Yunin Pavel Andreevich

Publications in Math-Net.Ru

1. Ультратонкие слои оксида церия для формирования субмикронных YBCO-структур
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  53–56
2. Anisotropic scattering effects in YBCO thin films
   
   Fizika Tverdogo Tela, 67:7 (2025),  1254–1261
3. Effect of the microstructure of ultrathin YBaCuO films on the nonlinear microwave response
   
   Fizika Tverdogo Tela, 67:7 (2025),  1236–1240
4. Schottky diodes based on monocrystalline Al/AlGaN/GaN heterostructures for zero-bias microwave detection
   
   Zhurnal Tekhnicheskoi Fiziki, 95:6 (2025),  1148–1156
5. CVD diamond structures with a $p$–$n$ junction – diodes and transistors
   
   Zhurnal Tekhnicheskoi Fiziki, 95:3 (2025),  540–548
6. Formation of planar structures with InGaN layers for red wavelength light sources
   
   Fizika i Tekhnika Poluprovodnikov, 59:7 (2025),  406–413
7. Andreev bound states and paramagnetic effect at low temperatures in YBCO thin films
   
   Fizika Tverdogo Tela, 66:8 (2024),  1264–1271
8. Structural and superconducting properties of tungsten and iridium films for low-temperature microcalorimeters
   
   Fizika Tverdogo Tela, 66:7 (2024),  1075–1080
9. Characteristics of YBCO|CeO$_2$|Al$_2$O$_3$ structures with decreasing thickness of the cerium oxide sublayer
   
   Fizika Tverdogo Tela, 66:6 (2024),  848–853
10. Features of the nonlinear microwave response of ultrathin YBaCuO films
    
    Fizika Tverdogo Tela, 66:6 (2024),  809–813
11. Influence of the ratio of group III and V fluxes on the structural, emissive properties properties and stimulated emission of planar structures with InGaN layers in the IR range
    
    Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  220–225
12. Electrophysical properties of multilayer DLC films with different $sp^3$-phase contents
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:17 (2024),  30–33
13. Thermal annealing of multilayer films of diamond-like carbon with a variable content of $sp^3$-phase
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:13 (2024),  12–15
14. Isotopically purified Si/SiGe epitaxial structures for quantum computing
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
15. Ferromagnetic GaMnAs layers obtained by implantation of manganese ions followed by pulsed laser annealing
    
    Fizika Tverdogo Tela, 65:12 (2023),  2230–2238
16. A criterion for determination of the upper critical fields $H_{c2}$ in YBCO thin films with different ion irradiation doses
    
    Fizika Tverdogo Tela, 65:6 (2023),  907–913
17. Influence of radiation exposure on the magnetic properties of feromagnetic/IrMn films with exchange bias
    
    Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  907–912
18. Features of formation of In$_x$Ga$_{1-x}$N bulk layers in the immiscibility gap of solid solutions ($x$ $\sim$ 0.6) by molecular beam epitaxy with plasma nitrogen activation
    
    Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  444–450
19. Plasma chemical deposition of hydrogenated DLC films with different hydrogen and $sp^3$-hybrid carbon content
    
    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  309–312
20. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
21. Formation of skyrmion states in ion-irradiated CoPt thin films
    
    Fizika Tverdogo Tela, 64:9 (2022),  1304–1310
22. Ion-irradiation effect on electron transport in YBCO thin films
    
    Fizika Tverdogo Tela, 64:9 (2022),  1162–1168
23. Effect of substrate misorientation on the properties of $p$-HEMT GaAs-based nanoheterostructures formed during MOCVD epitaxy
    
    Zhurnal Tekhnicheskoi Fiziki, 92:10 (2022),  1582–1587
24. Application of the GIXRD technique to investigation of damaged layers in NaNd(WO$_4$)$_2$ and NaNd(MoO$_4$)$_2$ ceramics irradiated with high-energy ions
    
    Zhurnal Tekhnicheskoi Fiziki, 92:8 (2022),  1137–1141
25. Study of active regions based on multiperiod GaAsN/InAs superlattice
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  1002–1010
26. Formation of heterostructures with multiple quantum wells InN/InGaN by the PA-MBE method on sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  848–854
27. Effect of hydrogen implantation dose on the relaxation of electrophysical characteristics of silicon-on-insulator structures after exposure to X-rays
    
    Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  753–758
28. PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  700–704
29. Influence of chloropentafluoroethane inductively coupled plasma parameters on the rate and characteristics of gallium arsenide etching
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  685–688
30. Effect of thermal annealing on the transport properties of Ti/AlGaN/GaN low-barrier Mott diodes
    
    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  627–629
31. Effect of the chloropentafluoroethane additive in chlorine-containing plasma on the etching rate and etching-profile characteristics of gallium arsenide
    
    Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  837–840
32. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
    
    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
33. Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  37–40
34. Experimental observation of $s$-component of superconducting pairing in thin disordered HTSC films based on YBCO
    
    Fizika Tverdogo Tela, 62:9 (2020),  1434–1439
35. Synchrotron, X-ray, and electron microscopic studies of catalyst systems based on multiwalled carbon nanotubes modified by copper nanoparticles
    
    Fizika Tverdogo Tela, 62:1 (2020),  172–179
36. The magnetoelectric effect in ferroelectric/ferromagnetic film hybrid systems with easy-plane and easy-axis anisotropy
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1917–1921
37. The microstructure of transition boundaries in multilayer Mo/Be systems
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1884–1892
38. Morphology and structure of defected niobium oxide nonuniform arrays formed by anodizing bilayer Al/Nb systems
    
    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1854–1859
39. Possibilities of the master mask method in analysis of characteristics of planar HTSC structures depending on superconducting film thickness
    
    Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020),  1677–1680
40. Atomic force microscopy examination of elementary processes in metalorganic compound hydride epitaxy of GaAs-based nanoheterostructures
    
    Zhurnal Tekhnicheskoi Fiziki, 90:5 (2020),  826–830
41. Carbon films produced by the pulsed laser method and their influence on the properties of GaAs structures
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  868–872
42. Formation of ohmic contacts to a diamond-like carbon layer deposited on a dielectric diamond substrate
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  865–867
43. Modification of the ratio between $sp^2/sp^3$-hybridized carbon components in PECVD diamond-like films
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  855–858
44. SIMS analysis of carbon-containing materials: content of carbon atoms in $sp^{2}$ and $sp^{3}$ hybridization states
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:6 (2020),  38–42
45. Microwave impedance of thin-film superconductor–normal metal hybrid structures with a high conductivity ratio
    
    Fizika Tverdogo Tela, 61:9 (2019),  1722–1728
46. Phase diagrams of thin disordered films based on HTSC YBa$_{2}$Cu$_{3}$O$_{7-x}$ in external magnetic fields
    
    Fizika Tverdogo Tela, 61:9 (2019),  1573–1578
47. Influence of thermal annealing on the properties of multilayer Mo/Be mirrors
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1783–1788
48. Magnetostriction effect in ferromagnetic films with easy-axis and easy-plane anisotropies
    
    Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019),  1736–1741
49. Emission properties of heavily doped epitaxial indium-nitride layers
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1395–1400
50. Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1354–1359
51. Plasma-chemical deposition of diamond-like films onto the surface of heavily doped single-crystal diamond
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1229–1232
52. A study of the isolation region of planar superconducting YBCO structures formed by the master mask method
    
    Fizika Tverdogo Tela, 60:11 (2018),  2100–2104
53. Influence of the rotation frequency of a disk substrate holder on the crystal structure characteristics of MOCVD-grown GaAs layers
    
    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  219–223
54. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
55. Verification of the hypothesis on the thermoelastic nature of deformation of $a$(0001)GaN layer grown on the sapphire $a$-cut
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1380–1383
56. Plasma chemical etching of gallium arsenide in C$_{2}$F$_{5}$Cl-based inductively coupled plasma
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1362–1365
57. Study of the structural and morphological properties of HPHT diamond substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1321–1325
58. Investigation of the anisotropy of the structural properties of GaN(0001) layers grown by MOVPE on $a$-plane (11$\bar2$0) sapphire
    
    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1300–1303
59. The gas-phase synthesis of a new functional hybrid material on the basis of multiwalled carbon nanotubes decorated with faceted aluminum nanocrystals
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  24–31
60. A new limitation of the depth resolution in tof-sims elemental profiling: the influence of a probing ion beam
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:8 (2018),  11–19
61. New cluster secondary ions for quantitative analysis of the concentration of boron atoms in diamond by time-of-flight secondary-ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:7 (2018),  52–60
62. Specific features of the photoexcitation spectra of epitaxial InN layers grown by molecular-beam epitaxy with the plasma activation of nitrogen
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1594–1598
63. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
64. Low-temperature deposition of SiN$_ x$ films in SiH$_{4}$/Ar + N$_{2}$ inductively coupled plasma under high silane dilution with argon
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1503–1506
65. Selective analysis of the elemental composition of InGaAs/GaAs nanoclusters by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:10 (2017),  50–59
66. Phase transitions in hybrid SFS structures with thin superconducting layers
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:5 (2016),  336–341
67. Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1657–1661
68. Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1647–1651
69. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
70. Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1459–1462
71. Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  596–599
72. Features of InN growth by nitrogen-plasma-assisted MBE at different ratios of fluxes of group-III and -V elements
    
    Fizika i Tekhnika Poluprovodnikov, 50:2 (2016),  264–268
73. Extremely deep profiling analysis of the atomic composition of thick ($>$ 100 $\mu$m) GaAs layers within power PIN diodes by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:15 (2016),  27–35
74. A study of planar structures formed on the modified Al$_{2}$O$_{3}$ surfaces determining the topology of superconducting elements during YBa$_{2}$Cu$_{3}$O$_{7-d}$ deposition
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:11 (2016),  82–90
75. Pyrolytic deposition of nanostructured titanium carbide coatings on the surface of multiwalled carbon nanotubes
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016),  40–46
76. Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:5 (2016),  40–48
77. Peculiarities in magnetron sputtering of YBCO epitaxial films for applications in superconductor electronics devices
    
    Zhurnal Tekhnicheskoi Fiziki, 85:11 (2015),  109–116
78. Si$_3$N$_4$ layers for the in-situ passivation of GaN-based HEMT structures
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1469–1472
79. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
80. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
81. Structural and optical properties of GaAsSb QW heterostructures grown by laser deposition
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  112–116
82. Raman spectroscopy of InGaAs/GaAs nanoheterostructures $\delta$-doped with Mn
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  102–106
83. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
84. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  15–20
85. Single-crystal GaN/AlN layers on CVD diamond
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015),  73–80
86. The waveguide effect of InGaAs quantum wells in a GaAs structure on Si substrate with Ge buffer layer
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  72–78
87. High-rate growth of InN films on fianite and sapphire substrates by metalorganic vapor phase epitaxy with plasma-assisted nitrogen activation
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:6 (2015),  17–25
88. Thin single-crystal Ge layers on 2" Si substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:1 (2015),  71–78
89. Growth and formation of the microstructure of YBCO films deposited by magnetron sputtering on fianite substrates
    
    Zhurnal Tekhnicheskoi Fiziki, 84:10 (2014),  68–72
90. Use of related parameters in X-ray diffraction analysis of multilayer structures with allowance for the layer growth time
    
    Zhurnal Tekhnicheskoi Fiziki, 84:3 (2014),  94–98
91. Quantitative calibration and germanium SIMS depth profiling in Ge$_x$Si$_{1-x}$/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1138–1146
92. A new approach to the diagnostics of nanoislands in Ge$_x$Si$_{1-x}$/Si heterostructures by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:14 (2014),  36–46
93. Study of multilayered SiGe semiconductor structures by X-ray diffractometry, grazing-incidence X-ray reflectometry, and secondary-ion mass spectrometry
    
    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1580–1585
94. Depth profiling of fullerene-containing structures by time-of-flight secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:24 (2013),  45–54
95. Changes in the elemental composition and microstructure of an YBa$_2$Cu$_3$O$_{7-\delta}$ target during magnetron sputtering
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:19 (2013),  41–50
96. Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1515–1520
97. Analysis of the composition of (Al,Ga)As alloys by secondary ion mass spectroscopy and X-ray diffractometry
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1419–1423
98. A new alternative to secondary CsM$^+$ ions for depth profiling of multilayer metal structures by secondary ion mass spectrometry
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:24 (2012),  75–85