Shmagin Vyacheslav Borisovich

Publications in Math-Net.Ru

1. Modeling of transport and emission characteristics of light-emitting lateral silicon $p^+$–$i$–$n^+$ transistor with self-assembled Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 59:4 (2025),  242–249
2. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
3. Antimony segregation in Si layers grown by molecular beam epitaxy on Si wafers with different crystallographic orientations
   
   Fizika i Tekhnika Poluprovodnikov, 51:12 (2017),  1611–1615
4. Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy
   
   Fizika i Tekhnika Poluprovodnikov, 51:11 (2017),  1538–1542
5. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
6. Hodographs in diode-structure diagnostics
   
   Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1492–1496
7. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
8. Specific features of the nonradiative relaxation of Er$^{3+}$ ions in epitaxial Si structures
   
   Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1626–1631
9. Features of impurity photoconductivity in Si:Er/Si epitaxial diodes
   
   Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1513–1516
10. Natural fluctuations in tunneling-current distribution over the area of a reverse-biased silicon $p$–$n$ junction
    
    Fizika i Tekhnika Poluprovodnikov, 46:1 (2012),  134–139
11. Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions
    
    Fizika i Tekhnika Poluprovodnikov, 45:11 (2011),  1486–1488
12. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy
    
    Fizika i Tekhnika Poluprovodnikov, 45:1 (2011),  132–135
13. Electroluminescence at a wavelength of 1.5 $\mu$m in Si:Er/Si diode structures doped with Al, Ga, and B acceptors
    
    Fizika i Tekhnika Poluprovodnikov, 44:12 (2010),  1645–1648
14. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes $p^+/n^+/n$-Si:Er
    
    Fizika i Tekhnika Poluprovodnikov, 44:11 (2010),  1533–1538
15. Increase of resolution in deep-level relaxation spectroscopy with two-channel strobe-integrator
    
    Fizika i Tekhnika Poluprovodnikov, 26:5 (1992),  955–958