Gudovskikh Aleksandr Sergeevich

Publications in Math-Net.Ru

1. Оптические и фотоэлектрические свойства многослойных структур GaN|InP, сформированных методом плазмохимического атомно-слоевого осаждения
   
   Fizika Tverdogo Tela, 67:12 (2025),  2390–2393
2. Study of the influence of spin-coating parameters and PEDOT:PSS suspension composition on the performance of $b$-Si/PEDOT:PSS solar cells
   
   Fizika i Tekhnika Poluprovodnikov, 59:5 (2025),  286–290
3. Capacitance studies of solar cells based on nanostructured “black” silicon with a passivating $n$-GaP layer
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  223–226
4. Studies of structural and electronic properties of InP layers formed by plasma-enhanced atomic layer deposition on a Si substrate with a GaP sublayer
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:9 (2025),  18–22
5. Surface-enhanced Raman spectroscopy on “black silicon” substrates
   
   Fizika Tverdogo Tela, 66:12 (2024),  2152–2154
6. Hybrid solar cells based on PEDOT:PSS/Si heterojunction obtained by spin coating on silicon fiber array
   
   Fizika i Tekhnika Poluprovodnikov, 58:10 (2024),  569–572
7. Properties of AlP/Si heterostructure fabricated by combination of plasma enhanced and atomic layer deposition
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:16 (2024),  3–6
8. Study of the influence of electron beam irradiation on the photoelectric and electrophysical properties of silicon HJT solar cells
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:2 (2024),  23–27
9. Development of technology for plasma-enhanced chemical vapor deposition of boron phosphide at low temperatures
   
   Fizika Tverdogo Tela, 65:12 (2023),  2198–2200
10. Study of the possibility to increase annual electricity production using silicon solar cells with a nanostructured surface
    
    Fizika i Tekhnika Poluprovodnikov, 57:7 (2023),  522–525
11. Plasma enhanced atomic layer deposition of InP layers and multilayer InP/GaP structures on Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  406–413
12. The influence of chemical pretreatment on the passivation efficiency of textured silicon wafers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  62–64
13. Simulation of the PEDOT:PSS/Si heterostructure for flexible hybrid solar cells
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:23 (2023),  52–55
14. Study of InP/GaP quantum wells grown by vapor phase epitaxy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:6 (2023),  16–20
15. Resonant hybrid metalвђ“dielectric nanostructures for local color generation
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 115:4 (2022),  213–217
16. Study of active regions based on multiperiod GaAsN/InAs superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
17. Impact of silicon wafer surface treatment on the morphology of GaP layers produced by plasma enhanced atomic layer deposition
    
    Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  213–220
18. Study of the influence of design features of a magnetron sputtering chamber on the electrical and optical properties of indium-tin oxide films
    
    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  360–364
19. Influence of the conditions for the formation of In$_{2}$O$_{3}$–SnO$_{2}$ films by magnetron sputtering on the charge carriers lifetime in silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:24 (2021),  31–33
20. Study of Schottky diodes based on an array of silicon wires obtained by cryogenic dry etching
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021),  47–50
21. Admittance spectroscopy of solar cells based on selective contact MoO$_{x}$/Si junction
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:16 (2021),  24–27
22. Formation of heterostructures of GaP/Si photoconverters by the combined method of MOVPE and PEALD
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:14 (2021),  51–54
23. A selective BP/Si contact formed by low-temperature plasma-enhanced atomic layer deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:2 (2021),  49–51
24. Using MoO$_{x}$/$p$-Si selective contact for evaluation of the degradation of a near-surface region of silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020),  37–40
25. Effect of thermal annealing on the photovoltaic properties of GaP/Si heterostructures fabricated by plasma-enhanced atomic layer deposition
    
    Fizika i Tekhnika Poluprovodnikov, 53:8 (2019),  1095–1102
26. Visualization of isofrequency contours of strongly localized waveguide modes in planar dielectric structures
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 107:1 (2018),  12–17
27. Precision chemical etching of GaP(NAs) epitaxial layers for the formation of monolithic optoelectronic devices
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1668–1674
28. Formation of Cu$_{2}$O and ZnO crystal layers by magnetron assisted sputtering and their optical characterization
    
    Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  402–408
29. Nanoscale Cu$_2$O films: Radio-frequency magnetron sputtering and structural and optical studies
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  111–115
30. Influence of double- and triple-layer antireflection coatings on the formation of photocurrents in multijunction III–V solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  89–93
31. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1543–1547
32. GaAs/InGaAsN heterostructures for multi-junction solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  663–667
33. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1448–1452
34. MBE growth of GaP on a Si substrate
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  569–572
35. Admittance spectroscopy of solar cells based on GaPNAs layers
    
    Fizika i Tekhnika Poluprovodnikov, 49:4 (2015),  534–538
36. Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015),  15–23
37. Study of GaInP solar-cell interfaces by variable-flux spectral measurements
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  475–480
38. Design of multijunction GaPNAs/Si heterostructure solar cells by computer simulation
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  396–401
39. Analysis of light-induced degradation mechanisms in $\alpha$-Si:H/$\mu$-Si:H solar photovoltaics
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1264–1269
40. Study of the properties of solar cells based on $a$-Si : H-$p$–$i$–$n$ structures by admittance spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1094–1101
41. Study of the light-induced degradation of tandem $\alpha$-Si : H/$\mu c$-Si : H photovoltaic converters
    
    Fizika i Tekhnika Poluprovodnikov, 47:5 (2013),  667–674
42. Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  88–94
43. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1568–1576