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Tetelbaum David Isaakovich

Publications in Math-Net.Ru

  1. Anisotropic scattering effects in YBCO thin films

    Fizika Tverdogo Tela, 67:7 (2025),  1254–1261
  2. A criterion for determination of the upper critical fields $H_{c2}$ in YBCO thin films with different ion irradiation doses

    Fizika Tverdogo Tela, 65:6 (2023),  907–913
  3. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
  4. Ion-irradiation effect on electron transport in YBCO thin films

    Fizika Tverdogo Tela, 64:9 (2022),  1162–1168
  5. Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO

    Fizika Tverdogo Tela, 62:9 (2020),  1434–1439
  6. Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide

    Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020),  298–304
  7. Calculating silicon-amorphization doses under medium-energy light-ion irradiation

    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  771–777
  8. Impact of oxygen vacancies on the formation and structure of filaments in SiO$_2$-based memristors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:1 (2020),  24–27
  9. Phase diagrams of thin disordered films based on HTSC YBa$_{2}$Cu$_{3}$O$_{7-x}$ in external magnetic fields

    Fizika Tverdogo Tela, 61:9 (2019),  1573–1578
  10. Role of the solid–aqueous medium interface in transferring light-induced excitation of silicon

    Zhurnal Tekhnicheskoi Fiziki, 89:9 (2019),  1427–1433
  11. Diffusion and interaction of In and As implanted into SiO$_2$ films

    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1023–1029
  12. The effect of irradiation with Si$^{+}$ ions on the resistive switching of memristive structures based on yttria stabilized zirconia

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019),  3–6
  13. Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1436–1442
  14. Calculation of the influence of the ion current density and temperature on the accumulation kinetics of point defects under the irradiation of Si with light ions

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  967–972
  15. Effect of boron impurity on the light-emitting properties of dislocation structures formed in silicon by Si$^{+}$ ion implantation

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  702–707
  16. Formation of hexagonal 9$R$ silicon polytype by ion implantation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:16 (2017),  87–92
  17. Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$

    Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016),  107–111
  18. Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  274–278
  19. Si:Si LEDs with room-temperature dislocation-related luminescence

    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  241–244
  20. Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  17–24
  21. Formation of fluorine-containing defects and nanocrystals in SiO$_2$ upon implantation with fluorine, silicon, and germanium ions: Numerical simulation and photoluminescence spectroscopy

    Fizika Tverdogo Tela, 57:11 (2015),  2106–2111
  22. The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  81–89
  23. Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities

    Fizika Tverdogo Tela, 56:3 (2014),  607–610
  24. Effect of ion doping on the dislocation-related photoluminescence in Si$^+$-implanted silicon

    Fizika i Tekhnika Poluprovodnikov, 48:2 (2014),  212–216
  25. Annealing-induced evolution of the structural and morphological properties of a multilayer nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters

    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  44–48
  26. Influence of the ion synthesis and ion doping regimes on the effect of sensitization of erbium emission by silicon nanoclusters in silicon dioxide films

    Fizika Tverdogo Tela, 55:11 (2013),  2243–2249
  27. Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO$_2$

    Fizika i Tekhnika Poluprovodnikov, 47:4 (2013),  460–465
  28. Chemical and phase compositions of silicon oxide films with nanocrystals prepared by carbon ion implantation

    Fizika Tverdogo Tela, 54:2 (2012),  370–377
  29. Peculiarities of the formation and properties of light-emitting structures based on ion-synthesized silicon nanocrystals in SiO$_2$ and matrices

    Fizika Tverdogo Tela, 54:2 (2012),  347–359
  30. Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix

    Zhurnal Tekhnicheskoi Fiziki, 82:12 (2012),  63–66
  31. Long-range effect of the irradiation of silicon with light on the Schottky-barrier photovoltage

    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  641–643
  32. Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities

    Fizika Tverdogo Tela, 53:12 (2011),  2294–2298
  33. Photoluminescence in silicon implanted with silicon ions at amorphizing doses

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1182–1187
  34. Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO$_x$/ZrO$_2$ system containing Si nanoclusters

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  747–753
  35. Formation and “white” photoluminescence of nanoclusters in SiO$_x$ films implanted with carbon ions

    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1498–1503
  36. On the anomalous dose dependence of $VV$-center concentration in silicon under nitrogen ion implantation

    Fizika i Tekhnika Poluprovodnikov, 26:8 (1992),  1514–1516
  37. On the mechanism of property modification in metals with strong structural imperfections at low ion irradiation doses

    Dokl. Akad. Nauk SSSR, 311:3 (1990),  606–608
  38. Немонотонный характер дозовой зависимости электрических свойств и химической стойкости азотированного ионной имплантацией кремния

    Fizika i Tekhnika Poluprovodnikov, 23:12 (1989),  2149–2152
  39. INFLUENCE OF EXTENDED DEFECTS IN ORIGINAL CRYSTALS ON THE REMOTE-CONTROL EFFECT UNDER IONIC IMPLANTATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:22 (1989),  44–47
  40. INTENSIFICATION OF ELASTIC-WAVES GENERATED BY ION BOMBARDING DURING DISTRIBUTION IN CRYSTALS WITH CLUSTER DEFECTS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  273–276
  41. On the Effect of Elastic Stresses on the Transformation of Defect Accumulations in Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 21:8 (1987),  1495–1497
  42. Effect of Long-Distant Action under Ionic Irradiation of «Oxygenless» Silicon

    Fizika i Tekhnika Poluprovodnikov, 21:5 (1987),  904–910
  43. Effect of Elastic Waves Arising under Ionic Bombardment on Structure Perfection of Semiconductor Crystals

    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  503–507
  44. Pressure effect on recrystallization rate of amorphous silicon layer at postimplantation annealing

    Fizika Tverdogo Tela, 27:1 (1985),  274–277
  45. Defect Formation in Silicon under Ion Bombardment beyond the Limits of Ion-Parth Range

    Fizika i Tekhnika Poluprovodnikov, 19:3 (1985),  464–468
  46. Связь аморфизуемости алмазоподобных полупроводников с их механическими свойствами

    Fizika i Tekhnika Poluprovodnikov, 17:6 (1983),  1045–1048
  47. Глубокое проникновение радиационных дефектов из ионно-имплантированного слоя в объем полупроводника

    Fizika i Tekhnika Poluprovodnikov, 17:5 (1983),  838–842
  48. The short-range order in $\mathrm{InSb}$, arriorphized by the ion bombardment

    Dokl. Akad. Nauk SSSR, 248:6 (1979),  1335–1337
  49. Structural transformations during the bombardment of iron, nickel, and molybdenum with $\mathrm{Ar}^+$, $\mathrm{N}^+$ and $\mathrm{C}^+$ ions

    Dokl. Akad. Nauk SSSR, 217:2 (1974),  330–332
  50. Relationship between the amorphization and the point defect formation during ionic bombardment of germanium and silicon

    Dokl. Akad. Nauk SSSR, 192:2 (1970),  324–326
  51. Structure of amorphous germanium obtained from crystalline germanium by bombardment with argon ions

    Dokl. Akad. Nauk SSSR, 175:4 (1967),  823–825

© Steklov Math. Inst. of RAS, 2026