Domashevskaya Èvelina Pavlovna

Publications in Math-Net.Ru

1. Structural and gas-sensitive characteristics of thin semiconductor PdO films of various thicknesses during ozone detection
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1034–1039
2. The influence of relative content of a metal component in a dielectric matrix on the formation and dimensions of cobalt nanocrystallites in Co$_{x}$(MgF$_{2}$)$_{100-x}$ film composites
   
   Fizika Tverdogo Tela, 61:2 (2019),  211–219
3. On the morphology and optical properties of molybdenum disulfide nanostructures from a monomolecular layer to a fractal-like substructure
   
   Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  940–946
4. Phase formation and electronic structure peculiarities in the Al$_{1-x}$Si$_{x}$ film composites under the conditions of magnetron and ion-beam sputtering
   
   Fizika Tverdogo Tela, 60:5 (2018),  1005–1011
5. Photoluminescence properties of nanoporous nanocrystalline carbonate-substituted hydroxyapatite
   
   Optics and Spectroscopy, 124:2 (2018),  191–196
6. Composition of nanocomposites of thin tin layers on porous silicon, formed by magnetron sputtering
   
   Fizika Tverdogo Tela, 59:4 (2017),  773–782
7. Specific features of the atomic structure of metallic layers of multilayered (CoFeZr/SiO$_{2}$)$_{32}$ and (CoFeZr/$a$-Si)$_{40}$ nanostructures with different interlayers
   
   Fizika Tverdogo Tela, 59:2 (2017),  373–378
8. Electronic structure and phase composition of dielectric interlayers in multilayer amorphous nanostructure [(CoFeB)$_{60}$C$_{40}$/SiO$_{2}$]$_{200}$
   
   Fizika Tverdogo Tela, 59:1 (2017),  161–166
9. Formation of silicon nanocrystals in multilayer nanoperiodic $a$-SiO$_{x}$/insulator structures from the results of synchrotron investigations
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  363–366
10. Ab initio calculation and synchrotron X-ray spectroscopy investigations of tin oxides near the Sn $L_{3}$
    
    Fizika Tverdogo Tela, 58:12 (2016),  2294–2298
11. Interatomic interactions at interfaces of multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/Si$_{2}$)$_{32}$
    
    Fizika Tverdogo Tela, 58:5 (2016),  991–999
12. Deep centers at the interface in In$_{2x}$Ga$_{2(1-x)}$Te$_{3}$/InAs and In$_{2}$Te$_{3}$/InAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  313–317
13. Composition and optical properties of amorphous $a$-SiO$_x$ :H films with silicon nanoclusters
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  212–217
14. On the electrical and optical properties of oxide nanolayers produced by the thermal oxidation of metal tin
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  180–184
15. XANES and XPS investigations of surface defects in wire-like SnO$_2$ crystals
    
    Fizika Tverdogo Tela, 57:1 (2015),  145–152
16. Variations of the optical characteristics of nano-, meso-, and macroporous silicon with time
    
    Zhurnal Tekhnicheskoi Fiziki, 85:7 (2015),  151–155
17. Formation of Si nanocrystals in multilayered nanoperiodic Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) structures: Synchrotron and photoluminescence data
    
    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  421–425
18. Peculiarities of the electronic structure and phase composition of amorphous (SiO$_2$)$_x$($a$-Si:H)$_{x-1}$ composite films according to X-ray spectroscopy data
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  82–88
19. Atomic and electronic structure peculiarities of silicon wires formed on substrates with varied resistivity according to ultrasoft X-ray emission spectroscopy
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:7 (2015),  81–88
20. X-Ray photoelectron spectroscopy investigations of atomic interactions in surface layers of multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/SiO$_2$)$_{32}$
    
    Fizika Tverdogo Tela, 56:11 (2014),  2219–2230
21. Theoretical and experimental study of the electronic structure of tin dioxide
    
    Fizika Tverdogo Tela, 56:9 (2014),  1690–1695
22. Optical characteristics of porous silicon structures
    
    Zhurnal Tekhnicheskoi Fiziki, 84:2 (2014),  70–75
23. Specific features of the sol–gel formation and optical properties of 3$d$ metal/porous silicon composites
    
    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  570–575
24. XANES investigations of interatomic interactions in multilayered nanostructures (Co$_{45}$Fe$_{45}$Zr$_{10}$/$a$-Si)$_{40}$ and (Co$_{45}$Fe$_{45}$Zr$_{10}$/SiO$_2$)$_{32}$
    
    Fizika Tverdogo Tela, 55:6 (2013),  1202–1210
25. Synchrotron investigations of Si/Mo/Si $\dots$ $c$-Si (100) multilayer nanoperiodic structures
    
    Fizika Tverdogo Tela, 55:3 (2013),  577–584
26. Structural and optical properties of porous silicon prepared from a $p^+$-epitaxial layer on $n$-Si(111)
    
    Zhurnal Tekhnicheskoi Fiziki, 83:3 (2013),  96–100
27. Optical properties of porous silicon processed in tetraethyl orthosilicate
    
    Zhurnal Tekhnicheskoi Fiziki, 83:2 (2013),  136–140
28. Synchrotron study of the formation of nanoclusters in Al$_2$O$_3$/SiO$_x$/Al$_2$O$_3$/SiO$_x$/$\dots$/Si(100) multilayer nanostructures
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1327–1334
29. Properties of epitaxial (Al$_x$Ga$_{1-x}$As)$_{1-y}$C$_y$ alloys grown by MOCVD autoepitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  9–14
30. Superstructured ordering in Al$_x$Ga$_{1-x}$As and Ga$_x$In$_{1-x}$P alloys
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  3–8
31. Influence of natural aging on photoluminescence from porous silicon
    
    Zhurnal Tekhnicheskoi Fiziki, 82:2 (2012),  150–152
32. Study of the morphological growth features and optical characteristics of multilayer porous silicon samples grown on $n$-type substrates with an epitaxially deposited $p^+$-layer
    
    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1101–1107
33. Structural and spectral features of MOCVD Al$_x$Ga$_y$In$_{1-x-y}$As$_z$P$_{1-z}$/GaAs (100) alloys
    
    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  739–750
34. Spinodal decomposition of Ga$_x$In$_{1-x}$As$_y$P$_{1-y}$ quaternary alloys
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1489–1497
35. Effect of silicon on relaxation of the crystal lattice in MOCVD–hydride Al$_x$Ga$_{1-x}$As (100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  488–499
36. Effect of natural aging on photoluminescence of porous silicon
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:17 (2011),  1–8
37. Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1140–1146
38. The substructure and luminescence of low-temperature AlGaAs/GaAs(100) heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  194–199
39. Morphology of tin oxide nanocrystals grown by vapor-phase transport method
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:12 (2010),  1–7
40. Ultrasoft X-ray spectroscopic study of the localized $\mathrm{D}$-state energy spectrum in the bulk and on the surface of $a$-$\mathrm{Si}:\mathrm{H}$
    
    Fizika Tverdogo Tela, 33:10 (1991),  3033–3038
41. Плотность состояний хвоста валентной зоны и фотопроводимость аморфного гидрированного кремния
    
    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1448–1450
42. Влияние стехиометрических вакансий на поведение потолка валентной зоны в твердых растворах (In$_{2}$Te$_{3}$)$_{x}{-}$(HgTe)$_{1-x}$
    
    Fizika i Tekhnika Poluprovodnikov, 25:5 (1991),  893–897
43. Структурная сетка, уровень Ферми и плотность состояний аморфного кремния
    
    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  450–455
44. Электронное строение валентной зоны твердых растворов Al$_{y}$Ga$_{1-y}$As и GaAs$_{1-x}$P$_{x}$ по данным рентгеновской спектроскопии
    
    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  268–273
45. Electron state density of $\mathrm{MB}_{66}$ compounds
    
    Fizika Tverdogo Tela, 30:3 (1988),  899–901
46. DENSITY CONTROL OF THE EFFICIENT SURFACE-CHARGE IN THE MDS STRUCTURE WITH A TUNGSTEN TRIOXIDE FILM
    
    Zhurnal Tekhnicheskoi Fiziki, 57:10 (1987),  1957–1961
47. Local electronic states of the iodine center in $\mathrm{AgCl}$
    
    Fizika Tverdogo Tela, 28:7 (1986),  2191–2193
48. Effect of $5d$-Electrons of Mercury on the Collapse of the Forbidden Band in Cd$_{x}$Hg$_{1-x}$Te Solid Solutions
    
    Fizika i Tekhnika Poluprovodnikov, 20:9 (1986),  1658–1661
49. Valence band structure of $\mathrm{SmB}_{6}$ compound with intermediate valence
    
    Fizika Tverdogo Tela, 27:7 (1985),  2173–2175
50. Self-consistent relativistic band structure of $\mathrm{TmS}$ in local density functional approximation
    
    Fizika Tverdogo Tela, 26:2 (1984),  554–556
51. Плотность состояний и фотопроводимость аморфного кремния
    
    Fizika i Tekhnika Poluprovodnikov, 18:10 (1984),  1897–1899
52. Electronic structure of copper chalcogenides using X-ray spectral and X-ray photoelectron data
    
    Fizika Tverdogo Tela, 25:8 (1983),  2482–2484
53. On the nature of the chemical bond in semiconducting $\mathrm{A}^{\mathrm{III}}\mathrm{B}^{\mathrm{V}}$ compounds
    
    Dokl. Akad. Nauk SSSR, 156:2 (1964),  430–433


54. Photoluminescence properties of heavily doped heterostructures based on (Al$_x$Ga$_{1-x}$As)$_{1-y}$Si$_y$ solid solutions
    
    Fizika Tverdogo Tela, 55:10 (2013),  2054–2057