Nagalyuk Sergei Stepanovich

Publications in Math-Net.Ru

1. Nuclear quadrupole interaction of a negatively charged boron vacancy with near and remote nitrogen nuclear magnetic moments in hexagonal boron nitride
   
   Fizika Tverdogo Tela, 67:11 (2025),  2151–2157
2. NV$^-$-centers in diamond and silicon carbide as the basis for room-temperature masers
   
   Fizika Tverdogo Tela, 67:9 (2025),  1647–1653
3. High-temperature diffusion of beryllium in AlN as an area to solve problem of $p$-type doping and reduce intensity of optical absorption
   
   Fizika Tverdogo Tela, 67:6 (2025),  940–945
4. Isotopically modified silicon carbide: a semiconductor platform for quantum technologies
   
   Fizika Tverdogo Tela, 67:1 (2025),  114–120
5. Dislocation structure of bulk AlN crystals under indentation
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  306–309
6. Synchrotron radiation effect on the AlN thermal conductivity
   
   Fizika Tverdogo Tela, 65:10 (2023),  1848–1853
7. Creation of optically addressable spin centers in hexagonal boron nitride by proton irradiation
   
   Fizika Tverdogo Tela, 64:8 (2022),  1033–1037
8. 6H-SiC nanoparticles integrated with an atomic force microscope for scanning quantum sensors
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:11 (2022),  810–815
9. Growth of hexagonal boron nitride (hBN) on silicon carbide substrates by the physical vapor transport method
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1011–1015
10. The effect of liquid Silicon on the AlN crystal growth
    
    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
11. High-temperature diffusion of the acceptor impurity Be in AlN
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  275–278
12. Effect of mechanical stress on the splitting of spin sublevels in 4H-SiC
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 114:5 (2021),  323–327
13. Origin of green coloration in AlN crystals grown on SiC seeds
    
    Fizika i Tekhnika Poluprovodnikov, 55:6 (2021),  513–517
14. Effect of the beryllium acceptor impurity upon the optical properties of single-crystal AlN
    
    Fizika i Tekhnika Poluprovodnikov, 54:3 (2020),  224–227
15. SiC-based electronics (100th anniversary of the Ioffe Institute)
    
    UFN, 189:8 (2019),  803–848
16. Influence of neutron irradiation on etching of SiC in KOH
    
    Zhurnal Tekhnicheskoi Fiziki, 87:7 (2017),  1104–1106
17. Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016),  91–96
18. Structural perfection of silicon carbide crystals grown on profiled seeds by sublimation method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:21 (2011),  25–32