Shengurov Dmitry Vladimirovich

Publications in Math-Net.Ru

1. Fabrication of dielectric resonators on the light-emitting GeSi heterostructures
   
   Zhurnal Tekhnicheskoi Fiziki, 95:1 (2025),  128–135
2. Laser emission in a mesastructure with HgCdTe-based quantum wells with a periodic ridge system
   
   Fizika i Tekhnika Poluprovodnikov, 59:10 (2025),  608–613
3. Optical properties of laser mesastructures with HgCdTe quantum wells formed by ion etching
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 51:19 (2025),  7–10
4. Luminescent properties of ordered arrays of silicon disk-like resonators with embedded GeSi quantum dots
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  414–420
5. Effect of optical excitation conditions on the spectral and temporal characteristics of the radiation from two-dimensional photonic crystals with Ge(Si) nanoislands
   
   Fizika i Tekhnika Poluprovodnikov, 57:4 (2023),  251–258
6. Planar (lateral) light-emitting diodes with Ge(Si) nanoislands embedded in a photonic crystal
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:22 (2023),  12–15
7. Luminescent response of photonic crystals with embedded Ge nanoislands with different hole etching depths
   
   Pisma v Zhurnal Tekhnicheskoi Fiziki, 49:10 (2023),  29–32
8. Formation and optical properties of locally strained Ge microstructures embedded into cavities
   
   Fizika i Tekhnika Poluprovodnikov, 55:5 (2021),  420–426
9. Locally strained Ge/SOI structures with improved heat sink as an active media for silicon optoelectronics
   
   Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1360–1365
10. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
11. Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1685–1689
12. Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1497–1500
13. Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties
    
    Fizika i Tekhnika Poluprovodnikov, 50:3 (2016),  350–353
14. Terahertz emission at impurity electrical breakdown in Si(Li)
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:20 (2016),  18–23
15. Hodographs in diode-structure diagnostics
    
    Fizika i Tekhnika Poluprovodnikov, 49:11 (2015),  1492–1496
16. Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014),  913–918
17. Specific features of the nonradiative relaxation of Er$^{3+}$ ions in epitaxial Si structures
    
    Fizika i Tekhnika Poluprovodnikov, 48:12 (2014),  1626–1631
18. Si$_{1-x}$Ge$_x$/Si heterostructures grown by molecular-beam epitaxy on silicon-on-sapphire substrates
    
    Fizika i Tekhnika Poluprovodnikov, 48:3 (2014),  417–420
19. Features of impurity photoconductivity in Si:Er/Si epitaxial diodes
    
    Fizika i Tekhnika Poluprovodnikov, 47:11 (2013),  1513–1516
20. Low-temperature growth of silicon epitaxial layers codoped with erbium and oxygen atoms
    
    Fizika i Tekhnika Poluprovodnikov, 47:3 (2013),  410–413
21. Effect of silicon spacer thickness on the electroluminescence of multilayer structures with self-assembled Ge(Si)/Si(001) islands
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1448–1452
22. Mechanism of the subband excitation of photoluminescence from erbium ions in silicon under high-intensity optical pumping
    
    Fizika i Tekhnika Poluprovodnikov, 46:11 (2012),  1435–1439
23. Comparative analysis of radiation effects on the electroluminescence of Si and SiGe/Si(001) heterostructures with self-assembled Islands
    
    Fizika i Tekhnika Poluprovodnikov, 45:2 (2011),  230–234
24. Boron doping of Si$_{1-x}$Ge$_x$/Si heterostructures grown by silicon sublimation in germane medium
    
    Pisma v Zhurnal Tekhnicheskoi Fiziki, 37:13 (2011),  24–30