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Publications in Math-Net.Ru
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USE OF ASYMMETRIC EXPOSURES IN PLANAR WAVE X-RAY TOPOGRAPHY FOR THE
STUDY OF MICRODEFECTS IN SILICON-CRYSTALS
Zhurnal Tekhnicheskoi Fiziki, 62:4 (1992), 171–175
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Experimental study and computer simulation of high temperature dislocation images in X-ray section topograms in $\mathrm{Si}$
Fizika Tverdogo Tela, 29:5 (1987), 1392–1398
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Direct measurement of the parameters of x-ray dynamic scattering by silicon crystals at elevated temperatures
Fizika Tverdogo Tela, 28:9 (1986), 2597–2603
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Vicinal sectoriality and its relation to ADP crystal growth kinetics
Dokl. Akad. Nauk SSSR, 278:2 (1984), 358–361
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Realization of the dislocation free growth of ADP crystals under the X-ray topography control in situ
Dokl. Akad. Nauk SSSR, 260:4 (1981), 864–867
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Structure-composition inhomogeneities of three-row ribbon-chain silicates observed by the method of high-resolution $n$-beam electron microscopy
Dokl. Akad. Nauk SSSR, 249:2 (1979), 359–362
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Investigation of the growth kinetics of ADP crystals from solution by the “in-situ” method fo X-ray topography
Dokl. Akad. Nauk SSSR, 248:2 (1979), 356–358
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The role of the diffusion of point imperfections along dislocations in the process of plastic deformations
Dokl. Akad. Nauk SSSR, 158:4 (1964), 835–838
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Electron, microscope diffraction patterns used in measuring the bend of thin ribbon-shaped crystals caused by axial dislocations
Dokl. Akad. Nauk SSSR, 156:6 (1964), 1339–1340
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Accumulation of dislocations in crystals containing impurities
Dokl. Akad. Nauk SSSR, 136:6 (1961), 1331–1334
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Jumplike movement of dislocations in $\mathrm{NaCl}$ crystals
Dokl. Akad. Nauk SSSR, 133:4 (1960), 804–806
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Mechanism of the development of microcracks in crystals on plastic deformation
Dokl. Akad. Nauk SSSR, 123:4 (1958), 648–651
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The nature of unhomogeneous plastic flow of metal single crystals
Dokl. Akad. Nauk SSSR, 118:2 (1958), 277–279
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Неравномерности пластической деформации кристаллов
UFN, 65:3 (1958), 387–406
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The effect of thin mercury coatings on the strength of metallic single crystals
Dokl. Akad. Nauk SSSR, 116:5 (1957), 769–771
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On the change of electrical resistivity by elementary slip
Dokl. Akad. Nauk SSSR, 115:6 (1957), 1101–1103
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The influence of adsorption layers on the dispersion of graphite
Dokl. Akad. Nauk SSSR, 115:5 (1957), 946–948
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On complete X-ray dispersion study of graphite powders and colloid preparations
Dokl. Akad. Nauk SSSR, 113:5 (1957), 1102–1105
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Строение границ раздела в кристалле
UFN, 105:3 (1971), 616
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