Demakov Konstantin Dmitrievich

Publications in Math-Net.Ru

1. On the generation of charge-carrier recombination centers in the sapphire substrates of silicon-on-sapphire structures
   
   Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1124–1128
2. Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
   
   Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  264–266
3. Crystalline quality improvement in silicon films on sapphire using recrystallization from the silicon-sapphire interface
   
   Fizika i Tekhnika Poluprovodnikov, 44:10 (2010),  1433–1435
4. Высокотемпературная ионная имплантация мышьяка в кремний
   
   Fizika i Tekhnika Poluprovodnikov, 24:6 (1990),  1132–1133
5. SYNTHESIS OF SI3N4 AMORPHOUS FILMS DURING NITROGEN ION-IMPLANTATION TO SILICON
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:23 (1990),  43–45
6. Исследование распределения аморфной и кристаллической фазы ионно-синтезированного SiC в Si
   
   Fizika i Tekhnika Poluprovodnikov, 22:4 (1988),  731–732
7. Electric Properties of $p{-}n{-}n^{+}$ Structure in Silicon Carbide Produced by Ionic Doping of Aluminum
   
   Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1685–1689
8. Study of the Formation of $\beta$-SiC Monocrystalline Layers on Si by the Method of Highly Intense Ionic Doping
   
   Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  920–922
9. Synthesis of Monocrystalline Silicon Carbide by Single-Step Equipment of Highly Intense Ion Doping
   
   Fizika i Tekhnika Poluprovodnikov, 20:1 (1986),  149–152
10. Vibration structure of $D_{1}$-spectra in cubic $\mathrm{SiC}$
    
    Fizika Tverdogo Tela, 27:10 (1985),  3170–3172
11. $\mathrm{SiC}$ layer structure reduction after ion implantation
    
    Fizika Tverdogo Tela, 26:5 (1984),  1575–1577
12. Cathodoluminescence of SiC Ion-Doped by Aland Ar
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  700–703
13. The effect of channelling on the distribution of electrically active boron and phosphorus atoms intruded into silicon single crystals
    
    Dokl. Akad. Nauk SSSR, 197:2 (1971),  319–322