Castro Rene Arata

Publications in Math-Net.Ru

1. Особенности диэлектрических спектров пленок йодида серебра, легированных медью
   
   Fizika Tverdogo Tela, 67:12 (2025),  2399–2402
2. Change of the structure of dielectric spectra of vanadium dioxide films in case of chromium doping
   
   Fizika Tverdogo Tela, 67:4 (2025),  737–746
3. The role of silver ion doping in the transformation of the phase transition mechanism in vanadium dioxide films
   
   Fizika Tverdogo Tela, 67:2 (2025),  391–398
4. Broadband dielectric spectroscopy of human albumin solution at physiological temperatures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1224–1233
5. Dielectric spectroscopy of AgI films doped Cu
   
   Fizika Tverdogo Tela, 66:12 (2024),  2092–2094
6. Dielectric spectroscopy of doped sillenites crystals
   
   Fizika Tverdogo Tela, 66:8 (2024),  1330–1337
7. Features of the phase transition in thin films of AgI superionic semiconductor
   
   Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  624–627
8. Nanocomposites based on thermoplastic aromatic polyimides with cerium dioxide nanoparticles: dielectric spectroscopy
   
   Fizika Tverdogo Tela, 64:8 (2022),  1112–1121
9. Application of the method of dielectric spectroscopy to study the properties of blood serum of mice with malignant ascites
   
   Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  147–151
10. Dielectric measurements of nanocrystalline VO$_2$ : Fe films
    
    Optics and Spectroscopy, 130:10 (2022),  1491–1498
11. Dielectric study of blood serum of patients with oncohematological diseases
    
    Optics and Spectroscopy, 130:6 (2022),  918–923
12. Polarization processes in thin layers of glassy hybrid system Ge$_{28.5}$Pb$_{14.0}$Fe$_{1.0}$S$_{56.5}$
    
    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  559–565
13. Ellipsometric characterization of VO$_2$, VO$_2$ : Mg, VO$_2$ : Ge nanocrystalline films
    
    Fizika Tverdogo Tela, 63:12 (2021),  2210–2216
14. Impedancemetry of Ag$_2$S nanocrystallites embedded in nanoporous glasses
    
    Fizika Tverdogo Tela, 63:12 (2021),  2185–2191
15. Study of relaxers distribution in thin layers of amorphous MoTe$_{2}$
    
    Fizika Tverdogo Tela, 63:11 (2021),  1852–1855
16. Characteristic features of the charge transfer processes in the nanocomposites based on polyphenylene oxide with fullerene and endofullerene
    
    Fizika Tverdogo Tela, 63:10 (2021),  1706–1710
17. Thermal impedance spectroscopy of V$_{2}$O$_{5}$ nanocrystallites localized in the channels of nanoporous glass
    
    Fizika Tverdogo Tela, 63:9 (2021),  1429–1436
18. Polarization processes in thin layers of amorphous MoS$_2$ obtained by RF magnetron sputtering
    
    Fizika i Tekhnika Poluprovodnikov, 54:5 (2020),  461–465
19. Dielectric spectroscopy as a method for testing thin vanadium dioxide films
    
    Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019),  1885–1890
20. Charge transfer in gap structures based on the chalcogenide system (As$_{2}$Se$_{3}$)$_{100-x}$Bi$_{x}$
    
    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1664–1668
21. Dielectric spectroscopy of VO$_{2}$:Ge films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  44–46
22. Mechanism of optical charge exchange of magnetic centers in BSO:Fe
    
    Fizika Tverdogo Tela, 60:9 (2018),  1785–1792
23. Low-frequency dielectric relaxation in glassy system Ge$_{28.5}$Pb$_{15}$S$_{56.5}$ with iron impurity
    
    Meždunar. nauč.-issled. žurn., 2018, no. 3(69),  15–18
24. Dielectric spectroscopy of strongly correlated electronic states of vanadium dioxide
    
    Zhurnal Tekhnicheskoi Fiziki, 88:6 (2018),  877–882
25. Low-frequency dielectric relaxation in iron-doped Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system
    
    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1038–1040
26. Dielectric relaxation in thin layers of the Ge$_{28.5}$Рb$_{15}$S$_{56.5}$ glassy system
    
    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  912–915
27. Non-debye dielectric response in monolithic layers of silver stearate
    
    Fizika Tverdogo Tela, 59:2 (2017),  255–259
28. Current spectroscopy of defect states in As-Se glassy system
    
    Meždunar. nauč.-issled. žurn., 2017, no. 5-3(59),  147–153
29. Low-frequency dielectric relaxation in silver stearate layers
    
    Meždunar. nauč.-issled. žurn., 2016, no. 5-5(47),  16–20
30. Relaxor properties of single crystals of Na$_{1/2}$Bi$_{1/2}$TiO$_3$–KTaO$_3$
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:8 (2014),  50–55
31. Thermoactivation and dielectric spectroscopy of chitosan films
    
    Fizika Tverdogo Tela, 55:1 (2013),  193–196
32. Dielectric study of composite materials filled with ferroelectric ceramics
    
    Meždunar. nauč.-issled. žurn., 2013, no. 10(17),  12–14
33. Ultralow-frequency photoelectric response of amorphous As$_2$Se$_3$ layers
    
    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  944–947
34. Study of the structure of $a$-As$_2$Se$_3\langle$Bi$\rangle_x$ amorphous layers by dielectric spectroscopy
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  92–96
35. Electron-beam modification of the parameters of the insulator-metal phase transition in vanadium dioxide films
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:15 (2013),  78–85
36. Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:2 (2013),  1–6
37. Effect of bismuth dopant on the dielectric properties of modified As$_2$Se$_3$
    
    Fizika Tverdogo Tela, 53:3 (2011),  430–432
38. Investigation of the structure of an amorphous As–Se semiconductor system by relaxation methods
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1646–1651
39. Study of dielectric processes in (As$_2$Se$_3$)$_{1-x}$Bi$_x$ amorphous films
    
    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  622–624
40. Broadband dielectric response of amorphous arsenic triselenide layers grown by different methods
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  1–6
41. Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1038–1041
42. Temperature dependence of the dielectric parameters of thin arsenic triselenide layers with high bismuth content
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:20 (2010),  80–86
43. Dispersion of dielectric parameters in modified arsenic triselenide layers
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:17 (2010),  9–15