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Rud' Yurii Vasil'evich

Publications in Math-Net.Ru

  1. $p$-GaSb(Ox)/$n$-GaSb native-oxide heterojunctions: Non-vacuum process and photoelectric properties

    Fizika i Tekhnika Poluprovodnikov, 48:4 (2014),  471–474
  2. Creation and photoelectric properties of Ox/$p$-InAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1293–1296
  3. Photosensitive Ox/GaAs heterojunctions: Creation and properties

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  802–804
  4. Creation and studies of the photosensitivity of Ox/$n$-GaP structures

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  798–801
  5. Photosensitivity of ZnO/CdS/Cu(In,Ga)Se$_2$/Mo thin-film solar cells fabricated on various substrates

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  231–234
  6. Magnetic and thermal properties of CuFeS$_2$ at low temperatures

    Fizika Tverdogo Tela, 53:1 (2011),  70–74
  7. Photosensitive thin-film In/$p$-Pb$_x$Sn$_{1-x}$S Schottky barriers: Fabrication and properties

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1084–1089
  8. Quaternary (FeIn$_2$S$_4$)$_x$(MnIn$_2$S$_4$)$_{1-x}$ alloys and photosensitive structures on their basis

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  941–946
  9. Photosensitive structures based on CuIn$_5$Te$_8$ single crystals: Development and properties

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  617–621
  10. Surface-barrier structures on single crystals of CdMgMnTe quaternary solid solutions: Creation and properties

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  468–473
  11. Growth of tetragonal CdP$_2$ single crystals and the properties of barriers on their basis

    Zhurnal Tekhnicheskoi Fiziki, 80:4 (2010),  84–88
  12. Development and photoelectric properties of In/$p$-Ag$_3$AsS$_3$ surface-barrier structures

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1059–1063
  13. Polydisalicylidene azomethyne/Si(GaAs) heterojunctions: Development and properties

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  372–376
  14. Photosensitivity of $n$-CdS/$p$-CdTe heterojunctions obtained by chemical surface deposition of CdS

    Fizika i Tekhnika Poluprovodnikov, 44:3 (2010),  335–337
  15. Discovery of the (In$_2$S$_3$)$_x$(MnIn$_2$S$_4$)$_{1-x}$ solid solutions and fabrication of photosensitive structures based on them

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  48–52
  16. Growth of the (In$_2$S$_3$)$_x$(FeIn$_2$S$_4$)$_{1-x}$ single crystals and properties of photoelectric structures on their basis

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  39–43
  17. Study of the solid solutions in the $\mathrm{CdTe}$–$\mathrm{MnTe}$–$\mathrm{MgTe}$ system

    Fizika Tverdogo Tela, 34:7 (1992),  2284–2286
  18. Photoelectric properties of In${-}p$-CuInSe$_{2}$ Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1996–2000
  19. Polarization photosensivity of $p$-CuInSe$_{2}{-}n$-CdS thin-film structures

    Fizika i Tekhnika Poluprovodnikov, 26:11 (1992),  1861–1865
  20. Optical heterocontacts based on $n$-CuInSe$_{2}$ films

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  558–562
  21. Production and properties of isotype heterostructures based on $n$-CuInSe$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  556–558
  22. Intensification of photopleochroism in $n{-}p$-CdSiAs$_{2}{-}n$-In$_{2}$O$_{3}$ structures

    Fizika i Tekhnika Poluprovodnikov, 26:3 (1992),  506–509
  23. Фотоактивное поглощение в тонких пленках CuInSe$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 25:11 (1991),  2047–2050
  24. Компенсация фотоплеохроизма поляриметрических структур на основе CdGeP$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1469–1471
  25. PHOTOELECTRIC PROPERTIES OF CDGEP2 STRUCTURES AND ITS INP BINARY ANALOG

    Zhurnal Tekhnicheskoi Fiziki, 60:9 (1990),  174–176
  26. Анизотропия переноса носителей заряда в монокристаллах CdGeAs$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 24:12 (1990),  2181–2185
  27. Анизотропия краевого оптического поглощения компенсированных кристаллов $n$-CdGeP$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1306–1312
  28. DETECTION OF ANISOTROPY OF HOLE MOBILITY IN CDSIAS2 CRYSTALS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:21 (1990),  9–12
  29. Optical dichroism of $\mathrm{CdSnP}_{2}$ near the fundamental absorption edge

    Fizika Tverdogo Tela, 31:4 (1989),  108–113
  30. PHOTOELECTROCHEMICAL NUCLEI FROM GLASS-LIKE SEMICONDUCTORS II-IV-V2

    Zhurnal Tekhnicheskoi Fiziki, 59:7 (1989),  112–116
  31. ELECTRICAL AND PHOTOELECTRICAL PROPERTIES IN N-P-CDSIAS2

    Zhurnal Tekhnicheskoi Fiziki, 59:6 (1989),  128–131
  32. INVERSION OF THE PHOTOFLOW SIGN IN POLARIMETRIC STRUCTURES FROM CDSIAS2 AND CDGEP2

    Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989),  101–105
  33. Оптические свойства монокристаллов AgGaTe$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 23:10 (1989),  1778–1783
  34. Анизотропия длинноволнового оптического поглощения монокристаллов CuInTe$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 23:7 (1989),  1299–1301
  35. Спектры фоточувствительности структур Cu$-$CdSiP$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 23:6 (1989),  1002–1005
  36. Фотоэффект в гетероструктурах In$_{2}$O$_{3}$/CuInSe$_{2}$, полученных методом термического окисления

    Fizika i Tekhnika Poluprovodnikov, 23:5 (1989),  869–872
  37. Поляризационная фоточувствительность барьеров электролит$-$CdGeP$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 23:2 (1989),  312–315
  38. Fundamental optical absorption edge in $\mathrm{CdSiAs}_{2}$

    Fizika Tverdogo Tela, 30:12 (1988),  3584–3590
  39. REFLECTION AND ELLIPSOMETRY OF REAL SURFACE OF CUINS2 CRYSTALS

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1612–1614
  40. PHOTOVOLTAIC EFFECT IN THE P-ZNSNAS2-BASED HETEROTRANSITION

    Zhurnal Tekhnicheskoi Fiziki, 58:8 (1988),  1586–1588
  41. PHOTOVOLTAIC EFFECT IN PARA-CDO-CDGEP2 BARRIERS

    Zhurnal Tekhnicheskoi Fiziki, 58:7 (1988),  1415–1419
  42. Спектры фоточувствительности контакта I$-$III$-$VI$_{2}{-}$электролит

    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1699–1701
  43. Фазовый переход халькопирит${}\rightleftarrows{}$ сфалерит в полупроводниках II$-$IV$-$V$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1580–1584
  44. Поляризационная фоточувствительность анизотипных структур $n$-SiO$_{2}{-}p$-CdGeP$_{2}\langle\text{Ga}\rangle$

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1115–1116
  45. Дихроизм кристаллов MnIn$_{2}$Te$_{4}$ и фотоплеохроизм структур на их основе

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1101–1104
  46. DETECTION OF OPTICAL LINEAR DICHROISM IN CUINTE2 MONOCRYSTALS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:10 (1988),  917–920
  47. MULTIFREQUENCY GIGANTIC PHOTOPLEOCHROISM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:10 (1988),  900–903
  48. Low temperature electronic properties of $\mathrm{CuFeS}_{2}$ and its band diagram at the $\Gamma$ point

    Fizika Tverdogo Tela, 29:7 (1987),  2209–2212
  49. Luminescence kinetics in some $\mathrm{A}_{2}\mathrm{B}_{6}$ solid solutions

    Fizika Tverdogo Tela, 29:6 (1987),  1685–1689
  50. Interatomic interaction dynamics and the mechanism of phase transition and of intrinsic point defect formation in $\mathrm{ZnSnAs}_{2}$ semiconductor

    Fizika Tverdogo Tela, 29:2 (1987),  632–634
  51. POLARIMETRIC HETEROPHOTOELEMENT-MNIN2TE4-SI

    Zhurnal Tekhnicheskoi Fiziki, 57:12 (1987),  2403–2404
  52. Physical Properties of MnIn$_{2}$Te$_{4}$ Films and Heterojunctions on Their Base

    Fizika i Tekhnika Poluprovodnikov, 21:10 (1987),  1916–1918
  53. Schottky Diodes on MnIn$_{2}$Te and MnGa$_{2}$Te$_{4}$ Magnetic Semiconductors

    Fizika i Tekhnika Poluprovodnikov, 21:6 (1987),  1051–1053
  54. Photosensitivity of the Semiconductors II$-$IV$-$V$_{2}{-}$ Electrolyte Systems

    Fizika i Tekhnika Poluprovodnikov, 21:4 (1987),  615–619
  55. Experimental detection of anisotropy of optical-absorption in $Mn\,In_2\,Te_4$ and $Mn\,Ga_2\,Te_4$ crystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:17 (1987),  1040–1043
  56. PHOTOELECTRIC PROPERTIES OF THE PARA-SNO2-PARA-CDGEP2(IN) ISO-TYPE HETEROJUNCTION

    Zhurnal Tekhnicheskoi Fiziki, 56:10 (1986),  1989–1993
  57. Photoluminescence of $n$-CdSnAs$_{2}$ Single Crystals

    Fizika i Tekhnika Poluprovodnikov, 20:8 (1986),  1533–1535
  58. Effect of Deviation from Stoichiometry on the Luminescence of CdSiAs$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 19:9 (1985),  1718–1720
  59. DISCOVERY OF 100-PERCENT DEGREE LINEAR-POLARIZATION OF PHOTOLUMINESCENCE OF ANISOTROPIC SEMICONDUCTORS

    Zhurnal Tekhnicheskoi Fiziki, 54:11 (1984),  2253–2255
  60. A-II-B-IV-C2-V IN2O3-COMPOUND HETEROELEMENTS

    Zhurnal Tekhnicheskoi Fiziki, 53:2 (1983),  325–328
  61. Поляризация примесной фотолюминесценции кристаллов CdSiAs$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 17:12 (1983),  2208–2211
  62. Электрическте свойства твердых растворов A$^{\text{III}}$B$^{\text{V}}{-}$A$^{\text{II}}$B$^{\text{IV}}$C$^{\text{V}}_{2}$, облученных ионами H$^{+}$

    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1347–1348
  63. Гетеропереходы твердофазного замещения $p$-Zn$_{x}$Cd$_{1-x}$SnAs$_{2}{-}n$-CdSnAs$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 17:7 (1983),  1265–1269
  64. Фотопроводимость и определение фундаментальных параметров одноосных кристаллов (на примере CdGeP$_{2}\langle\text{Cu}\rangle$)

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  426–430
  65. Фотолюминесценция кристаллов ромбической модификации AgInS$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  341–344
  66. Поляризация люминесценции монокристаллов AgInS$_{2}$

    Fizika i Tekhnika Poluprovodnikov, 17:2 (1983),  281–287
  67. Transfer phenomena in solid and liquid $\mathrm{ZnGeP}_2$

    Dokl. Akad. Nauk SSSR, 216:2 (1974),  303–305
  68. Electrical properties and photoconductivity of $\mathrm{ZnSiAs}_2$ crystals of $n$-type

    Dokl. Akad. Nauk SSSR, 216:1 (1974),  56–58
  69. A new field of application for some semiconductor compounds

    Dokl. Akad. Nauk SSSR, 189:2 (1969),  297–298
  70. Energy structure of zones in certain $\mathrm{A}^{\mathrm{II}}\mathrm{B}^{\mathrm{IV}}\mathrm{C}_2^{\mathrm{V}}$ crystals

    Dokl. Akad. Nauk SSSR, 163:4 (1965),  868–869
  71. Photoelectric properties of $p$-$\mathrm{ZnSiAs}_2$ and $p$-$\mathrm{CdGeAs}_2$ crystals

    Dokl. Akad. Nauk SSSR, 161:5 (1965),  1065–1066
  72. New glasslike compounds

    Dokl. Akad. Nauk SSSR, 160:3 (1965),  633–634
  73. An investigation of $\mathrm{ZnSiP}_2$, $\mathrm{CdSiP}_2$ and $\mathrm{ZnSiAs}_2$ crystals

    Dokl. Akad. Nauk SSSR, 154:5 (1964),  1116–1119

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