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Zadiranov Yurii Mikhailovich

Publications in Math-Net.Ru

  1. Charge states of single quantum dots in a microcavity $p-n-p$ heterostructure with the built-in Coulomb blockade

    Pis'ma v Zh. Èksper. Teoret. Fiz., 121:5 (2025),  386–392
  2. Single-photon emission in the telecom C-band in a micropillar cavity with an InAs/InGaAs quantum dot

    Pis'ma v Zh. Èksper. Teoret. Fiz., 121:3 (2025),  189–193
  3. Surface lasing in micropillar cavity lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:21 (2025),  58–62
  4. Broadband phase modulator based on a multimode channel waveguide in thin-film lithium niobate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:8 (2025),  25–29
  5. Bimodal whispering-gallery mode lasing in micropillar cavity lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:5 (2025),  41–44
  6. Solar-blind Schottky photodiodes based on AlGaN:Si/AlN, grown by plasma-activated molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:20 (2024),  16–19
  7. Analysis of the internal optical losses of the 89X nm-range intracavity-contacted vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:20 (2023),  43–46
  8. Plasmachemical etching in postgrowth technology of photovoltaic converters

    Zhurnal Tekhnicheskoi Fiziki, 92:4 (2022),  604–607
  9. Post-growth technology of multi-junction photovoltaic converters based on A$^3$B$^5$ heterostructures

    Zhurnal Tekhnicheskoi Fiziki, 92:1 (2022),  108–112
  10. Source of indistinguishable single photons based on epitaxial InAs/GaAs quantum dots for integration in quantum computing schemes

    Pis'ma v Zh. Èksper. Teoret. Fiz., 113:4 (2021),  248–255
  11. Investigation of methods for texturing light-emitting diodes based on AlGaAs/GaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 55:11 (2021),  1086–1090
  12. High-voltage 4$H$-SiC Schottky diodes with field-plate edge termination

    Fizika i Tekhnika Poluprovodnikov, 55:2 (2021),  188–194
  13. Period of “droplet” quasi-Bessel beam generated with the round-tip axicon

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:20 (2021),  48–51
  14. Plasmachemical and wet etching in the postgrowth technology of solar cells based on the GaInP/GaInAs/Ge heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:3 (2021),  14–17
  15. Measuring geometric parameters of a high-power infrared laser beam near the focus for applications in a laser-plasma short-wave radiation source

    Optics and Spectroscopy, 128:8 (2020),  1224–1228
  16. Micro-profiling of 4$H$-SiC by dry etching to form a Schottky barrier diode

    Fizika i Tekhnika Poluprovodnikov, 54:1 (2020),  97–102
  17. Highly efficient semiconductor emitter of single photons in the red spectral range

    Pis'ma v Zh. Èksper. Teoret. Fiz., 109:3 (2019),  147–151
  18. Generation of droplet quasi-Bessel beams using a semiconductor laser

    Optics and Spectroscopy, 127:5 (2019),  781–786
  19. Lateral mode discrimination in edge-emitting lasers with spatially modulated facet reflectance

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  211–215
  20. Studying the formation of antireflection coatings on multijunction solar cells

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:20 (2019),  15–17
  21. Vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal current aperture for compact atomic clocks

    Kvantovaya Elektronika, 49:2 (2019),  187–190
  22. Single-photon emitter at 80 K based on a dielectric nanoantenna with a CdSe/ZnSe quantum dot

    Pis'ma v Zh. Èksper. Teoret. Fiz., 108:3 (2018),  201–205
  23. Lasing in 9.6-$\mu$m quantum cascade lasers

    Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1559–1563
  24. Absolutely calibrated spectrally resolved measurements of Xe laser plasma radiation intensity in the EUV range

    Zhurnal Tekhnicheskoi Fiziki, 88:10 (2018),  1554–1558
  25. On the fabrication and study of lattice-matched heterostructures for quantum cascade lasers

    Fizika i Tekhnika Poluprovodnikov, 52:7 (2018),  812–815
  26. Investigation of the modified structure of a quantum cascade laser

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  133–137
  27. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  98–104
  28. Generation of droplet bessel beams using a semiconductor laser

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:19 (2018),  72–78
  29. Quantum-cascade lasers generating at the 4.8-$\mu$m wavelength at room temperature

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  17–23
  30. A design and new functionality of antiwaveguiding vertical-cavity surface-emitting lasers for a wavelength of 850 nm

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  85–94
  31. The influence of cavity design on the linewidth of near-ir single-mode vertical-cavity surface-emitting lasers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:1 (2018),  67–75
  32. Emission-line width and $\alpha$-factor of 850-nm single-mode vertical-cavity surface-emitting lasers based on InGaAs/AlGaAs quantum wells

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1697
  33. Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range

    Fizika i Tekhnika Poluprovodnikov, 51:9 (2017),  1176–1181
  34. InGaN/GaN light-emitting diode microwires of submillimeter length

    Fizika i Tekhnika Poluprovodnikov, 51:1 (2017),  101–104
  35. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
  36. On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1429–1433
  37. Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiency

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1425–1428
  38. Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1408–1413
  39. Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect

    Fizika i Tekhnika Poluprovodnikov, 50:6 (2016),  843–847
  40. Microdisk injection lasers for the 1.27-$\mu$m spectral range

    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  393–397
  41. A study of distributed dielectric Bragg reflectors for vertically emitting lasers of the near-IR range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  57–65
  42. Laser generation at 1.3 $\mu$m in vertical microcavities containing InAs/InGaAs quantum dot arrays under optical pumping

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:19 (2016),  70–79
  43. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

    Fizika i Tekhnika Poluprovodnikov, 49:10 (2015),  1379–1385
  44. Cylindrical multilayer metal–dielectric structures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:22 (2015),  61–65
  45. Power increase in Q-switched two-sectional quantum well lasers due to Stark effect

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:20 (2015),  30–36
  46. Effect of the photon lifetime on the characteristics of 850-nm vertical-cavity surface-emitting lasers with fully doped distributed Bragg reflectors and an oxide current aperture

    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1697–1703
  47. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1059–1064
  48. The effect of a UV preionization pulse on short-wave radiation output from a laser-produced-plasma source with a Xe gas-jet target

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014),  38–44
  49. Growth specifics of GaAs nanowires in mesa

    Fizika Tverdogo Tela, 55:4 (2013),  645–649
  50. Integrated characterization of multilayer periodic systems with nanosized layers as applied to Mo/Si structures

    Fizika Tverdogo Tela, 55:3 (2013),  591–601
  51. Single-spatial-mode semiconductor VCSELs with a nonplanar upper dielectric DBR

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  985–989
  52. Influence of optical losses on the dynamic characteristics of linear arrays of near-infrared vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  833–837
  53. Laser generation in microdisc resonators with InAs/GaAs quantum dots transferred on a silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013),  70–77
  54. Study of the structure and parameters of a KrF excimer laser beam

    Zhurnal Tekhnicheskoi Fiziki, 82:12 (2012),  72–78
  55. High-temperature lasing in a microring laser with an active region based on InAs/InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 46:8 (2012),  1063–1066
  56. Polarization dependences of electroluminescence and absorption of vertically correlated InAs/GaAs QDs

    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  96–102
  57. The effect of barrier width in coupled asymmetric double quantum well structure on passive mode-locking region of existence

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:7 (2012),  31–39
  58. A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

    Fizika i Tekhnika Poluprovodnikov, 45:9 (2011),  1266–1273
  59. Room-temperature optical absorption in the InAs/GaAs quantum-dot superlattice under an electric field

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1095–1101
  60. Matrices of 960-nm vertical-cavity surface-emitting lasers

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  836–839
  61. Passive mode-locked laser based on quantum dot superlattice

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:18 (2011),  31–36
  62. THIN-FILM MULTITRANSIT ALGAAS-PHOTOELEMENTS WITH 2-SIDED PHOTOSENSITIVITY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  193–197
  63. HIGH-VOLTAGE IMPULSE THYRISTORS ON THE BASIS OF WEAKLY ALLOYED ARSENIDE-GALLIUM

    Zhurnal Tekhnicheskoi Fiziki, 57:4 (1987),  771–777
  64. On the Determination of Excess Charge Carrier Lifetime in Lightly Doped $p-$ and $n$-Regions of Photon-Injection Transistors and Thyristors

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1897–1900
  65. Transients Processes in High-Voltage Photon-Injection Transistors Based on Heterostructure

    Fizika i Tekhnika Poluprovodnikov, 20:4 (1986),  677–682
  66. Electrically controlled trielectrode high-voltage switches of the subnanosecond range based on the $Ga\,As-Al\,Ga\,As$ multilayered heterostructure

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:21 (1986),  1281–1285
  67. Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986),  719–723
  68. POWERFUL IMPULSE TRANSISTORS BASED ON GALLIUM ARSENIDES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:16 (1984),  976–979
  69. Исследование транзисторов с оптической связью

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1618–1622
  70. Взаимное влияние широкозонного и узкозонного фотоэлементов при работе каскадных $n$-GaAs${-}p$-AlGaAs${-}n$-AlGaAs-гетерофотопреобразователей

    Fizika i Tekhnika Poluprovodnikov, 17:3 (1983),  446–448
  71. Фотоэлектролюминесценция в AlGaAs-гетероструктуpax

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1058–1061
  72. Импульсные тиристоры на основе гетероструктур GaAs$-$AlGaAs

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:11 (1983),  652–655

© Steklov Math. Inst. of RAS, 2026