Ponomarev Dmitrii Sergeevich

Publications in Math-Net.Ru

1. Terahertz quantum cascade laser in a quantizing magnetic field
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  433–438
2. Features of the mesa-structure formation via electron-beam lithography in semiconductor GaAs-based compounds
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  42–44
3. Enhanced laser pulse confinement in a photoconductive terahertz emitter through near-field sapphire-fiber microlens
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  46–48
4. Application of a hemispherical rutile lens in THz solid immersion microscopy to achieve super-resolution
   
   Optics and Spectroscopy, 132:4 (2024),  393–401
5. Efficient THz emission by a photoconductive emitter with tight photocarrier confinement within high-aspect ratio plasmonic electrodes
   
   Optics and Spectroscopy, 132:1 (2024),  105–110
6. Dispersion of a double metal waveguide of a quantum cascade laser in the optical phonon region of GaAs
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  3–5
7. Significant noise current decrease in a terahertz photoconductive antenna-detector based on a strain-induced InAlAs/InGaAs superlattice
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:8 (2024),  12–14
8. Optical-to-terahertz switches: state of the art and new opportunities for multispectral imaging
   
   UFN, 194:1 (2024),  2–22
9. Active coplanar transmission line based on double-barrier GaAs/AlAs resonant tunneling diodes
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:2 (2023),  14–16
10. Temperature degradation of 2.3, 3.2 and 4.1 THz quantum cascade lasers
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  705–710
11. Laser pulse energy localization in a photoconductive THz emitter via sapphire fibers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:23 (2022),  11–13
12. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
13. Photoconductive THz detector based on new functional layers in multi-layer heterostructures
    
    Optics and Spectroscopy, 129:6 (2021),  741–746
14. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
    
    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
15. Simulation on the nonuniform electrical pumping efficiency of THz quantum-cascade lasers
    
    Kvantovaya Elektronika, 51:2 (2021),  164–168
16. Emission efficiency of terahertz antennas with conventional topology and metal metasurface: a comparative analysis
    
    Optics and Spectroscopy, 128:7 (2020),  1012–1019
17. A photoconductive THz detector based on a superlattice heterostructure with plasmonic amplification
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  10–14
18. Plasmonic photoconductive antennas for terahertz pulsed spectroscopy and imaging systems
    
    Optics and Spectroscopy, 126:5 (2019),  663–669
19. Terahertz microscope based on solid immersion effect for imaging of biological tissues
    
    Optics and Spectroscopy, 126:5 (2019),  642–649
20. Balance-equation method for simulating terahertz quantum-cascade lasers using a wave-function basis with reduced dipole moments of tunnel-coupled states
    
    Kvantovaya Elektronika, 49:10 (2019),  913–918
21. Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1268–1273
22. Ultrafast dynamics of photoexcited charge carriers in In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As superlattices under femtosecond laser excitation
    
    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  723–728
23. The role of excitation photons energy in the photoinduced carrier dynamics in InGaAs/InAlAs superlattice heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018),  146–157
24. Mode loss spectra in THz quantum-cascade lasers with gold- and silver-based double metal waveguides
    
    Kvantovaya Elektronika, 48:11 (2018),  1005–1008
25. Electrical and thermal properties of photoconductive antennas based on In$_{x}$Ga$_{1-x}$As ($x>$ 0.3) with a metamorphic buffer layer for the generation of terahertz radiation
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1267–1272
26. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
27. Terahertz radiation in In$_{0.38}$Ga$_{0.62}$As, grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation
    
    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  535–539
28. Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  48–54
29. The influence of gate length on the electron injection of velocity in an AlGaN/AlN/GaN НЕМТ channel
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  9–14
30. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
31. Electron transport and optical properties of structures with atomic tin nanowires on vicinal GaAs substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  185–190
32. Photoluminescence of heterostructures containing an In$_x$Ga$_{1-x}$As quantum well with a high in content at different excitation powers
    
    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1254–1257
33. Investigation of the optical properties of GaAs with $\delta$-Si doping grown by molecular-beam epitaxy at low temperatures
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  932–935
34. MHEMT with a power-gain cut-off frequency of $f_{\mathrm{max}}$ = 0.63 THz on the basis of a In$_{0.42}$Al$_{0.58}$As/In$_{0.42}$Ga$_{0.58}$As/In$_{0.42}$Al$_{0.58}$As/GaAs nanoheterostructure
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  73–76
35. Electrical and optical properties of near-surface AlGaAs/InGaAs/AlGaAs quantum wells with different quantum-well depths
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1215–1220
36. Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  500–506
37. Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron density
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1373–1378
38. Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  666–671


39. Promising materials of optoelectronics, laser physics, and photonics
    
    Optics and Spectroscopy, 133:3 (2025),  219–220
40. Новые оптические материалы
    
    Optics and Spectroscopy, 128:7 (2020),  867–868