Malin Timur Valerievich

Publications in Math-Net.Ru

1. Parameters of stimulated emission in Al$_{0.65}$Ga$_{0.35}$N : Si/AlN/Al$_2$O$_3$ structure with planar geometry
   
   Optics and Spectroscopy, 132:9 (2024),  911–917
2. Chemical kinetics of the Si(111) surface nitridation process at temperatures below the structural phase transition (7$\times$7)$\to$(1$\times$1)
   
   Fizika i Tekhnika Poluprovodnikov, 58:7 (2024),  349–357
3. Optical gain in heavily doped Al$_{0.65}$Ga$_{0.35}$N:Si structures under continuous pumping
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:21 (2024),  39–42
4. Mechanisms of optical gain in heavily doped Al$_x$Ga$_{1-x}$N : Si structures ($x$ = 0.56–1)
   
   Fizika i Tekhnika Poluprovodnikov, 57:9 (2023),  731–737
5. Stimulated emission in the heavily doped Al$_{0.68}$Ga$_{0.32}$N : Si structures with transverse optical pumping at room temperature
   
   Fizika i Tekhnika Poluprovodnikov, 56:12 (2022),  1125–1131
6. Determination of the types of optical transitions and concentrations of donors and acceptors in GaN by the dependence of photoluminescence intensity on the excitation power
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  802–807
7. Determination of the AlN nucleation layer thickness formed on the Al$_2$O$_3$ (0001) surface during nitridation process by XPS and IR spectroscopy
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  734–741
8. Transformation of N-polar inversion domains from AlN buffer layers during the growth of AlGaN layers
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  677–684
9. GaN quantum dots formation by temperature increase in ammonia flow
   
   Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  667–671
10. Features of optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N:Si-structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  39–42
11. Forming the GaN nanocrystals on the graphene-like $g$-AlN and $g$-Si$_{3}$N$_{3}$ surface
    
    Fizika Tverdogo Tela, 61:12 (2019),  2327–2332
12. Surface polaritons in silicon-doped aluminum and gallium nitride films
    
    Optics and Spectroscopy, 127:1 (2019),  42–45
13. Optical gain in heavily doped Al$_{x}$Ga$_{1-x}$N : Si structures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:18 (2019),  48–51
14. Undoped high-resistance GaN buffer layer for AlGaN/GaN high-electron-mobility transistors
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:15 (2019),  21–24
15. Formation of a graphene-like SiN layer on the surface Si(111)
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1407–1413
16. Effect of the sapphire-nitridation level and nucleation-layer enrichment with aluminum on the structural properties of AlN layers
    
    Fizika i Tekhnika Poluprovodnikov, 52:6 (2018),  643–650
17. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
18. Amplified luminescence of heavily doped Al_xGa_1-xN structures under optical pumping
    
    Kvantovaya Elektronika, 48:3 (2018),  215–221
19. AlN/GaN heterostructures for normally-off transistors
    
    Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  395–402
20. Radiation enhancement in doped AlGaN-structures upon optical pumping
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:1 (2017),  5–13
21. Normally off transistors based on in situ passivated AlN/GaN heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:14 (2016),  72–79
22. MBE-grown AlGaN/GaN heterostructures for UV photodetectors
    
    Zhurnal Tekhnicheskoi Fiziki, 85:4 (2015),  67–73
23. Increase in the diffusion length of minority carriers in Al$_x$Ga$_{1-x}$N ($x$ = 0–0.1) fabricated by ammonia molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1329–1334
24. Nitridation of an unreconstructed and reconstructed $(\sqrt{31}\times\sqrt{31})R\pm9^\circ$ (0001) sapphire surface in an ammonia flow
    
    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  925–931
25. Chromium mask for plasma-chemical etching of Al$_x$Ga$_{1-x}$N layers
    
    Zhurnal Tekhnicheskoi Fiziki, 84:9 (2014),  96–99
26. Decrease in the binding energy of donors in heavily doped GaN:Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1164–1168
27. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  36–47