Kulagina Marina Mikhailovna

Publications in Math-Net.Ru

1. Направленность вывода излучения из кольцевых микролазеров с нарушенной вращательной симметрией
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  27–30
2. Charge states of single quantum dots in a microcavity $p-n-p$ heterostructure with the built-in Coulomb blockade
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:5 (2025),  386–392
3. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
4. Surface lasing in micropillar cavity lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  58–62
5. Generation of internally circulating mode in high-power superluminescent diodes with grazing-stripe waveguide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:10 (2025),  18–21
6. Bimodal whispering-gallery mode lasing in micropillar cavity lasers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  41–44
7. Optical amplification in InGaAs quantum well-dot waveguide heterostructures in spectral range of 1010–1075 nm
   
   Fizika i Tekhnika Poluprovodnikov, 58:6 (2024),  313–317
8. Microdisk lasers based on InGaAs/GaAs quantum dots monolithically integrated with a waveguide
   
   Fizika i Tekhnika Poluprovodnikov, 58:2 (2024),  107–113
9. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
10. Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:6 (2024),  23–27
11. Investigation of high-temperature generation of microdisk lasers with optically coupled waveguide
    
    Optics and Spectroscopy, 131:11 (2023),  1483–1485
12. Determination of the temperature and thermal resistance of a half-disk laser diode by measuring pulsed current-voltage characteristics
    
    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  767–772
13. Broadband superluminescent diodes based on multiple InGaAs/GaAs quantum well-dot layers
    
    Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  301–307
14. Investigation of a $p$–$i$–$n$ photodetector with an absorbing medium based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  202–206
15. Analysis of the internal optical losses of the 89X nm-range intracavity-contacted vertical-cavity surface-emitting lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  43–46
16. Two-state lasing in injection microdisks with InAs/InGaAs quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:12 (2022),  40–43
17. Effect of double recess technology on the parameters of HEMT transistors on GaAs and InP substrates
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  890–894
18. Effect of the active region and waveguide design on the performance of edge-emitting lasers based on InGaAs/GaAs quantum well-dots
    
    Fizika i Tekhnika Poluprovodnikov, 55:3 (2021),  256–263
19. Focused ion beam milling of ridge waveguides of edge-emitting semiconductor lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  51–54
20. Investigation of the noise characteristics of vertical-cavity surface-emitting laser with a rhomboidal oxide current aperture for use in a Cs-based compact atomic magnetometer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  3–8
21. Mushroom mesa structure for InAlAs/InGaAs avalanche photodiodes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  36–38
22. An investigation of the sensitivity of a microdisk laser to a change in the refractive index of the environment
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:19 (2021),  30–33
23. Energy consumption at high-frequency modulation of an uncooled InGaAs/GaAs/AlGaAs microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:13 (2021),  28–31
24. Ultimate lasing temperature of microdisk lasers
    
    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  570–574
25. Comparative analysis of injection microdisk lasers based on InGaAsN quantum wells and InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  212–216
26. Lasing of injection microdisks with InAs/InGaAs/GaAs quantum dots transferred to silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:16 (2020),  3–6
27. A micro optocoupler based on a microdisk laser and a photodetector with an active region based on quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:13 (2020),  7–10
28. The effect of self-heating on the modulation characteristics of a microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:11 (2020),  3–7
29. Highly efficient semiconductor emitter of single photons in the red spectral range
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
30. InGaAlP/GaAs injection lasers of orangeoptical range ($\sim$600nm)
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1708–1713
31. Evaluation of the impact of surface recombination in microdisk lasers by means of high-frequency modulation
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1122–1127
32. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance
    
    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
33. InAlAs/InGaAs/InP high-electron-mobility transistors with a composite channel and higher breakdown characteristics
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  29–33
34. Heterobarrier varactors with nonuniformly doped modulation layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  51–54
35. Specific features of the current–voltage characteristic of microdisk lasers based on InGaAs/GaAs quantum well-dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:19 (2019),  37–39
36. Energy consumption for high-frequency switching of a quantum-dot microdisk laser
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  49–51
37. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks
    
    Kvantovaya Elektronika, 49:2 (2019),  187–190
38. Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018),  201–205
39. Reduction of internal loss and thermal resistance in diode lasers with coupled waveguides
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1351–1356
40. Epitaxial InGaAs/InAlAs/AlAs structures for heterobarrier varactors with low leakage current
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  16–23
41. Power characteristics and temperature dependence of the angular beam divergence of lasers with a near-surface active region
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:15 (2018),  46–51
42. A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  85–94
43. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
44. Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1066–1070
45. Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1484–1488
46. Formation of a $p$-type emitter with the involvement of surfactants in GaAs photoelectric converters
    
    Fizika i Tekhnika Poluprovodnikov, 51:5 (2017),  699–703
47. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72
48. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
49. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
    
    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
50. Microdisk injection lasers for the 1.27-$\mu$m spectral range
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
51. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
52. Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1473–1477
53. Thermal resistance of ultra-small-diameter disk microlasers
    
    Fizika i Tekhnika Poluprovodnikov, 49:5 (2015),  688–692
54. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  74–81
55. The effect of sulfide passivation on luminescence from microdisks with quantum wells and quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  86–94
56. Room-temperature lasing in microring cavities with an InAs/InGaAs quantum-dot active region
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1396–1399
57. Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  985–989
58. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  70–77
59. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
60. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012),  22–28
61. Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1405–1409
62. Matrices of 960-nm vertical-cavity surface-emitting lasers
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  836–839
63. Submicron surface relief fabrication technology for epitaxial GaAs structures with thin AlGaAs stop layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:24 (2011),  9–15
64. Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  684–687
65. Highly efficient photovoltaic cells based on In$_{0.53}$Ga$_{0.47}$As alloys with isovalent doping
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  240–245