Danilov Aleksandr Igorevich

Publications in Math-Net.Ru

1. InGaAs/AlInAs/InP quantum-cascade lasers with reflective and antireflective optical coatings
   
   Kvantovaya Elektronika, 54:2 (2024),  100–103
2. Metal–dielectric mirror coatings for 4–5-μm quantum-cascade lasers
   
   Kvantovaya Elektronika, 53:8 (2023),  641–644
3. Dielectric highly reflective mirror coatings for quantum cascade lasers with 4 – 5 μm emission wavelength
   
   Kvantovaya Elektronika, 53:5 (2023),  370–373
4. 3.8 THz quantum cascade laser grown by metalorganic vapor phase epitaxy
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:10 (2022),  16–19
5. Semiconductor lasers with improved radiation characteristics
   
   Kvantovaya Elektronika, 52:12 (2022),  1079–1087
6. 3.3 THz quantum cascade laser based on a three GaAs/AlGaAs quantum-well active module with an operating temperature above 120 K
   
   Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  989–994
7. Triple integrated laser–thyristor
   
   Kvantovaya Elektronika, 50:11 (2020),  1001–1003
8. Quantum cascade laser with bound-to-quasi-continuum optical transitions at a temperature of up to 371 K
   
   Kvantovaya Elektronika, 50:8 (2020),  710–713
9. 1.5 – 1.6 μm semiconductor lasers with an asymmetric periodic optically coupled waveguide
   
   Kvantovaya Elektronika, 50:6 (2020),  600–602
10. Experimental studies of 1.5–1.6 μm high-power single-frequency semiconductor lasers
    
    Kvantovaya Elektronika, 50:2 (2020),  143–146
11. Double integrated laser-thyristor
    
    Kvantovaya Elektronika, 49:11 (2019),  1011–1013
12. Experimental studies of 1.5–1.6 μm high-power asymmetric-waveguide multimode lasers
    
    Kvantovaya Elektronika, 49:7 (2019),  649–652
13. Temperature dependences of the threshold current and output power of a quantum-cascade laser emitting at 3.3 THz
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1268–1273
14. Laser diode arrays based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 62%
    
    Kvantovaya Elektronika, 47:8 (2017),  693–695
15. Laser diode bars based on AlGaAs/GaAs quantum-well heterostructures with an efficiency up to 70%
    
    Kvantovaya Elektronika, 47:4 (2017),  291–293
16. Laser emitters ($\lambda$ = 808 nm) based on AlGaAs/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:1 (2014),  120–124