RUS  ENG
Full version
PEOPLE

Bouravlev Aleksey Dmitrievich

Publications in Math-Net.Ru

  1. Fabrication of a blazed diffraction grating with variable line space

    Zhurnal Tekhnicheskoi Fiziki, 95:10 (2025),  1861–1869
  2. High-frequency low-blaze-angle Mo/Be diffraction gratings – efficiency study

    Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1128–1135
  3. High-frequency multilayer diffraction Si-gratings with a low blaze angle – fabrication

    Zhurnal Tekhnicheskoi Fiziki, 94:7 (2024),  1119–1127
  4. Resonances of relief triangular gratings for terahertz input/output in À$_3$Â$_5$ semiconductors

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 50:19 (2024),  49–52
  5. Blazed silicon gratings for soft X-ray and extreme ultraviolet radiation: the effect of groove profile shape and random roughness on the diffraction efficiency

    Zhurnal Tekhnicheskoi Fiziki, 93:7 (2023),  859–866
  6. Top-down formation of biocompatible SiC nanotubes

    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  343–347
  7. Terahertz radiation sources with an active region based on super-multiperiod AlGaAs/GaAs superlattices

    Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  321–326
  8. High-precision characterization of super-multiperiod AlGaAs/GaAs superlattices using X-ray reflectometry on a synchrotron source

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021),  7–10
  9. Deep X-ray reflectometry of supermultiperiod A$_3$B$_5$ structures with quantum wells grown by molecular-beam epitaxy

    Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020),  1906–1912
  10. Photoemission studies of the electronic structure of GaN grown by plasma assisted molecular beam epitaxy

    Fizika Tverdogo Tela, 61:12 (2019),  2294–2297
  11. Method for controlling the polarity of gallium nitride layers in epitaxial synthesis of GaN/AlN heterostructures on hybrid SiC/Si substrates

    Fizika Tverdogo Tela, 61:12 (2019),  2289–2293
  12. The metal-assisted photochemical etching of N- and Ga-face GaN epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 53:12 (2019),  1726–1732
  13. On the specific features of the plasma-assisted mbe synthesis of $n^{+}$-GaN layers on GaN/$c$-Al$_{2}$O$_{3}$ templates

    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1212–1217
  14. Photoelectric properties of GaN layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates and SiC/Si(111) epitaxial layers

    Fizika i Tekhnika Poluprovodnikov, 53:2 (2019),  190–198
  15. Polarization spectroscopy of an isolated quantum dot and an isolated quantum wire

    Fizika Tverdogo Tela, 60:12 (2018),  2445–2449
  16. Electrical properties of GaAs nanowires grown on graphene/SiC hybrid substrates

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1507–1511
  17. Solar cell based on core/shell nanowires

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1464–1468
  18. Features of the initial stage of GaN growth on Si(111) substrates by nitrogen-plasma-assisted molecular-beam epitaxy

    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1425–1429
  19. The features of GaAs nanowire SEM images

    Fizika i Tekhnika Poluprovodnikov, 52:5 (2018),  510
  20. Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  23–27
  21. GaP/Si(111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

    Fizika i Tekhnika Poluprovodnikov, 52:1 (2018),  5–9
  22. Ultrafast dynamics of photoinduced electron–hole plasma in semiconductor nanowires

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1631
  23. GaP/Si (111) nanowire crystals synthesized by molecular-beam epitaxy with switching between the hexagonal and cubic phases

    Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1587
  24. Directional emission from beryllium doped GaAs/AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 43:17 (2017),  71–77
  25. Effect of a terahertz cavity on the conductivity of short-period GaAs/AlAs superlattices

    Pis'ma v Zh. Èksper. Teoret. Fiz., 103:2 (2016),  128–131
  26. Polarization of the photoluminescence of quantum dots incorporated into quantum wires

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1675–1678
  27. Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1644–1646
  28. Resonant features of the terahertz generation in semiconductor nanowires

    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1587–1591
  29. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon

    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1441–1444
  30. Generation of THz radiation by AlGaAs nanowires

    Pis'ma v Zh. Èksper. Teoret. Fiz., 102:5 (2015),  348–353
  31. Modeling the antireflective properties of composite materials based on semiconductor filamentary nanocrystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:13 (2015),  16–24
  32. Photoelectric properties of an array of axial GaAs/AlGaAs nanowires

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:9 (2015),  71–79
  33. Optical limiting in solutions of InP and GaAs nanowires and hybrid systems based on such nanocrystals

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:3 (2015),  33–41
  34. Study of the electrical properties of individual (Ga,Mn)As nanowires

    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  358–363
  35. New method of determining the Young's Modulus of (Ga,Mn)As nanowhiskers with a scanning electron microscope

    Fizika Tverdogo Tela, 55:11 (2013),  2118–2122
  36. Computer simulation of the structure and Raman spectra of GaAs polytypes

    Fizika Tverdogo Tela, 55:6 (2013),  1132–1141
  37. Growth specifics of GaAs nanowires in mesa

    Fizika Tverdogo Tela, 55:4 (2013),  645–649
  38. Effect of an arsenic flux on the molecular-beam epitaxy of self-catalytic (Ga,Mn)As nanowire crystals

    Fizika i Tekhnika Poluprovodnikov, 47:10 (2013),  1425–1430
  39. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

    Fizika i Tekhnika Poluprovodnikov, 47:8 (2013),  1033–1036
  40. Photovoltaic properties of GaAs:Be nanowire arrays

    Fizika i Tekhnika Poluprovodnikov, 47:6 (2013),  797–801
  41. Optical anisotropy of InGaAs quantum dots

    Fizika i Tekhnika Poluprovodnikov, 47:1 (2013),  87–91
  42. Light-emitting tunneling nanostructures based on quantum dots in a Si and GaAs matrix

    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1492–1503
  43. Formation of (Ga,Mn)As nanowires and study of their magnetic properties

    Fizika i Tekhnika Poluprovodnikov, 46:2 (2012),  188–193
  44. Molecular-beam epitaxy of (Ga,Mn)As crystal nanowires on surface GaAs(100)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:17 (2012),  78–83
  45. Studying the formation of self-assembled (In,Mn)As quantum dots

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:10 (2012),  21–27
  46. Specific features of Raman spectra of III–V nanowhiskers

    Fizika Tverdogo Tela, 53:7 (2011),  1359–1366
  47. Piezoelectric effect in GaAs nanowires

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1114–1116
  48. Growth of single GaAs nanowhiskers on the tip of a tungsten needle and their electrical properties

    Fizika i Tekhnika Poluprovodnikov, 45:8 (2011),  1079–1083
  49. Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

    Fizika i Tekhnika Poluprovodnikov, 45:6 (2011),  840–846
  50. Study of processes of self-catalyzed growth of gaas crystal nanowires by molecular-beam epitaxy on modified Si (111) surfaces

    Fizika i Tekhnika Poluprovodnikov, 45:4 (2011),  441–445

© Steklov Math. Inst. of RAS, 2026