Gorshkov Dmitrii Vital'evich

Publications in Math-Net.Ru

1. Photosensitivity of a metal-insulator-semiconductor field-effect transistor based on PbSnTe:In film with a composition close to the bands inversion
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  22–25
2. Studying C–V characteristics of MIS structures with ALD Al$_2$O$_3$ on $n$- and $p$-CdHgTe stabilized with ultra-thin native oxide
   
   Fizika i Tekhnika Poluprovodnikov, 56:9 (2022),  915–921
3. MIS transistor based on PbSnTe : In film with an Al$_2$O$_3$ gate dielectric
   
   Fizika i Tekhnika Poluprovodnikov, 56:2 (2022),  243–249
4. Investigation of metal–insulator–semiconductor structure based on CdHgTe and HfO$_2$
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  16–19
5. Features of MIS structures based on insulating PbSnTe:In films with the composition in the vicinity of the band inversion related to their ferroelectric properties
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1122–1128
6. The effect of the growth temperature on the passivating properties of the Al$_{2}$O$_{3}$ films formed by atomic layer deposition on the CdHgTe surface
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:15 (2020),  14–17
7. Study of the density of interface states at the insulator/In$_{0.52}$Al$_{0.48}$As interface
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:10 (2020),  10–13
8. Surface сonductivity dynamics in PbSnTe : In films in the vicinity of a band inversion
   
   Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1207–1211
9. Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)-vacuum interface
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 104:2 (2016),  128–132