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Publications in Math-Net.Ru
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Application of carbon for the formation of discrete aluminum-based zones during their thermomigration in silicon
Fizika i Tekhnika Poluprovodnikov, 59:5 (2025), 302–305
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Morphology and electrical parameters of thin aluminum films deposited on substrates at temperatures from 77 to 800 K
Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:4 (2025), 42–45
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Transformation of the circular zone during thermal migration in silicon in the direction $\langle$100$\rangle$
Fizika i Tekhnika Poluprovodnikov, 58:9 (2024), 489–492
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The effect of transformation of a square-shaped linear zone during its migration through a $\{100\}$ silicon wafer
Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024), 17–19
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Creation of a homogeneous temperature gradient field for the implementation of the thermomigration method in silicon
Fizika Tverdogo Tela, 65:12 (2023), 2051–2054
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The formation and structure of thermomigration silicon channels doped with Ga
Zhurnal Tekhnicheskoi Fiziki, 91:3 (2021), 467–474
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Structural perfection and composition of gallium-doped thermomigration silicon layers
Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020), 27–30
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On the limit of the injection ability of silicon $p^{+}$–$n$ junctions as a result of fundamental physical effects
Fizika i Tekhnika Poluprovodnikov, 51:6 (2017), 830–834
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Crystal defects in solar cells produced by the method of thermomigration
Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 297–301
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Manifestations of induced instability of phase boundaries during thermomigration
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016), 49–56
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