Vavilova Lyudmila Sergeevna

Publications in Math-Net.Ru

1. Design optimization of InGaAsP/InP heterostructures of high-power laser diodes emitting at a wavelength of 1.55 $\mu$m
   
   Fizika i Tekhnika Poluprovodnikov, 59:3 (2025),  171–178
2. High power and repetition rate integral laser source (1060 nm) based on laser diode array and 2D multi-element opto-thyristor array as a high-speed current switch
   
   Kvantovaya Elektronika, 53:1 (2023),  11–16
3. Growth of thin-film AlGaN/GaN epitaxial heterostructures on hybrid substrates containing layers of silicon carbide and porous silicon
   
   Fizika i Tekhnika Poluprovodnikov, 56:6 (2022),  547–552
4. Ultranarrow-waveguide AlGaAs/GaAs/InGaAs lasers
   
   Kvantovaya Elektronika, 49:7 (2019),  661–665
5. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
   
   Fizika i Tekhnika Poluprovodnikov, 50:7 (2016),  869–876
6. Optimisation of cavity parameters for lasers based on AlGaInAsP/InP solid solutions (λ=1470 nm)
   
   Kvantovaya Elektronika, 45:10 (2015),  879–883
7. Structure and optical properties of thin Al$_2$O$_3$ films deposited by the reactive ion-plasma sputtering method on GaAs (100) substrates
   
   Fizika i Tekhnika Poluprovodnikov, 48:11 (2014),  1564–1569
8. On the temperature delocalization of carriers in GaAs/AlGaAs/InGaAs quantum-well heterostructures
   
   Fizika i Tekhnika Poluprovodnikov, 48:10 (2014),  1377–1382
9. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure
   
   Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1078–1081
10. Semiconductor lasers with internal wavelength selection
    
    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  124–128
11. 850-nm diode lasers based on AlGaAsP/GaAs heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 46:10 (2012),  1344–1348
12. Spinodal decomposition of Ga$_x$In$_{1-x}$As$_y$P$_{1-y}$ quaternary alloys
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1489–1497
13. Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate
    
    Fizika i Tekhnika Poluprovodnikov, 45:10 (2011),  1417–1421
14. Pulsed semiconductor lasers with higher optical strength of cavity output mirrors
    
    Fizika i Tekhnika Poluprovodnikov, 44:6 (2010),  817–821
15. Temperature delocalization of charge carriers in semiconductor lasers
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  688–693
16. Continuous short-wave ($\lambda=0,677\,\mu m$) injection-laser based on $In\,Ga\,As\,P/Ga\,As\,P$ RO DGS with $10$ mVt power
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:19 (1985),  1153–1157
17. Band lasers based on PO $In\,Ga\,As\,P/Ga\,As$ DHS ($\lambda\simeq0.87\,\mu m$) with the thin active area
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:4 (1985),  205–209
18. Low-Threshold Visible GalnAsP/GaAsP DH Lasers (${T=300}$ K, ${\lambda=0.70{-}0.66}\,\mu m,$ ${I_{\text{thresh}}\simeq1.5{-}3.2\,\text{кА}/\text{cm}^{2}}$)
    
    Fizika i Tekhnika Poluprovodnikov, 18:4 (1984),  757–758
19. Visible Low-Threshold Pulsed and Continuous InGaAsP/InGaP/GaAs DH Lasers in the $0.73{-}0.79 \mu m$ Region (${T=300}$ K, ${I_{n}=3.5{-}1.3\,\text{mA}/\text{cm}^{2}}$)
    
    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  162–165