Mikushkin V M

Publications in Math-Net.Ru

1. Unoccupied atomic-like states of gaas
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 112:12 (2020),  801–806
2. The diagram of $p$–$n$ junction formed on the $n$-GaAs surface by 1.5 keV Ar$^+$ ion beam
   
   Fizika i Tekhnika Poluprovodnikov, 54:12 (2020),  1396
3. Defect formation under nitrogen-ion implantation and subsequent annealing in GaAs structures with an uncovered surface and a surface covered with an AlN film
   
   Fizika i Tekhnika Poluprovodnikov, 53:4 (2019),  437–440
4. Quantum well on the $n$-GaAs surface irradiated by argon ions
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 107:4 (2018),  248–251
5. Composition and band structure of the native oxide nanolayer on the ion beam treated surface of the GaAs wafer
   
   Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  506
6. Defect structure of GaAs layers implanted with nitrogen ions
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:18 (2018),  24–30
7. The effect of dose of nitrogen-ion implantation on the concentration of point defects introduced into GaAs layers
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018),  44–50
8. Electron-stimulated reduction of the surface of graphite oxide
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:7 (2016),  1–9
9. Electron-stimulated reduction of graphite oxide
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 102:7 (2015),  497–501
10. Simulation of secondary electron transport in thin metal and fullerite films
    
    Nanosystems: Physics, Chemistry, Mathematics, 5:1 (2014),  81–85
11. Controlling graphite oxide bandgap width by reduction in hydrogen
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:20 (2011),  1–8
12. Chemical effect of inert argon beam on nitride nanolayer formed by ion implantation into GaAs surface
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 36:24 (2010),  40–47
13. MO-mechanism of autoionization state formations during the proton shock
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:11 (1985),  652–655