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Il'inskaya Natal'ya Dmitrievna

Publications in Math-Net.Ru

  1. Контактные системы “мостикового” типа в InGaAs/InP фотоэлектрических преобразователях

    Zhurnal Tekhnicheskoi Fiziki, 96:2 (2026),  345–350
  2. InAs/InAsSbP bridge photodiodes: features of the fabrication technology

    Fizika i Tekhnika Poluprovodnikov, 59:8 (2025),  505–509
  3. Bridge-contact microdisk lasers formed by wet chemical etching

    Fizika i Tekhnika Poluprovodnikov, 59:1 (2025),  37–42
  4. Light-emitting diodes based on GaInAsSb solid solutions for the spectral range of 2.5–2.8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  34–37
  5. Lasing in InGaN/GaN/AlGaN disk microstructures on silicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:11 (2025),  41–45
  6. Formation of the light extracting surface of IR (850 nm) light-emitting diodes

    Zhurnal Tekhnicheskoi Fiziki, 94:6 (2024),  888–893
  7. Development of a method for etching the InAs/InAsSbP photodiode heterostructures

    Fizika i Tekhnika Poluprovodnikov, 57:8 (2023),  710–715
  8. Plasmachemical etching in postgrowth technology of photovoltaic converters

    Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022),  604–607
  9. Post-growth technology of multi-junction photovoltaic converters based on A$^3$B$^5$ heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  108–112
  10. Photodetectors based on GaInAsSb/GaAlAsSb heterostructures for the practical tasks of precision diode laser spectroscopy

    Fizika i Tekhnika Poluprovodnikov, 56:5 (2022),  508–515
  11. Electrochemical deposition of contact materials in postgrowth technology of photovoltaic converters

    Fizika i Tekhnika Poluprovodnikov, 56:3 (2022),  376–379
  12. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
  13. Uncooled photodiodes for detecting pulsed infrared radiation in the spectral range of 0.9–1.8 $\mu$m

    Fizika i Tekhnika Poluprovodnikov, 55:7 (2021),  607–613
  14. High-voltage 4$H$-SiC based avalanche diodes with a negative beve

    Fizika i Tekhnika Poluprovodnikov, 55:4 (2021),  349–353
  15. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
  16. High-voltage avalanche 4$H$-SiC diodes with a protective semi-insulating area

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:6 (2021),  48–50
  17. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
  18. Formation of SiC mesastructures with gently sloping sidewalls by dry selective etching through a photoresist mask

    Zhurnal Tekhnicheskoi Fiziki, 90:6 (2020),  997–1000
  19. Photodiodes for detecting the emission of quantum-sized disk lasers operating on whispering gallery modes (2.2 – 2.3 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 54:7 (2020),  677–683
  20. Edge-termination technique for high-voltage mesa-structure 4$H$-SiC devices: negative beveling

    Fizika i Tekhnika Poluprovodnikov, 54:2 (2020),  207–211
  21. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode

    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
  22. Light–emitting diodes based on asymmetrical double InAs/InAsSb/InAsSbP heterostructure for CO$_{2}$ ($\lambda$ = 4.3 $\mu$m) and CO ($\lambda$ = 4.7 $\mu$m) detection

    Fizika i Tekhnika Poluprovodnikov, 53:6 (2019),  832–838
  23. Development of methods for liquid etching of a separation mesa-structure in creating multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:24 (2019),  14–16
  24. Lasing in 9.6-$\mu$m quantum cascade lasers

    Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
  25. Influence of the ohmic contact structure on the performance of GaAs/AlGaAs photovoltaic converters

    Zhurnal Tekhnicheskoi Fiziki, 88:8 (2018),  1211–1215
  26. InAsSbP photodiodes for 2.6–2.8-$\mu$m wavelengths

    Zhurnal Tekhnicheskoi Fiziki, 88:2 (2018),  234–237
  27. Ridge waveguide structure for lattice-matched quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1499–1502
  28. GaSb/GaAlAsSb heterostructure photodiodes for the near-IR spectral range

    Fizika i Tekhnika Poluprovodnikov, 52:9 (2018),  1094–1099
  29. Photoconductivity amplification in a type-II $n$-GaSb/InAs/$p$-GaSb heterostructure with a single QW

    Fizika i Tekhnika Poluprovodnikov, 52:8 (2018),  906–911
  30. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
  31. Investigation of the modified structure of a quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
  32. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
  33. Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:4 (2018),  95–102
  34. Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures

    Fizika i Tekhnika Poluprovodnikov, 51:2 (2017),  269–275
  35. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
  36. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
  37. Photodiode 1 $\times$ 64 linear array based on a double $p$-InAsSbP/$n$-InAs$_{0.92}$Sb$_{0.08}$/$n^{+}$-InAs heterostructure

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  657–662
  38. Photoelectric properties of photodiodes based on InAs/InAsSbP heterostructures with photosensitive-area diameters of 0.1–2.0 mm

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1720–1726
  39. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials

    Fizika i Tekhnika Poluprovodnikov, 49:12 (2015),  1635–1639
  40. Resistance of 4H-SiC Schottky barriers at high forward-current densities

    Fizika i Tekhnika Poluprovodnikov, 49:7 (2015),  951–955
  41. Electrical properties of Pd-oxide-InP structures

    Fizika i Tekhnika Poluprovodnikov, 49:3 (2015),  376–378
  42. Cylindrical multilayer metal–dielectric structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:22 (2015),  61–65
  43. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  30–36
  44. MBE-grown GaAs:Si/GaAs:Be tunnel diodes for multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015),  82–88
  45. Mode synchronization in a laser with coupled disk cavities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015),  77–83
  46. Fröhlich resonance in the AsSb/AlGaAs system

    Fizika Tverdogo Tela, 56:10 (2014),  1891–1895
  47. High-power LEDs based on InGaAsP/InP heterostructures

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1693–1696
  48. Electroluminescence properties of a whispering-gallery-mode laser with coupled disk cavities

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1434–1438
  49. $P$-InAsSbP/$n^0$-InAs/$n^+$-InAs photodiodes for operation at moderate cooling (150–220 K)

    Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1394–1397
  50. Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1249–1253
  51. Study of postgrowth processing in the fabrication of quantum-cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1132–1137
  52. Growth specifics of GaAs nanowires in mesa

    Fizika Tverdogo Tela, 55:4 (2013),  645–649
  53. Photonic crystals and Bragg gratings for the mid-IR and terahertz spectral ranges

    Fizika i Tekhnika Poluprovodnikov, 47:12 (2013),  1595–1598
  54. Manifestation of the Purcell effect in the conductivity of InAs/AlSb short-period superlattices

    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1489–1492
  55. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 $\mu$m based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1109–1115
  56. Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  821–824
  57. Effect of rapid thermal annealing on the current-voltage characteristics of 4H-SiC Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  83–86
  58. Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  45–52
  59. Preparation of a strip structure for quantum-cascade lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  32–37
  60. Increasing output power of LEDs ($\lambda$ = 1.7–2.4 $\mu$m) by changing directions of reflected light fluxes in GaSb/GaInAsSb/GaAlAsSb heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013),  39–45
  61. Front surface illuminated InAsSb photodiodes (long-wavelength cutoff $\lambda_{0.1}$ = 4.5 $\mu$m) operating at temperatures of 25–80$^\circ$C

    Fizika i Tekhnika Poluprovodnikov, 46:5 (2012),  708–713
  62. Leakage currents in 4H-SiC JBS diodes

    Fizika i Tekhnika Poluprovodnikov, 46:3 (2012),  411–415
  63. Characterization of quantum-confinement whispering-gallery-mode lasers operating above room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:14 (2012),  27–31
  64. Photodiodes based on InAs/InAsSb/InAsSbP heterostructures with quantum efficiency increased by changing directions of reflected light fluxes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  43–49
  65. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  31–39
  66. Mid-infrared radiation sources based on coupled disk cavities

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  7–13
  67. Uncooled photodiodes based on InAsSb(P) with long-wavelength cut-off at $\lambda$ = 5.8 $\mu$m

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:5 (2012),  85–90
  68. Anisotropic polarization of radiation in quantum-confinement whispering-gallery-mode lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:3 (2012),  4–9
  69. Harmonic mode-locking in quantum dot lasers with tunnel-coupled waveguides

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:2 (2012),  25–31
  70. Effect of temperature on the electroluminescent properties of mid-IR ($\lambda_{\mathrm{max}}\approx$ 4.4 $\mu$m) flip-chip LEDs based on an InAs/InAsSbP heterostructure

    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1560–1563
  71. Effect of AlGaAs–(AlGa)$_x$O$_y$ pedestal parameters on characteristics of a microdisk laser with active region based on InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 45:7 (2011),  992–995
  72. High-voltage (3.3 kV) 4H-SiC JBS diodes

    Fizika i Tekhnika Poluprovodnikov, 45:5 (2011),  677–681
  73. Room-temperature photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for extended (1.5–4.8 $\mu$m) spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:19 (2011),  95–103
  74. Passive mode-locked laser based on quantum dot superlattice

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  31–36
  75. Photodiodes based on InAs/InAs$_{0.88}$Sb$_{0.12}$/InAsSbP heterostructures for 2.5–4.9 $\mu$m spectral range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:1 (2011),  11–17
  76. Excess leakage currents in high-voltage 4H-SiC Schottky diodes

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  680–683
  77. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy ($\lambda\approx$ 3.3 $\mu$m)

    Fizika i Tekhnika Poluprovodnikov, 44:2 (2010),  278–284
  78. Generating broadband random Gaussian signals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:15 (2010),  102–110
  79. Fast-response $p$–$i$–$n$ photodiodes for 0.9–2.4 $\mu$m wavelength range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:9 (2010),  43–49
  80. LEDs based on InAs/InAsSb heterostructures for CO$_2$ spectroscopy ($\lambda$ = 4.3 $\mu$m)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:1 (2010),  105–110
  81. Совершенствование процесса заращивания и получение одномодовых зарощенных InGaAsP/InP-лазеров ($\lambda=1.3$ мкм) с мощностью излучения 160 мВт

    Fizika i Tekhnika Poluprovodnikov, 25:8 (1991),  1414–1418
  82. GROWN SINGLE-MODE CONTINUOUS INGAASP/INP SEPARATE CONFINEMENT LASERS WITH (LAMBDA = 1.3 MU-M)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:6 (1991),  17–21
  83. LOCAL EPITAXY OF SILICON-CARBIDE FROM LIQUID-PHASE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:4 (1991),  77–80
  84. DIAGNOSTICS OF INGAASP/INP HETEROBOUNDARIES BY AUGER SHAPES OF SLANT SECTIONS OBTAINED THROUGH CHEMICAL ETCHING

    Zhurnal Tekhnicheskoi Fiziki, 60:10 (1990),  177–180
  85. INJECTION HETEROLASERS WITH DISTRIBUTED FEEDBACK IN INGAASSB/GASB SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:2 (1990),  58–62
  86. SCHOTTKY BARRIERS AND INGAAS/INP-BASED FIELD TRANSISTORS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:19 (1988),  1807–1810
  87. HIGH-TEMPERATURE SIC-6H FIELD TRANSISTOR WITH THE P-N LOCKS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:4 (1988),  289–293
  88. STUDY OF THE DURABILITY OF CONTINUOUS INGAASP/INP (LAMBDA=1.3 MU-M) MS SEPARATE CONFINEMENT LASERS

    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1822–1824
  89. CURRENT CONTROL BY CROSS-SECTIONS OF THE THICKNESS AND CURRENT DEOXIDATION OF LAYERS OF ALGAAS CULTIVATED IN GROOVES

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  778–782
  90. Power separate confinement $In\,Ga\,As\,P/In\,P$-based lasers for FOCD ($\lambda=1,55$ mu-m, $T=300$ K, $P=50$ mVt)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:9 (1987),  535–537
  91. MESA-STRIPE INGAASP/INP(LAMBDA=1.5MKM) LASERS OF CONTINUOUS ACTION

    Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1872–1876
  92. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
  93. High-power mesastrip PO $In\,Ga\,As/In\,P$ lasers for FOCD ($\lambda=1.3$ mu-m, $t=18^\circ$ C, $i=300$ mA, $p=28$ mVt in the fiber of $50\,\mu m$ diameter

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:22 (1985),  1345–1349
  94. PHOTO-TRANSISTOR BASED ON N-P-N HETEROSTRUCTURES IN THE INP-INGAASP SYSTEM

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1294–1297
  95. SPONTANEOUS END INGAASP/INP DHS-EMITTERS FOR THE 200 MKM IN DIAMETER FOC (FIBER-OPTICAL COUPLER)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:21 (1984),  1286–1290
  96. LOW-THRESHOLD MEZOBAND INGAASP/INP CONTINUOUS OPERATION LASERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  961–964
  97. FACE SPONTANEOUS EMITTERS BASED ON DHS (DOUBLE HETEROSTRUCTURES) INGAASP(GAMMA-CONGRUENT-TO-1,3MKM) WITH ETA-B-CONGRUENT-TO-6-PERCENT AT 300K

    Zhurnal Tekhnicheskoi Fiziki, 53:7 (1983),  1408–1411

© Steklov Math. Inst. of RAS, 2026