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Lebedev Alexander Alexandrovich

Publications in Math-Net.Ru

  1. Метод регистрации фазы для визуализации однослойного и двуслойного графена на поверхности SiC

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:6 (2026),  18–21
  2. Application of 6H-SiC/3C-SiC(001) composite substrates for growth of cubic silicon carbide by sublimation method

    Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  294–297
  3. Effect of irradiation temperature on the carrier removal rate in GaN

    Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  227–229
  4. the features of the crystallization of an intermediate silicon layer during the transfer of a thin 3C-SiC(001) layer onto a 6H-SiC(0001) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025),  11–14
  5. Graphene-based biosensors for neurodegenerative dementia detection

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:3 (2025),  13–16
  6. Low-temperature luminescence study of the formation of radiation defects in $4H$-$\mathrm{SiC}$ Schottky diodes

    Fizika Tverdogo Tela, 66:12 (2024),  2193–2196
  7. Temperature dependence of the carrier removal rate in 4H-SiC

    Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  482–484
  8. Effect of proton and electron irradiation on the parameters of gallium nitride Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  49–52
  9. Study of stress relief and strain distribution in graphene films of biosensors for viral infections

    Fizika Tverdogo Tela, 65:12 (2023),  2216–2219
  10. Organic macromolecule on free-standing and epitaxial graphene: HOMO-LUMO model

    Fizika Tverdogo Tela, 65:12 (2023),  2048–2050
  11. Persistent relaxation processes in proton-irradiated 4H-SiC

    Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  743–750
  12. Investigation of the Cr$^{3+}$ impurity luminescence in proton-irradiated $\beta$-Ga$_2$O$_3$

    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  573–576
  13. Effect of adsorbed macromolecule on the carriers mobility in single layer graphene: Dangling bonds model

    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  392–396
  14. Effect of proton irradiation on the properties of high-voltage integrated 4$H$-SiC Schottky diodes at operating temperatures

    Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  53–57
  15. SiC/graphene-based test structures for the Kelvin probe microscopy instrumental function determination

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:4 (2023),  24–27
  16. Electron Diffraction Study of transformation the reconstruction 6$\sqrt{3}$ on 4H-SiC(0001) in quasi-free-standing epitaxial graphene

    Fizika Tverdogo Tela, 64:12 (2022),  2055–2060
  17. Dielectric and optical properties of the cubic SiC, GeC and SnC monocrystals: Model estimations

    Fizika Tverdogo Tela, 64:1 (2022),  70–73
  18. The temperature distribution simulation in the graphene sublimation growth zone on SiC substrate

    Zhurnal Tekhnicheskoi Fiziki, 92:12 (2022),  1776–1780
  19. Chemiluminescence of a functionalized graphene surface

    Optics and Spectroscopy, 130:9 (2022),  1417–1422
  20. Modification in adsorption properties of graphene during the development of viral biosensors

    Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1137–1143
  21. Templates for homoepitaxial growth of 3C-SiC obtained by direct bonding of silicon carbide wafers of differing polytype

    Fizika i Tekhnika Poluprovodnikov, 56:11 (2022),  1094–1098
  22. Electron irradiation hardness of high-voltage 4H-SiC Schottky diodes in the operating temperature range

    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  809–813
  23. Annealing of high voltage 4H-SiC Schottky diodes irradiated with electrons at high temperatures

    Fizika i Tekhnika Poluprovodnikov, 56:4 (2022),  441–445
  24. Study of heavily doped $n$-$3\mathrm{C}$-$\mathrm{SiC}$, epitaxial films grown on $6H$-$\mathrm{SiC}$ semi-insulating substraes by sublimation method

    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  225–228
  25. Effect of pretreatment of the silicon substrate on the properties of GaN films grown by chloride–hydride vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  704–710
  26. Charge transfer in the vertical structures formed by two-dimensional layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  16–18
  27. Formation of iron silicides under graphene grown on the silicon carbide surface

    Fizika Tverdogo Tela, 62:10 (2020),  1726–1730
  28. Intercalation synthesis of cobalt silicides under graphene grown on silicon carbide

    Fizika Tverdogo Tela, 62:3 (2020),  462–471
  29. Biplanar epitaxial AlN/SiC/$(n,p)$SiC structures for high-temperature functional electronic devices

    Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020),  450–455
  30. Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes

    Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  264–267
  31. Raman studies of graphene films grown on 4$H$-SiC subjected to deposition of Ni

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1388
  32. Characteristics of Schottky rectifier diodes based on silicon carbide at elevated temperatures

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1364–1367
  33. Model estimates of the quantum capacitance of graphene-like nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:23 (2020),  19–21
  34. Terahertz near-field response in graphene ribbons

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  29–32
  35. Model estimates of the quantum capacitance of graphene nanostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  7–9
  36. Studying the sensitivity of graphene for biosensor applications

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  3–6
  37. Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide Schottky diodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  35–37
  38. Electron diffraction study of epitaxial graphene formed by thermal destruction of SiC(0001) in an Ar environment and in high vacuum

    Fizika Tverdogo Tela, 61:10 (2019),  1978–1984
  39. Cobalt intercalation of graphene on silicon carbide

    Fizika Tverdogo Tela, 61:7 (2019),  1374–1384
  40. Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films

    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1940–1946
  41. Effect of irradiation with 15-MeV protons on low frequency noise in power SiC MOSFETs

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1604–1608
  42. Impact of high energy elctron irradiation on surge currents in 4$H$-SiC JBS Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1448–1452
  43. Low-temperature annealing of lightly doped $n$-4$H$-SiC layers after irradiation with fast electrons

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  991–994
  44. Coulomb electron interaction between an adsorbate and substrate: a model of a surface dimer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  21–23
  45. A study of the influence exerted by structural defects on photoluminescence spectra in $n$-3$C$-SiC

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  28–30
  46. A model of a surface dimer in the problem of adsorption

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:9 (2019),  40–42
  47. SiC-based electronics (100th anniversary of the Ioffe Institute)

    UFN, 189:8 (2019),  803–848
  48. Field effect in monolayer graphene associated with the formation of graphene–water interface

    Fizika Tverdogo Tela, 60:12 (2018),  2474–2477
  49. Intercalation of iron atoms under graphene formed on silicon carbide

    Fizika Tverdogo Tela, 60:7 (2018),  1423–1430
  50. Electron-diffraction study of the structure of epitaxial graphene grown by the method of thermal destruction of 6$H$- and 4$H$-SiC (0001) in vacuum

    Fizika Tverdogo Tela, 60:7 (2018),  1403–1408
  51. Graphene on silicon carbide as a basis for gas- and biosensor applications

    Nanosystems: Physics, Chemistry, Mathematics, 9:1 (2018),  95–97
  52. Radiation-induced damage of silicon-carbide diodes by high-energy particles

    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1651–1655
  53. Galvanic and capacitive effects in $n$-SiC conductivity compensation by radiation-induced defects

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1532–1534
  54. Transition between electron localization and antilocalization and manifestation of the Berry phase in graphene on a SiC surface

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1512–1517
  55. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
  56. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
  57. Formation of radiation defects by proton braking in lightly doped $n$- and $p$-SiC layers

    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  327–332
  58. The role of the charge state of surface atoms of a metal substrate in doping of quasi-free-standing graphene

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:23 (2018),  90–95
  59. Local anodic oxidation of graphene layers on SiC

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:9 (2018),  34–40
  60. Field effects in graphene in an interface contact with aqueous solutions of acetic acid and potassium hydroxide

    Fizika Tverdogo Tela, 59:10 (2017),  2063–2065
  61. Study of the crystal and electronic structure of graphene films grown on 6$H$-SiC (0001)

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1116–1124
  62. Effects of irradiation with 8-MeV protons on $n$-3$C$-SiC heteroepitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1088–1090
  63. Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  311–316
  64. A study of the effect of electron and proton irradiation on 4$H$-SiC device structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:22 (2017),  63–67
  65. Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017),  64–72
  66. Transport properties of graphene in the region of its interface with water surface

    Fizika Tverdogo Tela, 58:7 (2016),  1432–1435
  67. Supersensitive graphene-based gas sensor

    Zhurnal Tekhnicheskoi Fiziki, 86:3 (2016),  135–139
  68. Growth, study, and device application prospects of graphene on SiC substrates

    Nanosystems: Physics, Chemistry, Mathematics, 7:1 (2016),  30–36
  69. Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6$H$-SiC (000$\bar1$) in vacuum

    Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  967–972
  70. Development of a spinodal decomposition model for the example of a heterostructure based on silicon carbide polytypes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016),  66–71
  71. Graphene-based biosensors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  28–35
  72. On the electronic state of an atom adsorbed on epitaxial graphene formed on metallic and semiconductor substrates

    Fizika Tverdogo Tela, 57:1 (2015),  200–205
  73. Radiation hardness of $n$-GaN Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1386–1388
  74. Effect of irradiation with MeV protons and electrons on the conductivity compensation and photoluminescence of moderately doped $p$-4H-SiC (CVD)

    Fizika i Tekhnika Poluprovodnikov, 49:9 (2015),  1198–1201
  75. Irradiation of 4H-SiC UV detectors with heavy ions

    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  550–556
  76. Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  89–94
  77. On the relationship between radiation-stimulated photoluminescence and nitrogen atoms in $p$-4H-SiC

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  61–67
  78. Evaluation of the effect of adsorption on the conductivity of single-layer graphene formed on a semiconductor substrate

    Fizika Tverdogo Tela, 56:12 (2014),  2486–2489
  79. Comparison of the radiation hardness of silicon and silicon carbide

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1329–1331
  80. Conductivity compensation in $n$-4H-SiC (CVD) under irradiation with 0.9-MeV electrons

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1033–1036
  81. On the possibility of spinodal decomposition in the transition layer of a heterostructure based on silicon-carbide polytypes

    Fizika i Tekhnika Poluprovodnikov, 48:6 (2014),  721–724
  82. On the self-structuring of single-crystal silicon wafers under inductive heating in vacuum

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  364–368
  83. Irradiation of sublimation-grown $p$-SiC with 0.9-MeV electrons

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014),  45–49
  84. Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1554–1558
  85. Comparative study of 3C-SiC layers sublimation-grown on a 6H-SiC substrate

    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1279–1282
  86. Structure and transport properties of nanocarbon films prepared by sublimation on a 6H-SiC surface

    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  267–272
  87. Radiation resistance of wide-gap materials as exemplified by SiC nuclear radiation detectors

    Zhurnal Tekhnicheskoi Fiziki, 82:4 (2012),  131–135
  88. On the possibility of the experimental determination of spontaneous polarization for silicon carbide polytypes

    Fizika i Tekhnika Poluprovodnikov, 46:7 (2012),  937–939
  89. Similarities and distinctions of defect production by fast electron and proton irradiation: moderately doped silicon and silicon carbide of $n$-type

    Fizika i Tekhnika Poluprovodnikov, 46:4 (2012),  473–481
  90. Annealing of radiation-compensated silicon carbide

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:19 (2012),  90–94
  91. On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperatures

    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1422–1426
  92. Conductivity compensation in $p$-6H-SiC in irradiation with 8-MeV protons

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1188–1190
  93. Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  847–851
  94. Vacancy model of micropipe annihilation in epitaxial silicon carbide layers

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  743–746
  95. Low-temperature transport properties of multigraphene films grown on the SiC surface by sublimation

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  634–638
  96. Energy distribution of recoil atoms and formation of radiation defects in silicon carbide films under proton irradiation

    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  145–148
  97. On stability of self-sustained volume discharge in working mixtures of non-chain electrochemical HF laser

    Kvantovaya Elektronika, 41:8 (2011),  703–708
  98. Electrical characteristics of multigraphene films grown on high-resistivity silicon carbide substrates

    Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1436–1438
  99. The problem of uniformity of properties of 4H-SiC CVD films

    Fizika i Tekhnika Poluprovodnikov, 44:7 (2010),  1002–1006
  100. Effect of microwave treatment on current flow mechanisms in Au–TiB$_x$–Al–Ti–$n^+$–$n$–$n^+$-GaN–Al$_2$O$_3$ ohmic contacts

    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  775–781
  101. Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  706–712
  102. Energy characteristics of SiC(0001)–intercalated hydrogen–graphene system

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:18 (2010),  55–59
  103. Use of sublimation epitaxy for obtaining volume 3C-SiC crystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  71–77
  104. Studying edge luminescence of $n$-3C-SiC epilayers grown on 6H-SiC substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  32–37
  105. HIDDEN ANISOTROPY OF EMITTING TRANSITIONS IN POROUS SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:16 (1992),  60–63
  106. NATURE OF P-LAYER FORMED IN SEMICONDUCTING WAFER INTERFACES UNDER SOLID-PHASE DIRECT SILICON BONDING

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 18:14 (1992),  51–56
  107. Исследование поведения примесей марганца и никеля при диффузионном легировании кремния

    Fizika i Tekhnika Poluprovodnikov, 25:6 (1991),  1075–1078
  108. Влияние изовалентного легирования индием на свойства эпитаксиальных слоев арсенида галлия, выращенного из газовой фазы

    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  898–903
  109. Рекомбинационные процессы в $6H$-SiC $p{-}n$-структурах и влияние на них глубоких центров

    Fizika i Tekhnika Poluprovodnikov, 25:3 (1991),  479–486
  110. Высокотемпературный диод Шоттки Au$-$SiC-$6H$

    Fizika i Tekhnika Poluprovodnikov, 25:2 (1991),  328–333
  111. Связь желтой электролюминесценции в $6H$-SiC с глубокими центрами

    Fizika i Tekhnika Poluprovodnikov, 24:8 (1990),  1384–1390
  112. Новый способ обработки спектров DLTS

    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  549–552
  113. HYDROPHILIZATION OF A SURFACE UNDER THE DIRECT SILICON FUSION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:4 (1990),  1–4
  114. Влияние кислорода и углерода на поведение марганца в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2227–2229
  115. Исследование скоплений компенсирующих центров в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 23:11 (1989),  2066–2069
  116. Влияние кислорода на образование акцепторных уровней никеля в $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  919–921
  117. Электронно-механический резонанс на глубоких центрах в $p^{+}{-}p^{0}{-}\pi{-}n^{0}$-структурах арсенида галлия

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  897–899
  118. Self-compensation of iron centers in silicon under optical pumping

    Fizika Tverdogo Tela, 30:7 (1988),  2076–2084
  119. CARBON AND MANGANESE EFFECT ON THE FORMATION STRUCTURAL DEFECTS IN SILICON

    Zhurnal Tekhnicheskoi Fiziki, 58:11 (1988),  2272–2274
  120. Электрические характеристики эпитаксиальных $p^{+}{-}n{-}n^{+}$-структур на основе карбида кремния политипа $6H$

    Fizika i Tekhnika Poluprovodnikov, 22:2 (1988),  298–300
  121. Электростатические свойства SiC-$6H$-структур с резким $p{-}n$-переходом

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  133–136
  122. Влияние ориентированной деформации и $\gamma$-облучения на уровни платины в кремнии

    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  16–19
  123. SUPER HIGH-VOLTAGE SILICOR R-P-TRANSITIONS WITH THE BREAKDOWN PRESSURE HIGHER-THAN-20-KV

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:11 (1988),  972–975
  124. PREDOMINANT RECOMBINATION CENTERS IN PARA-GAAS LAYERS, OBTAINED BY PRECIPITATION FROM THE GAS-PHASE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  181–185
  125. Properties of high pressure deformed silicon crystals

    Fizika Tverdogo Tela, 29:5 (1987),  1486–1491
  126. Photoionization Cross-Sections for Nickel Levels in Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2237–2239
  127. Method to Increase Resolving Power of Nonstationary Capacity Spectroscopy of Deep Levels in Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2228–2229
  128. Piezocapacity Spectroscopy of Radiation-Induced Defects in $p$-Type Si

    Fizika i Tekhnika Poluprovodnikov, 21:12 (1987),  2149–2151
  129. Effect of Thermal Treatment on the Density of Radiation-Induced Defects in the Dielectric and on the Semiconductor Surface of Silicon MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  836–841
  130. Effect of Uniaxial Pressure on Nonstationary Capacity Spectroscopy of Deep Levels in Si$\langle$Zn$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 21:2 (1987),  321–324
  131. Study of Electro physical Properties of Silicon MDS Structures Irradiated by $\gamma$-Quanta in the Presence of an Electric Field in the Dielectric

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  23–29
  132. Study of the Effect of $\gamma$-Irradiation on the Spectrum of Deep Levels in Zinc-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:1 (1987),  18–22
  133. New paramagnetic centers in nickel-alloyed silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:21 (1987),  1322–1326
  134. Capacity Spectroscopy of p${-}$n Junctions Based on Epitaxial $4H$-SiC Produced by Ionic Implantation of Al

    Fizika i Tekhnika Poluprovodnikov, 20:12 (1986),  2169–2172
  135. Effect of Deep Levels on Breakdown Voltage of Diodes

    Fizika i Tekhnika Poluprovodnikov, 20:11 (1986),  2122–2125
  136. Determination of Deep-Level Concentration in Semiconductor Bulk Using Nonstationary Capacity-Spectroscopy Data under Constant Capacity

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1806–1810
  137. Structures with Ionically Implanted p${-}$n Junction Based on Epitaxial $4H$-SiC with $S$-Like Current–Voltage Characteristic

    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1654–1657
  138. Study of Current-Voltage Characteristics of Diode Structures Based on Silicon Carbide

    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  844–848
  139. Capacity Spectroscopy of Deep Levels in Semiconductors under Photothermal Emission of Charge Carriers

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  683–686
  140. Study of Iron Interaction with Other Elements in Silicon

    Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  185–186
  141. SOLID GOLD SOLUTION DECAY IN SILICON .2. DATA ON NUCLEAR MOMENT OPTICAL POLARIZATION STUDY

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2162–2169
  142. SOLID GOLD SOLUTION DECAY IN SILICON .1. DATA ON NUCLEAR-SPIN-LATTICE RELAXATION STUDY

    Zhurnal Tekhnicheskoi Fiziki, 55:11 (1985),  2149–2161
  143. Effect of Correlated Inhomogeneous Distribution of Surface Recombination Centers and Charges in Oxide on Minority Charge Carrier Generation under Capacitance Spectroscopy in MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 19:11 (1985),  1971–1975
  144. Effect of Minority Charge Carrier Generation on the Capacity Spectroscopy of Surface States in MDS Structures

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1791–1795
  145. Study of Thermal Defects in High-Resistance $n$-Type Si

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1709–1711
  146. DLTS Study of the $\gamma$-Irradiation Effect on the Properties of $n$-Туре Si$\langle$Mn$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1617–1619
  147. Effect of Series Resistance of a Diode on Unsteady Capacitance Measurements of Deep-Level Parameters

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1382–1385
  148. Capacitance Measurements of Deep-Impurity Distribution Profile and Surface Concentration in Thin Doped Layers

    Fizika i Tekhnika Poluprovodnikov, 19:8 (1985),  1375–1381
  149. Capacitance and Photoelectric Spectroscopy of Thallium Levels in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1273–1276
  150. Effect of High Hydrostatic Pressure on Activation Energy of Mn Levels in $n$-Туре Si

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1159–1161
  151. Interaction of Oxygen with Manganese in $n$-Si

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1158–1159
  152. Evaluation of the Profile of Silicon Oxidation-Degree Distribution in Si$-$SiO$_{2}$ Transient Layers

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1156–1158
  153. Study of Deep-Center Density in Cathode-Sputtered SiO$_x$ Films Depending on the Degree of Silicon Oxidation

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  1087–1091
  154. Effect of Plastic Deformation on the State of Oxygen and Carbon in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:6 (1985),  982–986
  155. Photoconduction of Selenium-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  919–922
  156. Capacity Spectroscopy of Deep Levels in $n$-Si(Cr)

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  917–919
  157. Capacity Spectroscopy of Radiation-Induced Defects Produced in Si$-$SiO$_{2}$ Transient Layer under Cathode Sputterig

    Fizika i Tekhnika Poluprovodnikov, 19:5 (1985),  831–835
  158. Energy Levels of Selenium in Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  597–600
  159. Study of Fe in $n$-Type Si by ESR and Capacity Methods

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  349–350
  160. Parameters of Deep Levels in Si$\langle$V$\rangle$

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  338–340
  161. Deep Levels in Silicon Related with Manganese

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  213–216
  162. Photoconduction of Chromium-Doped Silicon

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  162–164
  163. Capacity-Spectroscopic Study of Deep Levels in SiC

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  114–117
  164. Влияние высокого давления на состояние оптически активного кислорода в кремнии при термообработке

    Fizika i Tekhnika Poluprovodnikov, 18:7 (1984),  1306–1307
  165. RECTIFIER DIODE BASED ON SILICON-CARBIDE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:17 (1984),  1053–1056
  166. FACTORS, CONTRIBUTING TO 2ND-PHASE FORMATIONS IN NONCRUCIBLE SILICON

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:14 (1984),  837–840
  167. Емкостная спектроскопия глубоких уровней, возникающих в кремнии после диффузии серы

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2152–2155
  168. Фото-ЭПР кремния, легированного железом, в обратно смещенном $p{-}n$-переходе

    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1344–1347

  169. Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate

    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1383

© Steklov Math. Inst. of RAS, 2026