Ivanov Pavel Anatolievich

Publications in Math-Net.Ru

1. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask
   
   Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
2. Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling
   
   Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  207–211
3. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode
   
   Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
4. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs
   
   Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
5. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
6. Correction of the reverse recovery characteristics of high-voltage 4$H$-SiC junction diodes using proton irradiation
   
   Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  862–864
7. Simulation of transient processes in 4$H$-SiC based semiconductor devices (taking into account the incomplete ionization of dopants in the atlas module of the SILVACO TCAD software package)
   
   Fizika i Tekhnika Poluprovodnikov, 53:3 (2019),  407–410
8. SiC-based electronics (100th anniversary of the Ioffe Institute)
   
   UFN, 189:8 (2019),  803–848
9. Generation of high-voltage pulses by sharp-recovery SiC drift diodes ($n$-base versus $p$-base diodes)
   
   Zhurnal Tekhnicheskoi Fiziki, 88:1 (2018),  89–92
10. On the spatial localization of free electrons in 4$H$-SiC MOSFETS with an $n$ channel
    
    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  105–109
11. The influence of heat treatment on the electrical characteristics of semi-insulating sic layers obtained by irradiating $n$-SiC with high-energy argon ions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:6 (2018),  11–16
12. 4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  3–8
13. Transient switch-off of a 4$H$-SiC bipolar transistor from the deep-saturation mode
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1243–1248
14. Current–voltage characteristics of high-voltage 4$H$-SiC $p^{+}$–$n_{0}$–$n^{+}$ diodes in the avalanche breakdown mode
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  390–394
15. Parameters of pulse generators based on 4H : SiC sharp-recovery drift diodes: The influence of electron drift velocity saturation
    
    Zhurnal Tekhnicheskoi Fiziki, 86:2 (2016),  85–88
16. Field dependence of the electron drift velocity along the hexagonal axis of 4$H$-SiC
    
    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  900–904
17. Parameters of silicon carbide diode avalanche shapers for the picosecond range
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016),  87–94
18. High-voltage sharp-recovery 4H:SiC drift diodes: Theoretical estimation of limiting parameters
    
    Zhurnal Tekhnicheskoi Fiziki, 85:6 (2015),  111–117
19. Dynamic characteristics of 4H-SiC drift step recovery diodes
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1558–1562
20. Capacitance-voltage characteristics of (Al/Ti)/Al$_2$O$_3$/$n$-GaN MIS structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1061–1064
21. Effect of impurity impact ionization on the dynamic characteristics of 4H-SiC $p^+$–$n$–$n^+$ diodes at low temperatures (77 K)
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  999–1002
22. Resistance of 4H-SiC Schottky barriers at high forward-current densities
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  951–955
23. Transient processes in high-voltage silicon carbide bipolar-junction transistors
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1071–1077
24. Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  83–86
25. Low-temperature (77–300 K) current-voltage characteristics of 4H-SiC $p^+$–$p$–$n^+$ diodes: Effect of impurity breakdown in the $p$-type base
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  548–550
26. Subnanosecond 4H-SiC diode current breakers
    
    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  544–547
27. Leakage currents in 4H-SiC JBS diodes
    
    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  411–415
28. Magnetometric diagnostics of ferritin in living matter
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  78–84
29. A DLTS study of 4H-SiC-based $p$–$n$ junctions fabricated by boron implantation
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1358–1362