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Cirlin Georgii Èrnstovich

Publications in Math-Net.Ru

  1. Âëèÿíèå äèçàéíà áóôåðíîãî ñëîÿ íà ôîòîëþìèíåñöåíöèþ InAs êâàíòîâûõ òî÷åê, âûðàùåííûõ íà ïîäëîæêàõ GaAs/Si(100)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 52:7 (2026),  16–21
  2. GaN microrods growth by combined PA-MBE/HVPE method

    Fizika Tverdogo Tela, 67:6 (2025),  934–939
  3. Energy transfer in system of GaAs/AlGaAs quantum wells with different thickness and thick barriers

    Fizika Tverdogo Tela, 67:1 (2025),  28–30
  4. Growth of atomically smooth AlN layers on Si(111) substrates through an amorphous Si$_x$N$_y$ layer by plasma-assisted molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:14 (2025),  39–43
  5. Low-temperature growth of InAs nanowires and nanosheets on Si(100) substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:7 (2024),  27–30
  6. Retranslation of luminescence excitation during cascade transitions in hybrid nanostructures based on INP/INASP/INP NWs and CDSE/ZNS-TOPO QDs

    Optics and Spectroscopy, 131:10 (2023),  1403–1411
  7. Formation of InAs nanoislands on silicon surfaces and heterostructures based on them

    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  332–337
  8. Effect of nitrogen plasma treatment on the structural and optical properties of InGaN

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:5 (2023),  32–35
  9. Formation of InGaAs quantum dots in the body of AlGaAs nanowires via molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 56:7 (2022),  689–692
  10. Kinetics of spontaneous formation of core shell structure in (In,Ga)As nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 48:3 (2022),  32–35
  11. Specific features of structural stresses in InGaN/GaN nanowires

    Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  785–788
  12. Formation of hexagonal germanium on AlGaAs nanowire surfaces by molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 55:8 (2021),  621–624
  13. MBE growth of InGaN nanowires on SiC/Si(111) and Si(111) substrates

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:21 (2021),  32–35
  14. Complex refractive of the spectra index of mononucleotide films on silicon in the terahertz range

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:17 (2021),  29–31
  15. Directional radiation from GaAs quantum dots in AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:8 (2021),  47–50
  16. Nonlinear bleaching of InAs nanowires in the visible range

    Optics and Spectroscopy, 128:1 (2020),  128–133
  17. The significance of fitting in the description of luminescence kinetics of hybrid nanowires

    Optics and Spectroscopy, 128:1 (2020),  122–127
  18. Luminescence photodynamics of hybrid-structured InP/InAsP/InP nanowires passivated by a layer of ÒÎÐÎ-CdSe/ZnS quantum dots

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  952–957
  19. Specific growth features of nanostructures for terahertz quantum cascade lasers and their physical properties

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  902–905
  20. Synthesis of morphologically developed ingan nanostructures on silicon: influence of the substrate temperature on the morphological and optical properties

    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  884–887
  21. MBE-grown In$_x$ Ga$_{1-x}$ As nanowires with 50% composition

    Fizika i Tekhnika Poluprovodnikov, 54:6 (2020),  542
  22. Selective-area growth of GaN nanowires on patterned SiO$_{x}$/Si substrates by molecular beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:21 (2020),  32–35
  23. Nonradiative energy transfer in hybrid nanostructures with varied dimensionality

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1289–1292
  24. Synthesis by molecular beam epitaxy and properties of InGaN nanostructures of branched morphology on a silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:21 (2019),  48–50
  25. The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  37–40
  26. Polarization spectroscopy of an isolated quantum dot and an isolated quantum wire

    Fizika Tverdogo Tela, 60:12 (2018),  2445–2449
  27. Fine structure of levels and piezospectroscopy of A$^{+}$ centers in GaAs/AlGaAs quantum wells

    Fizika Tverdogo Tela, 60:2 (2018),  333–340
  28. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
  29. Solar cell based on core/shell nanowires

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1464–1468
  30. MBE growth and structural properties of GaP and InP nanowires on a SiC substrate with a graphene layer

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1317–1320
  31. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon

    Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
  32. MBE growth and structural properties of InAs and InGaAs nanowires with different mole fraction of In on Si and strongly mismatched SiC/Si(111) substrates

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  522
  33. GaAs wurtzite nanowires for hybrid piezoelectric solar cells

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  511
  34. The features of GaAs nanowire SEM images

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  510
  35. Optical properties of GaN nanowires grown by MBE on SiC/Si(111) hybrid substrate

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  509
  36. Core-shell III-nitride nanowire heterostructure: negative differential resistance and device application potential

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  475
  37. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources

    Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
  38. Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  23–27
  39. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
  40. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:3 (2018),  55–61
  41. Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1631
  42. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
  43. MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

    Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1525–1529
  44. Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme

    Fizika i Tekhnika Poluprovodnikov, 51:4 (2017),  540–546
  45. Directional emission from beryllium doped GaAs/AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  71–77
  46. Terahertz radiation generation in multilayer quantum-cascade heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:7 (2017),  86–94
  47. Fabrication of the structures with autocatalytic CdTe nanowires using magnetron sputtering deposition

    Fizika Tverdogo Tela, 58:12 (2016),  2314–2318
  48. Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

    Fizika Tverdogo Tela, 58:10 (2016),  1886–1889
  49. Polarization of the photoluminescence of quantum dots incorporated into quantum wires

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1675–1678
  50. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
  51. Resonant features of the terahertz generation in semiconductor nanowires

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1587–1591
  52. Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1543–1547
  53. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
  54. Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures

    Fizika i Tekhnika Poluprovodnikov, 50:10 (2016),  1395–1400
  55. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range

    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
  56. Generation of THz radiation by AlGaAs nanowires

    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015),  348–353
  57. Temperature quenching of spontaneous emission in tunnel-injection nanostructures

    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1531–1539
  58. Photoelectric properties of an array of axial GaAs/AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  71–79
  59. Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  33–41
  60. Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair

    Fizika i Tekhnika Poluprovodnikov, 48:9 (2014),  1209–1216
  61. Study of the electrical properties of individual (Ga,Mn)As nanowires

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  358–363
  62. A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  36–43
  63. New method of determining the Young's Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope

    Fizika Tverdogo Tela, 55:11 (2013),  2118–2122
  64. Computer simulation of the structure and Raman spectra of GaAs polytypes

    Fizika Tverdogo Tela, 55:6 (2013),  1132–1141
  65. Growth specifics of GaAs nanowires in mesa

    Fizika Tverdogo Tela, 55:4 (2013),  645–649
  66. Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1425–1430
  67. Composite system based on CdSe/ZnS quantum dots and GaAs nanowires

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1356–1360
  68. Ultra-low density InAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1335–1338
  69. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1033–1036
  70. Formation of structures with noncatalytic CdTe nanowires

    Fizika i Tekhnika Poluprovodnikov, 47:7 (2013),  865–868
  71. Photovoltaic properties of GaAs:Be nanowire arrays

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  797–801
  72. Optical anisotropy of InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
  73. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
  74. Effect of diffusion from a lateral surface on the rate of gan nanowire growth

    Fizika i Tekhnika Poluprovodnikov, 46:6 (2012),  857–860
  75. Formation of (Ga,Mn)As nanowires and study of their magnetic properties

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  188–193
  76. Effect of postgrowth heat treatment on the structural and optical properties of InP/InAsP/InP nanowires

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  184–187
  77. Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  78–83
  78. Studying the formation of self-assembled (In,Mn)As quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  21–27
  79. Specific features of Raman spectra of III–V nanowhiskers

    Fizika Tverdogo Tela, 53:7 (2011),  1359–1366
  80. Piezoelectric effect in GaAs nanowires

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1114–1116
  81. Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1079–1083
  82. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  840–846
  83. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  441–445
  84. InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics

    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1084–1092
  85. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer

    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  636–641
  86. The initial stage of growth of crystalline nanowhiskers

    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  114–117

© Steklov Math. Inst. of RAS, 2026