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Scheglov Mikhail Petrovich

Publications in Math-Net.Ru

  1. Полуполярный нитрид алюминия: эпитаксия объемного материала на наноструктурированной кремниевой подложке

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:4 (2026),  25–28
  2. Magnetic properties of submicron $\alpha$-Fe$_2$O$_3$ layers grown on sapphire by mist-CVD

    Fizika Tverdogo Tela, 67:7 (2025),  1274–1278
  3. Выращивание кристаллов K$_2$O $\times$ 8Ga$_2$O$_3$ из раствора в расплаве KF и исследование их свойств

    Optics and Spectroscopy, 133:11 (2025),  1150–1153
  4. $\alpha$-Cr$_2$O$_3$ layers grown on (100) $\beta$-Ga$_2$O$_3$ substrates by ultrasonic vapor chemical epitaxy (mist-CVD)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:20 (2025),  21–23
  5. The epitaxy of AlN$(11\bar{2}2)$ layers on GaN$(11\bar{2}2)$/$m$-Al$_2$О$_3$ template by hydride vapour-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:16 (2025),  42–44
  6. Cyclotron resonance in YFe$_5$O$_{12}$ single crystals

    Fizika Tverdogo Tela, 66:11 (2024),  1888–1894
  7. HVPE epitaxy of semipolar AlN(10$\bar{1}$1) layers on the AlN/Si(100) template

    Fizika i Tekhnika Poluprovodnikov, 58:9 (2024),  474–477
  8. Optical characterization of InGaAsP/InP(001) heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:15 (2024),  47–50
  9. Deep ultraviolet photodetectors based on the In$_2$O$_3$–Ga$_2$O$_3$ mixed compounds films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:5 (2024),  7–9
  10. Structural transformation of $\alpha$- and $\kappa$-Ga$_2$O$_3$ thin films on sapphire upon annealing in air

    Fizika Tverdogo Tela, 65:10 (2023),  1715–1721
  11. Record thick $\kappa(\varepsilon)$-Ga$_2$O$_3$ epitaxial layers grown on GaN/$c$-sapphire

    Zhurnal Tekhnicheskoi Fiziki, 93:3 (2023),  403–408
  12. High sensitivity of halide vapor phase epitaxy grown indium oxide films to ammonia

    Fizika i Tekhnika Poluprovodnikov, 57:3 (2023),  145–152
  13. Synthesis of thin single-crystalline $\alpha$-Cr$_2$O$_3$ layers on sapphire substrates by ultrasonic-assisted chemical vapor deposition

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  43–46
  14. The effect of liquid Silicon on the AlN crystal growth

    Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  527
  15. Anisotropic stresses in $\mathrm{GaN}(11\bar20)$ layers on an $r$-$\mathrm{Al}_2\mathrm{O}_3$ substrate during hydride vapor phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  266–270
  16. Electrical conductive and photoelectrical properties of heterostructures based on gallium and chromium oxides with corundum structure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:22 (2022),  24–27
  17. Growth of thick $\varepsilon(\kappa)$-Ga$_2$O$_3$ films by halide vapor phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:19 (2022),  35–38
  18. Gas-sensing properties of In$_2$O$_3$–Ga$_2$O$_3$ alloy films

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:14 (2022),  37–41
  19. Vapor-phase epitaxy of AlN layers on AlN/Si(111) templates synthesized by reactive magnetron sputtering

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:8 (2020),  29–31
  20. Thick epitaxial $\alpha$-Ga$_{2}$O$_{3}$ : Sn layers on a patterned sapphire substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:5 (2020),  27–29
  21. Electric polarization in ErCrO$_{3}$ induced by restricted polar domains

    Fizika Tverdogo Tela, 61:3 (2019),  501–509
  22. Electric polarization in YCrO$_{3}$ induced by restricted polar domains of magnetic and structural natures

    Fizika Tverdogo Tela, 61:1 (2019),  95–103
  23. Synthesis of hexagonal AlN и GaN layers on a Si(100) substrate by chloride vapor-phase epitaxy

    Zhurnal Tekhnicheskoi Fiziki, 89:4 (2019),  574–577
  24. Investigation of composition uniformity on thickness of GaInAsP layers grown on InP substrates by vapor-phase epitaxy

    Fizika i Tekhnika Poluprovodnikov, 53:11 (2019),  1512–1518
  25. Properties of semipolar GaN grown on a Si(100) substrate

    Fizika i Tekhnika Poluprovodnikov, 53:7 (2019),  1006–1009
  26. Thick $\alpha$-Ga$_{2}$O$_{3}$ layers on sapphire substrates grown by halide epitaxy

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  789–792
  27. Luminescence properties of GaInAsP layers with graded composition–depth profiles grown on InP substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  22–25
  28. Epitaxy of GaN(0001) and GaN(10$\bar1$1) layers on Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:11 (2019),  3–5
  29. Frozen superparaelectric state of local polar regions in GdMn$_{2}$O$_{5}$ and Gd$_{0.8}$Ce$_{0.2}$Mn$_{2}$O$_{5}$

    Fizika Tverdogo Tela, 60:3 (2018),  531–542
  30. Change in the character of biaxial stresses with an increase in $x$ from 0 to 0.7 in Al$_{x}$Ga$_{1-x}$N:Si layers obtained by ammonia molecular beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 52:2 (2018),  233–237
  31. A study of the composition gradient of GaInAsP layers formed on InP by vapor-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018),  17–24
  32. Reciprocal-space maps of X-ray diffraction intensity distribution and their relation to the dislocation structure of epitaxial layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  96–102
  33. Semipolar gan layers grown on nanostructured Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:12 (2018),  45–51
  34. Hexagonal AlN layers grown on sulfided Si(100) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:2 (2018),  96–103
  35. Room-temperature electric polarization induced by phase separation in multiferroic GdMn$_2$O$_5$

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:4 (2016),  274–279
  36. Prevention of AlN crystal from cracking on SiC substrates by evaporation of the substrates

    Fizika Tverdogo Tela, 57:12 (2015),  2400–2404
  37. Block structure and residual stresses in tubular sapphire single crystals grown by the Stepanov method

    Fizika Tverdogo Tela, 57:11 (2015),  2190–2196
  38. Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:9 (2014),  48–54
  39. Investigation of the transition layer in 3C-SiC/6H-SiC heterostructures

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1554–1558
  40. Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:6 (2013),  1–8
  41. GaAs $p$–$i$–$n$ structures for X-ray detectors grown on Ge and GaAs substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012),  1–7
  42. Epitaxy of gallium nitride in semi-polar direction on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012),  21–26
  43. X-ray diffraction diagnostics methods as applied to highly doped semiconductor single crystals

    Zhurnal Tekhnicheskoi Fiziki, 80:4 (2010),  105–114
  44. Microstructure and strain of ZnO molecular-beam epitaxial layers on sapphire

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  265–269
  45. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:11 (2010),  17–23
  46. MEASURING THE SCATTERING OF X-RAYS UNDER THE MIRROR REFLECTION IN THE DIFFERENTIAL REGIME

    Zhurnal Tekhnicheskoi Fiziki, 57:7 (1987),  1436–1438

© Steklov Math. Inst. of RAS, 2026