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Publications in Math-Net.Ru
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Mechanism of charge transfer in injection photodetectors based on the M(In)–$n$-CdS–$p$-Si–M(In) structure
Fizika Tverdogo Tela, 57:4 (2015), 646–660
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Injection photodiode based on a $p$-Si–$n$-CdS–$n^+$-CdS structure
Fizika i Tekhnika Poluprovodnikov, 48:10 (2014), 1398–1404
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Photoelectric properties of an injection photodetector based on alloys of II–VI compounds
Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 369–374
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Mechanism of charge transfer in injection photodiodes based on the In–$n^+$–CdS-$n$-CdS$_x$Te$_{1-x}$–$p$-Zn$_x$Cd$_{1-x}$Te–Mo structure
Fizika Tverdogo Tela, 55:8 (2013), 1524–1535
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Injection photodiode based on an $n$-CdS/$p$-CdTe heterostructure
Fizika i Tekhnika Poluprovodnikov, 47:6 (2013), 815–820
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Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films
Fizika Tverdogo Tela, 54:9 (2012), 1643–1654
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Injection photodiode based on $p$-CdTe film
Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012), 70–76
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Study of the current-voltage characteristic of the $n$-CdS/$p$-CdTe heterostructure depending on temperature
Fizika i Tekhnika Poluprovodnikov, 44:3 (2010), 330–334
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Light emitting diode with radiation hysteresis
Dokl. Akad. Nauk SSSR, 188:2 (1969), 304–307
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