Skorokhodov Evgenii Vladimirovich

Publications in Math-Net.Ru

1. Fabrication of dielectric resonators on the light-emitting GeSi heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:1 (2025),  128–135
2. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
3. Theoretical and experimental studies of micromagnets for a silicon quantum processor
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1071–1078
4. Electron lithography of non-simply patterned magnetic mesoparticles
   
   Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1036–1043
5. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
6. Gyrotropic oscillations of magnetic vortices in two interacting ferromagnetic disks
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 117:2 (2023),  165–170
7. Eddy-current tunnel magnetic contacts with a composite free layer
   
   Zhurnal Tekhnicheskoi Fiziki, 93:11 (2023),  1616–1621
8. Magnetic field visualization in scanning electron microscope
   
   Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  1014–1018
9. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
10. Ferromagnetic resonance in exchange-coupled magnetic vortices
    
    Fizika Tverdogo Tela, 64:9 (2022),  1333–1337
11. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
12. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
13. Investigation of the parameters of superconducting and insulating elements of structures obtained on YBCO films by master mask with decreasing their size
    
    Fizika Tverdogo Tela, 63:9 (2021),  1218–1222
14. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
15. On a possibility to fabricate YBCO bridges with the perfect surface, critical temperature over 88 K and critical current density up to 5 $\times$ 10$^6$ a/cm$^2$
    
    Fizika Tverdogo Tela, 62:9 (2020),  1398–1402
16. Modeling of forced oscillations of magnetization in a system of three ferromagnetic nanodisks
    
    Fizika Tverdogo Tela, 62:9 (2020),  1349–1353
17. Morphology and structure of defected niobium oxide nonuniform arrays formed by anodizing bilayer Al/Nb systems
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1854–1859
18. Magnetic resonance force spectroscopy of magnetic vortex oscillations
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1821–1824
19. Features of the vapor-phase epitaxy of GaAs on nonplanar substrates
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  958–961
20. Magnetic force microscopy study of the effect of stresses on the magnetic state of Ni particles
    
    Fizika Tverdogo Tela, 61:9 (2019),  1623–1627
21. Simulation of the interaction of a magnetic resonance force microscope probe with a ferromagnetic sample
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1646–1649
22. Emission properties of heavily doped epitaxial indium-nitride layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
23. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
24. Vertical field-effect transistor with control $p$–$n$-junction based on GaAs
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1311–1314
25. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
26. Influence of the magnetic moment of the probe of a magnetic resonance force microscope on the spin-wave resonance spectra
    
    Fizika Tverdogo Tela, 60:11 (2018),  2213–2218
27. A study of the isolation region of planar superconducting YBCO structures formed by the master mask method
    
    Fizika Tverdogo Tela, 60:11 (2018),  2100–2104
28. Magnetic skyrmions in thickness-modulated films
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018),  378–382
29. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
30. Formation and properties of locally tensile strained Ge microstructures for silicon photonics
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1331–1336
31. Magnetic resonance force microscopy of a permalloy microstrip array
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:5 (2018),  49–56
32. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1599–1604
33. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
34. Domain wall pinning controlled by the magnetic field of four nanoparticles in a ferromagnetic nanowire
    
    Fizika Tverdogo Tela, 58:11 (2016),  2145–2148
35. Ferromagnetic resonance in interacting magnetic microstrips
    
    Fizika Tverdogo Tela, 58:11 (2016),  2135–2139
36. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
37. On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology
    
    Fizika i Tekhnika Poluprovodnikov, 50:8 (2016),  1133–1137
38. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
39. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
40. Growth and formation of the microstructure of YBCO films deposited by magnetron sputtering on fianite substrates
    
    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  68–72
41. Influence of the microcrystalline structure on the magnetic properties of ferromagnetic films and structures on their base
    
    Fizika Tverdogo Tela, 55:3 (2013),  435–439
42. Growing InN films by plasma-assisted metalorganic vapor-phase epitaxy on Al$_2$O$_3$ and YSZ substrates in plasma generated by gyrotron radiation under electron cyclotron resonance conditions
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  86–94