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Publications in Math-Net.Ru
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Description of the magnetization oscillations of a silicon nanostructure in weak fields at room temperature. the Lifshitz–Kosevich formula with variable effective carrier mass
Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1331–1335
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High temperature quantum kinetic effects in silicon nanosandwiches
Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 473
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Room temperature de Haas–van Alphen effect in silicon nanosandwiches
Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1047–1054
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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure
Fizika i Tekhnika Poluprovodnikov, 49:5 (2015), 663–671
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Optically detected cyclotron resonance in heavily boron-doped silicon nanostructures on $n$-Si (100)
Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1646–1653
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Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures
Fizika i Tekhnika Poluprovodnikov, 48:11 (2014), 1503–1516
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Features of the electroluminescence spectra of quantum-confined silicon $p^+$–$n$ heterojunctions in the infrared spectral region
Fizika i Tekhnika Poluprovodnikov, 47:11 (2013), 1530–1535
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Infrared luminescence from silicon nanostructures heavily doped with boron
Fizika i Tekhnika Poluprovodnikov, 46:3 (2012), 289–303
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Spin interference of holes in silicon nanosandwiches
Fizika i Tekhnika Poluprovodnikov, 46:1 (2012), 77–89
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On a new mechanism of inhomogeneous broadening in the optical spectra of deep defects in dielectric glasses
Fizika Tverdogo Tela, 34:11 (1992), 3313–3318
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Influence of the lattice frequency change on the optical properties of non-bridging oxygen centers in glassy $\mathrm{SiO}_{2}$
Fizika Tverdogo Tela, 32:12 (1990), 3654–3658
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Spectral manifestations of quadratic vibronic interaction on deep defects in glasses
Fizika Tverdogo Tela, 32:4 (1990), 1216–1219
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Реакции центров золота с отрицательной корреляционной энергией
в твердых растворах Si$-$Ge
Fizika i Tekhnika Poluprovodnikov, 23:3 (1989), 525–531
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Self-compensation of iron centers in silicon under optical pumping
Fizika Tverdogo Tela, 30:7 (1988), 2076–2084
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Study of the effect of oxides and polycrystal layers on the carrier life-span in monocrystal silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987), 1025–1029
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Study of dislocation dangling bond annealing in silicon by optical polarization of the nuclear moment technique
Fizika Tverdogo Tela, 28:4 (1986), 1190–1193
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Optical polarization of nuclear moments in silicon with one-dimensional defects
Fizika Tverdogo Tela, 28:2 (1986), 634–637
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Reactions of Gold Centers under Optical Pumping of Silicon–Germanium Solid Solutions
Fizika i Tekhnika Poluprovodnikov, 20:4 (1986), 745–747
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FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF
OBTAINING PLANAR SILICON P-N-JUNCTIONS
Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2064–2066
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Semiconductor–Dielectric Transition in Lightly Doped Thermally Treated Semiconductors
Fizika i Tekhnika Poluprovodnikov, 19:4 (1985), 611–615
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Spin-dependent negative photo-conductivity in silicon
Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:9 (1985), 568–573
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Energetic and structural models of microdefects in germanate glasses
Dokl. Akad. Nauk SSSR, 207:6 (1972), 1318–1321
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