Preobrazhenskii Valerii Vladimirovich

Publications in Math-Net.Ru

1. Resonant reflection of light from a periodic system of quasi-two-dimensional layers of Bi nanoparticles in GaAs
   
   Fizika Tverdogo Tela, 67:11 (2025),  2203–2207
2. Bragg resonance in the system of layers of plasmonic Bi nanoparticles in GaAs matrix
   
   Fizika Tverdogo Tela, 67:1 (2025),  39–43
3. Formation of quasi-two-dimensional layers of bismuth nanoparticles in epitaxial layers of gallium arsenide
   
   Fizika Tverdogo Tela, 66:9 (2024),  1514–1519
4. InGaP/GaAs/Ge triple-junction solar cell with a thinned germanium substrate
   
   Zhurnal Tekhnicheskoi Fiziki, 94:5 (2024),  783–794
5. Formation of self-assembled quantum dots during GaSbP deposition on AlP surface
   
   Fizika i Tekhnika Poluprovodnikov, 58:4 (2024),  185–191
6. Microstructure features of nanosized AsSb precipitates in LT-GaAsSb
   
   Fizika Tverdogo Tela, 65:12 (2023),  2309–2316
7. Influence of intermediate low-temperature heating on precipitation in nonstoichiometric GaAs
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  507–512
8. GaP$_x$As$_{1-x}$ solid solution growth by molecular beam epitaxy: phenomenological description of the $x$ dependence from growth conditions on GaAs(001) substrate
   
   Fizika i Tekhnika Poluprovodnikov, 57:2 (2023),  79–88
9. Structure and optical properties of a composite AsSb–Al$_{0.6}$Ga$_{0.4}$As$_{0.97}$Sb$_{0.03}$ metamaterial
   
   Fizika i Tekhnika Poluprovodnikov, 57:1 (2023),  71–76
10. Arrays of quasi-one-dimensional GaAs nanocrystals grown on the oxidized surface of the Si/GaAs(001) heterostructure: effect of the Si epitaxial layer on the array structure
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:3 (2023),  37–41
11. Molecular beam epitaxy of GaSb on vicinal Si(001) substrates: influence of the conditions of layer nucleation on their structural and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 56:10 (2022),  980–992
12. Growth of GaAs$_{1-x}$Bi$_x$ layers by molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  279–284
13. Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  139–146
14. Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
    
    Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1289–1295
15. Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  929–932
16. Optimization of the In$_{0.3}$Ga$_{0.7}$As-layer thickness in a triple-junction In$_{0.3}$Ga$_{0.7}$As/GaAs/In$_{0.5}$Ga$_{0.5}$P solar cell
    
    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  65–68
17. A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020),  11–14
18. A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
    
    Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019),  1071–1078
19. Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles
    
    Optics and Spectroscopy, 126:5 (2019),  573–577
20. GaAs/GaP quantum-well heterostructures grown on Si substrates
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1167–1171
21. The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method
    
    Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  512–519
22. Diffusion blurring of GaAs quantum wells grown at low temperature
    
    Fizika i Tekhnika Poluprovodnikov, 52:13 (2018),  1597–1600
23. Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
    
    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  525
24. Resonant optical reflection from AsSb–AlGaAs metamaterials and structures
    
    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  471
25. Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018),  19–25
26. Magnetoabsorption of Dirac fermions in InAs/GaSb/InAs “Three-Layer” gapless quantum wells
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:11 (2017),  696–701
27. Interlayer current near the edge of an $\mathrm{InAs/GaSb}$ double quantum well in proximity with a superconductor
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017),  497–498
28. Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells
    
    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  40–44
29. Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 104:1 (2016),  24–25
30. Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1620–1624
31. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1519–1526
32. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1710–1713
33. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials
    
    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1635–1639
34. Molecular beam epitaxy of A$^{\mathrm{III}}$P$_x$As$_{1-x}$ solid solutions: Mechanism of composition formation in the sublattice of a group V element
    
    Fizika i Tekhnika Poluprovodnikov, 49:2 (2015),  163–170
35. Fröhlich resonance in the AsSb/AlGaAs system
    
    Fizika Tverdogo Tela, 56:10 (2014),  1891–1895
36. Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1578–1582
37. Effect of the growth temperature on the statistical parameters of GaN surface morphology
    
    Fizika i Tekhnika Poluprovodnikov, 48:7 (2014),  898–901
38. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier
    
    Fizika i Tekhnika Poluprovodnikov, 47:9 (2013),  1196–1203
39. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1043–1047
40. New system of self-assembled GaSb/GaP quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 46:12 (2012),  1571–1575
41. Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1314–1318
42. Electron microscopy of GaAs Structures with InAs and as quantum dots
    
    Fizika i Tekhnika Poluprovodnikov, 45:12 (2011),  1642–1645
43. Anisotropic negative magnetoresistance of quasi two-dimensional $\delta$-doped $\mathrm{GaAs}$ layers
    
    Fizika Tverdogo Tela, 30:10 (1988),  3148–3150