Samsonenko Yurii Borisovich

Publications in Math-Net.Ru

1. Random laser generation in ZnO nanocrystals grown by hydrothermal method
   
   Fizika Tverdogo Tela, 66:1 (2024),  17–21
2. The influence of EL2 centers on the photoelectric response of an array of radial GaAs/AlGaAs nanowires
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:16 (2019),  37–40
3. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon
   
   Fizika i Tekhnika Poluprovodnikov, 52:11 (2018),  1304–1307
4. Hybrid GaAs/AlGaAs nanowire – quantum dot system for single photon sources
   
   Fizika i Tekhnika Poluprovodnikov, 52:4 (2018),  469
5. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
   
   Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
6. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
7. Directional emission from beryllium doped GaAs/AlGaAs nanowires
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  71–77
8. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
   
   Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
9. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon
   
   Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
10. Multilayer heterostructures for quantum-cascade lasers operating in the terahertz frequency range
    
    Fizika i Tekhnika Poluprovodnikov, 50:5 (2016),  674–678
11. Generation of THz radiation by AlGaAs nanowires
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015),  348–353
12. Photoelectric properties of an array of axial GaAs/AlGaAs nanowires
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  71–79
13. Study of the electrical properties of individual (Ga,Mn)As nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  358–363
14. A hybrid system of GaAs whisker nanocrystals and PbS quantum dots on silicon substrate
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014),  36–43
15. Computer simulation of the structure and Raman spectra of GaAs polytypes
    
    Fizika Tverdogo Tela, 55:6 (2013),  1132–1141
16. Growth specifics of GaAs nanowires in mesa
    
    Fizika Tverdogo Tela, 55:4 (2013),  645–649
17. Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals
    
    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1425–1430
18. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties
    
    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1033–1036
19. Photovoltaic properties of GaAs:Be nanowire arrays
    
    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  797–801
20. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
21. Studying the formation of self-assembled (In,Mn)As quantum dots
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  21–27
22. Specific features of Raman spectra of III–V nanowhiskers
    
    Fizika Tverdogo Tela, 53:7 (2011),  1359–1366
23. Piezoelectric effect in GaAs nanowires
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1114–1116
24. Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties
    
    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1079–1083
25. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography
    
    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  840–846
26. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces
    
    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  441–445
27. InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
    
    Fizika i Tekhnika Poluprovodnikov, 44:8 (2010),  1084–1092
28. Current-voltage characteristics of silicon-doped GaAs nanowhiskers with a protecting AlGaAs coating overgrown with an undoped GaAs layer
    
    Fizika i Tekhnika Poluprovodnikov, 44:5 (2010),  636–641
29. The initial stage of growth of crystalline nanowhiskers
    
    Fizika i Tekhnika Poluprovodnikov, 44:1 (2010),  114–117