waveguide of a quantum cascade laser in the optical phonon region of GaAs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  3–5
  10. Significant noise current decrease in a terahertz photoconductive antenna-detector based on a strain-induced InAlAs/InGaAs superlattice

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:8 (2024),  12–14
  11. Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging

    UFN, 194:1 (2024),  2–22
  12. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide

    Optics and Spectroscopy, 131:11 (2023),  1483–1485
  13. Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  14–16
  14. Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  705–710
  15. Laser pulse energy localization in a photoconductive THz emitter via sapphire fibers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:23 (2022),  11–13
  16. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
  17. Photoconductive THz detector based on new functional layers in multi-layer heterostructures

    Optics and Spectroscopy, 129:6 (2021),  741–746
  18. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
  19. Simulation on the nonuniform electrical pumping efficiency of THz quantum-cascade lasers

    Kvantovaya Elektronika, 51:2 (2021),  164–168
  20. Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis

    Optics and Spectroscopy, 128:7 (2020),  1012–1019
  21. Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  902–905
  22. A photoconductive THz detector based on a superlattice heterostructure with plasmonic amplification

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  10–14
  23. Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems

    Optics and Spectroscopy, 126:5 (2019),  663–669
  24. Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states

    Kvantovaya Elektronika, 49:10 (2019),  913–918
  25. Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1268–1273
  26. Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  723–728
  27. The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018),  146–157
  28. Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides

    Kvantovaya Elektronika, 48:11 (2018),  1005–1008
  29. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
  30. Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates

    Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  792–797
  31. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
  32. Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  535–539
  33. Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  48–54
  34. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  9–14
  35. Terahertz radiation generation in multilayer quantum-cascade heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
  36. Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si$_{3}$N$_{4}$ passivation

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1434–1438
  37. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
  38. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190
  39. Photoluminescence of heterostructures containing an In$_x$Ga$_{1-x}$As quantum well with a high in content at different excitation powers

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1254–1257
  40. Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  932–935
  41. MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  73–76
  42. Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1215–1220
  43. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  500–506
  44. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1373–1378
  45. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  666–671


© Steklov Math. Inst. of RAS, 2026