Emelyanov Evgenii Aleksandrovich

Publications in Math-Net.Ru

1. InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  783–794
2. Formation of self-assembled quantum dots during GaSbP deposition on AlP surface
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  185–191
3. GaP$_x$As$_{1-x}$ solid solution growth by molecular beam epitaxy: phenomenological description of the $x$ dependence from growth conditions on GaAs(001) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  79–88
4. Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  37–41
5. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
   
   Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
6. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
7. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
8. Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region
   
   Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  929–932
9. A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  11–14
10. A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
    
    Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1071–1078
11. GaAs/GaP quantum-well heterostructures grown on Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1167–1171
12. The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  512–519
13. Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018),  19–25
14. Magnetoabsorption of Dirac fermions in InAs/GaSb/InAs “Three-Layer” gapless quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:11 (2017),  696–701
15. Interlayer current near the edge of an $\mathrm{InAs/GaSb}$ double quantum well in proximity with a superconductor
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017),  497–498
16. Formation of low-dimensional structures in the InSb/AlAs heterosystem
    
    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1282–1288
17. Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  40–44
18. Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:1 (2016),  24–25
19. Molecular beam epitaxy of A$^{\mathrm{III}}$P$_x$As$_{1-x}$ solid solutions: Mechanism of composition formation in the sublattice of a group V element
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  163–170