Tuktamyshev Artur Raisovich

Publications in Math-Net.Ru

1. Formation of a stepped Si(100) surface and its effect on the growth of Ge islands
   
   Fizika i Tekhnika Poluprovodnikov, 52:3 (2018),  409–413
2. Splitting of frequencies of optical phonons in tensile-strained germanium layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 105:5 (2017),  305–310
3. Valence-band offsets in strained SiGeSn/Si layers with different tin contents
   
   Fizika i Tekhnika Poluprovodnikov, 51:3 (2017),  342–347
4. Strained multilayer structures with pseudomorphic GeSiSn layers
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1610–1614
5. Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1630–1634