Osvenskii Vladimir Borisovich

Publications in Math-Net.Ru

1. Temperature dependence of the lattice parameters of Cu$_{2-x}$Se (0.03 $\le x\le$ 0.23) powders fabricated by mechanochemical synthesis
   
   Fizika Tverdogo Tela, 60:11 (2018),  2255–2259
2. Thermal conductivity of Cu$_2$Se taking into account the influence of mobile copper ions
   
   Fizika Tverdogo Tela, 59:10 (2017),  2071–2076
3. Temperature fields control in the process of spark plasma sintering of thermoelectrics
   
   Zhurnal Tekhnicheskoi Fiziki, 87:4 (2017),  584–592
4. Optimization of a segmented generating leg
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1052–1054
5. Contact resistance in spark plasma sintered segmented legs
   
   Fizika i Tekhnika Poluprovodnikov, 51:8 (2017),  1038–1040
6. Experimental and theoretical study of the thermoelectric properties of copper selenide
   
   Fizika i Tekhnika Poluprovodnikov, 51:7 (2017),  892–895
7. Simulation of the field-activated sintering of thermoelectric materials
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  756–758
8. Calculation of the thermal conductivity of nanostructured Bi$_2$Te$_3$ with the real phonon spectrum taken into account
   
   Fizika i Tekhnika Poluprovodnikov, 51:6 (2017),  729–732
9. Field-assisted sintering of effective materials for alternative power engineering
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:14 (2017),  47–54
10. Effect of porosity on the thermoelectric efficiency of PbTe
    
    Fizika Tverdogo Tela, 58:8 (2016),  1483–1489
11. Temperature and current density distributions at spark plasma sintering of inhomogeneous samples
    
    Zhurnal Tekhnicheskoi Fiziki, 86:1 (2016),  70–77
12. Mechanical properties of (Bi, Sb)$_{2}$Te$_{3}$ solid solutions obtained by directional crystallization and spark plasma sintering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:2 (2016),  96–103
13. On fabrication of functionally graded thermoelectric materials by spark plasma sintering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:21 (2014),  79–87
14. Influence of grain size distribution on the lattice thermal conductivity of Bi$_2$Te$_3$–Sb$_2$Te$_3$-based nanostructured materials
    
    Fizika Tverdogo Tela, 55:12 (2013),  2323–2330
15. Investigation of the possibilities for increasing the thermoelectric figure of merit of nanostructured materials based on Bi$_2$Te$_3$–Sb$_2$Te$_3$ solid solutions
    
    Fizika Tverdogo Tela, 54:11 (2012),  2036–2042
16. Energy filtration of charge carriers in a nanostructured material based on bismuth telluride
    
    Fizika Tverdogo Tela, 53:1 (2011),  29–34
17. Глубокие центры в монокристаллах GaAs, выращенных методом Чохральского с добавлением кислорода
    
    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  507–511
18. Влияние отклонения состава от стехиометрии на электрофизические свойства ядерно легированного арсенида галлия
    
    Fizika i Tekhnika Poluprovodnikov, 24:1 (1990),  187–189
19. FORMATION OF DISLOCATION-INDUCED HETEROGENEITY OF COMPOSITION OF GALLIUM-ARSENIDE CRYSTALS
    
    Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989),  106–110
20. Влияние легирования индием на люминесценцию монокристаллов арсенида галлия
    
    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1259–1262
21. Легирование арсенида галлия облучением нейтронами при высоких температурах
    
    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1025–1030
22. Поведение глубоких центров в ядерно легированном арсениде галлия
    
    Fizika i Tekhnika Poluprovodnikov, 22:3 (1988),  507–509
23. Влияние дислокаций на распределение глубоких центров в полуизолирующем GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 22:1 (1988),  44–48
24. On the Behaviour of Vanadium in Gallium Arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 21:11 (1987),  2024–2027
25. Electric Properties of Indium Arsenide Irradiated by Fast Neutrons
    
    Fizika i Tekhnika Poluprovodnikov, 21:3 (1987),  521–524
26. Properties of Nucleus-Doped Indium Arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 20:5 (1986),  822–827
27. On the Role of Dislocations in Formation of the Properties of Semi-Insulating GaAs Single Crystals
    
    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  634–640
28. Properties of Gallium Arsenide Doped with Ge and Se by the Irradiation in a Nuclear-Reactor Thermal Column
    
    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1558–1565
29. Study of the Annealing Process of Nuclear-Doped Gallium Arsenide by the Photoluminescent Method
    
    Fizika i Tekhnika Poluprovodnikov, 19:7 (1985),  1211–1216
30. Determination of Recombination Activity and Depth of Occurence of Point Defects in Semiconductor Crystals by the Method of Induced Current in a Scanning Electron Microscope
    
    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  38–43
31. Изменение электрофизических свойств ядерно-легированного арсенида галлия при отжиге
    
    Fizika i Tekhnika Poluprovodnikov, 18:12 (1984),  2187–2192
32. The formation of dislocations in perfect single crystals under the effect of stresses
    
    Dokl. Akad. Nauk SSSR, 207:5 (1972),  1109–1111
33. Effect of impurities on overcoming of high Peierls barriers by dislocations
    
    Dokl. Akad. Nauk SSSR, 189:3 (1969),  513–515
34. The plastic deformation anisotropy of single $\mathrm{GaAs}$ crystals, as influenced by alloying additives
    
    Dokl. Akad. Nauk SSSR, 184:5 (1969),  1084–1087


35. Памяти Сергея Петровича Соловьева к 80-летию со дня рождения (1932–2000)
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1374–1375