Shaleev Mikhail Vladimirovich

Publications in Math-Net.Ru

1. Fabrication of dielectric resonators on the light-emitting GeSi heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:1 (2025),  128–135
2. Approach for obtaining Ge/Si(001) self-assembled hut wires for hole spin qubits
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:22 (2025),  17–20
3. Isotopically purified Si/SiGe epitaxial structures for quantum computing
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:10 (2024),  22–25
4. Effect of optical excitation conditions on the spectral and temporal characteristics of the radiation from two-dimensional photonic crystals with Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  251–258
5. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
6. Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  29–32
7. Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  766–772
8. Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1150–1157
9. Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals
   
   Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  708–715
10. Visible emission from a dense biexciton gas in SiGe/Si quantum wells under external anisotropic strain
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 107:6 (2018),  371–377
11. On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1443–1446
12. Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
    
    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1599–1604
13. Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1579–1582
14. Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:4 (2016),  229–234
15. Fine structure of the emission spectrum of a two-dimensional electron-hole liquid in SiGe/Si quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:3 (2016),  161–166
16. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
17. Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1657–1661
18. On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1629–1633
19. Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1532–1536
20. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
21. Impact of growth and annealing conditions on the parameters of Ge/Si(001) relaxed layers grown by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1463–1468
22. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1458–1462
23. Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer
    
    Fizika i Tekhnika Poluprovodnikov, 49:8 (2015),  1129–1135
24. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  21–24
25. Transition from the two- to three-dimensional growth of Ge films upon deposition onto relaxed SiGe/Si(001) buffer layers
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  404–409
26. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
27. Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  202–206
28. Study of the transition of the epitaxial Ge film from layer-to-layer to three-dimensional growth in heterostructures with strained SiGe sublayers
    
    Fizika i Tekhnika Poluprovodnikov, 44:4 (2010),  538–543