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Publications in Math-Net.Ru
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The excitation efficiency for dislocation-related luminescence centers in silicon with oxygen precipitates
Fizika i Tekhnika Poluprovodnikov, 56:6 (2022), 542–545
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In memoriam of E.M. Kruglov and V.V. Filimonov Quantum yield of an avalanche silicon photodiode in the 114–170 and 210–1100 nm wavelength ranges
Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:5 (2022), 3–6
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The use of medium-energy atom beams for solid-state PIXE diagnostics
Zhurnal Tekhnicheskoi Fiziki, 91:1 (2021), 163–168
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Quantum yield of a silicon avalanche photodiode in the wavelength range of 120–170 nm
Zhurnal Tekhnicheskoi Fiziki, 90:8 (2020), 1386–1392
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Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 437–440
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Dislocation-related photoluminescence in silicon implanted with germanium ions
Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 165–168
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Influence of annealing temperature on electrically active centers in silicon implanted with germanium ions
Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 161–164
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Initial stages of growth of barium zirconate titanate and barium stannate titanate films on single-crystal sapphire and silicon carbide
Fizika Tverdogo Tela, 60:10 (2018), 2045–2050
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Electro- and magnetotransport near a LaAlO$_{3}$/SrTiO$_{3}$ interphase boundary
Fizika Tverdogo Tela, 60:6 (2018), 1223–1226
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Influence of mechanical stresses on the charge state of the interface in the LaAlO$_{3}$/(001)SrTiO$_{3}$ heterostructures with a distorted stoichiometry
Fizika Tverdogo Tela, 60:1 (2018), 171–174
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Chemical composition of surface and structure of defects in diamond single crystals produced from detonation nanodiamonds
Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018), 21–24
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The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 44–50
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Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate
Fizika Tverdogo Tela, 59:12 (2017), 2352–2357
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Dislocation-related photoluminescence in silicon implanted with fluorine ions
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017), 14–20
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Elastically strained and relaxed La$_{0.67}$Ca$_{0.33}$MnO$_{3}$ films grown on lanthanum aluminate substrates with different orientations
Fizika Tverdogo Tela, 58:12 (2016), 2469–2475
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Influence of the substrate temperature on the initial stages of growth of barium strontium titanate films on sapphire
Fizika Tverdogo Tela, 58:2 (2016), 354–359
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Etching of wrinkled graphene oxide films in noble gas atmosphere under UV irradiation
Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016), 81–86
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Formation of donor centers upon the annealing of silicon light-emitting structures implanted with oxygen ions
Fizika i Tekhnika Poluprovodnikov, 49:3 (2015), 418–420
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Utilizing of the Medium-Energy Ion Scattering spectrometry for the composition investigation of graphene oxide films on silicon surface
Nanosystems: Physics, Chemistry, Mathematics, 5:1 (2014), 113–116
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Structure and magneto-transport parameters of partially relaxed and coherently grown La$_{0.67}$Ba$_{0.33}$MnO$_3$ films
Fizika Tverdogo Tela, 55:10 (2013), 1928–1935
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Electro- and magnetotransport in La$_{0.67}$Ba$_{0.33}$MnO$_3$ nanosized films coherently grown on a vicinally polished (LaAlO$_3$)$_{0.29}$ + (SrAl$_{0.5}$Ta$_{0.5}$O$_3$)$_{0.71}$ substrate
Fizika Tverdogo Tela, 53:10 (2011), 1945–1949
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Aerosol deposition of detonation nanodiamonds used as nucleation centers for the growth of nanocrystalline diamond films and isolated particles
Zhurnal Tekhnicheskoi Fiziki, 81:5 (2011), 132–138
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Photoluminescence in silicon implanted with erbium ions at an elevated temperature
Fizika i Tekhnika Poluprovodnikov, 45:8 (2011), 1038–1040
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A study of Raman and rutherford backscattering spectra of amorphous carbon films modified with platinum
Fizika i Tekhnika Poluprovodnikov, 44:8 (2010), 1108–1113
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SCATTERING OF FAST NEGATIVE HYDROGEN-IONS UNDER THEIR COLLISION WITH
ATOMS-HE AND MOLECULES-H2
Zhurnal Tekhnicheskoi Fiziki, 59:5 (1989), 124–127
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Potentialities of application of silicon Schottky barriers and planar detectors in spectrometry of low-energy protons
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987), 565–569
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