Osinnykh Igor Vasylievich

Publications in Math-Net.Ru

1. Stimulated emission in the heavily doped Al$_{0.68}$Ga$_{0.32}$N : Si structures with transverse optical pumping at room temperature
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1125–1131
2. Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  802–807
3. Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  677–684
4. Features of optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N:Si-structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  39–42
5. Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  48–51
6. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
7. Amplified luminescence of heavily doped Al_xGa_1-xN structures under optical pumping
   
   Kvantovaya Elektronika, 48:3 (2018),  215–221
8. Radiation enhancement in doped AlGaN-structures upon optical pumping
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  5–13
9. Decrease in the binding energy of donors in heavily doped GaN:Si layers
   
   Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1164–1168