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Publications in Math-Net.Ru
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Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
Fizika i Tekhnika Poluprovodnikov, 55:11 (2021), 1077–1080
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Optimization of vertical cavity lasers with intracavity metal layers
Fizika i Tekhnika Poluprovodnikov, 51:4 (2017), 547–550
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Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4$^\circ$ substrates
Fizika i Tekhnika Poluprovodnikov, 51:2 (2017), 276–280
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The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:18 (2017), 97–102
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GaAs/InGaAsN heterostructures for multi-junction solar cells
Fizika i Tekhnika Poluprovodnikov, 50:5 (2016), 663–667
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The influence of an In$_{0.52}$Al$_{0.48}$As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:6 (2016), 14–19
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MBE growth of GaP on a Si substrate
Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 569–572
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Photoluminescence of heterostructures with GaP$_{1-x}$N$_x$ and GaP$_{1-x-y}$N$_x$As$_y$ layers grown on GaP and Si substrates by molecular-beam epitaxy
Fizika i Tekhnika Poluprovodnikov, 49:4 (2015), 489–493
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Cylindrical multilayer metal–dielectric structures
Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:22 (2015), 61–65
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Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
Fizika i Tekhnika Poluprovodnikov, 48:12 (2014), 1640–1645
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Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
Fizika i Tekhnika Poluprovodnikov, 48:4 (2014), 518–522
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Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
Fizika i Tekhnika Poluprovodnikov, 48:3 (2014), 407–411
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Reduced absorption of light by metallic intra-cavity contacts: Tamm plasmon based laser mode engineering
Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:15 (2013), 64–71
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