Sakharov Vladimir Igorevich

Publications in Math-Net.Ru

1. The excitation efficiency for dislocation-related luminescence centers in silicon with oxygen precipitates
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  542–545
2. In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022),  3–6
3. The use of medium-energy atom beams for solid-state PIXE diagnostics
   
   Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021),  163–168
4. Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
   
   Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020),  1386–1392
5. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
6. Dislocation-related photoluminescence in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  165–168
7. Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
   
   Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  161–164
8. Initial stages of growth of barium zirconate titanate and barium stannate titanate films on single-crystal sapphire and silicon carbide
   
   Fizika Tverdogo Tela, 60:10 (2018),  2045–2050
9. Electro- and magnetotransport near a LaAlO$_{3}$/SrTiO$_{3}$ interphase boundary
   
   Fizika Tverdogo Tela, 60:6 (2018),  1223–1226
10. Influence of mechanical stresses on the charge state of the interface in the LaAlO$_{3}$/(001)SrTiO$_{3}$ heterostructures with a distorted stoichiometry
    
    Fizika Tverdogo Tela, 60:1 (2018),  171–174
11. Chemical composition of surface and structure of defects in diamond single crystals produced from detonation nanodiamonds
    
    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  21–24
12. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
13. Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
    
    Fizika Tverdogo Tela, 59:12 (2017),  2352–2357
14. Dislocation-related photoluminescence in silicon implanted with fluorine ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  14–20
15. Elastically strained and relaxed La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ films grown on lanthanum aluminate substrates with different orientations
    
    Fizika Tverdogo Tela, 58:12 (2016),  2469–2475
16. Influence of the substrate temperature on the initial stages of growth of barium strontium titanate films on sapphire
    
    Fizika Tverdogo Tela, 58:2 (2016),  354–359
17. Etching of wrinkled graphene oxide films in noble gas atmosphere under UV irradiation
    
    Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016),  81–86
18. Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  418–420
19. Utilizing of the Medium-Energy Ion Scattering spectrometry for the composition investigation of graphene oxide films on silicon surface
    
    Nanosystems: Physics, Chemistry, Mathematics, 5:1 (2014),  113–116
20. Structure and magneto-transport parameters of partially relaxed and coherently grown La$_{0.67}$Ba$_{0.33}$MnO$_3$ films
    
    Fizika Tverdogo Tela, 55:10 (2013),  1928–1935
21. Electro- and magnetotransport in La$_{0.67}$Ba$_{0.33}$MnO$_3$ nanosized films coherently grown on a vicinally polished (LaAlO$_3$)$_{0.29}$ + (SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{0.71}$ substrate
    
    Fizika Tverdogo Tela, 53:10 (2011),  1945–1949
22. Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles
    
    Zhurnal Tekhnicheskoi Fiziki, 81:5 (2011),  132–138
23. Photoluminescence in silicon implanted with silicon ions at amorphizing doses
    
    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1182–1187
24. Photoluminescence in silicon implanted with erbium ions at an elevated temperature
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1038–1040
25. A study of Raman and rutherford backscattering spectra of amorphous carbon films modified with platinum
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1108–1113
26. SCATTERING OF FAST NEGATIVE HYDROGEN-IONS UNDER THEIR COLLISION WITH ATOMS-HE AND MOLECULES-H2
    
    Zhurnal Tekhnicheskoi Fiziki, 59:5 (1989),  124–127
27. Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  565–569
28. Radiation heat fluxes under conditions of the supersonic inviscid gas flow past three-dimensional bodies
    
    Dokl. Akad. Nauk SSSR, 286:3 (1986),  579–582