Leiderman Ada Yul'evna

Publications in Math-Net.Ru

1. Peculiarities of the current–voltage characteristic of $n$-GaP–$p$-(InSb)$_{1-x}$(Sn$_{2}$)$_{x}$ heterostructures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:22 (2020),  23–26
2. Research of the dependence of current-voltage characteristics of $p$-Si-$n$-(Si$_2$)$_{1-x-y}$(Ge$_2$)$_{x}$(ZnSe)$_{y}$-structures on temperature
   
   Comp. nanotechnol., 6:3 (2019),  16–21
3. Effect of injection depletion in $p$-Si–$n$-(Si$_{2}$)$_{1-x}$(ZnSe)$_{x}$ (0 $\le x\le$ 0.01) heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1066–1070
4. Growth, structure, and properties of GaAs-based (GaAs)$_{1-x-y}$(Ge$_{2}$)$_{x}$(ZnSe)$_{y}$ epitaxial films
   
   Fizika i Tekhnika Poluprovodnikov, 50:1 (2016),  60–66
5. The thermovoltaic effect in variband solid solution Si$_{1-x}$Ge$_{x}$ (0 $\le x\le$ 1)
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  21–27
6. Effect of injection depletion in $p$–$n$ heterostructures based on solid solutions (Si$_2$)$_{1-x-y}$(Ge$_2$)$_x$(GaAs)$_y$, (Si$_2$)$_{1-x}$(CdS)$_x$, (InSb)$_{1-x}$(Sn$_2$)$_x$, and CdTe$_{1-x}$S$_x$
   
   Fizika Tverdogo Tela, 56:12 (2014),  2319–2325
7. Mechanism of charge transfer in injection photodiodes based on the In–$n^+$–CdS-$n$-CdS$_x$Te$_{1-x}$–$p$-Zn$_x$Cd$_{1-x}$Te–Mo structure
   
   Fizika Tverdogo Tela, 55:8 (2013),  1524–1535
8. Growth of (GaAs)$_{1-x}$(ZnSe)$_x$ solid solution films and investigation of their structural and some photoelectric properties
   
   Fizika Tverdogo Tela, 53:10 (2011),  1910–1919
9. Study of the current-voltage characteristic of the $n$-CdS/$p$-CdTe heterostructure depending on temperature
   
   Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  330–334
10. On the Nature of Dark Currents in the Structures with Schottky Barriers Hydrogenated Silicon
    
    Fizika i Tekhnika Poluprovodnikov, 18:2 (1984),  373–376
11. Instability of uniform steady state of a semiconductor due to the thermal deformation of its forbidden zone
    
    Dokl. Akad. Nauk SSSR, 201:4 (1971),  820–822