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Andreev V M

Publications in Math-Net.Ru

  1. The effect of charge transport mechanisms on the efficiency of Al$_{x}$Ga$_{1-x}$As/GaAs photodiodes

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:22 (2018),  33–41
  2. LOW-THRESHOLD (IN=2.0MA, 300-K) HIGH-PERFORMANCE (ETA-EXT=68-PERCENT) ALGAAS-HETEROLASERS OBTAINED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:5 (1991),  1–5
  3. ALGAAS/GAAS HETEROSTRUCTURES OBTAINED ON SILICON BY LIQUID-PHASE EPITAXY METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 17:3 (1991),  1–3
  4. Низкопороговые квантово-размерные AlGaAs-гетеролазеры для диапазона длин волн 730$-$850 нм, полученные методом низкотемпературной ЖФЭ

    Fizika i Tekhnika Poluprovodnikov, 24:10 (1990),  1757–1761
  5. Фотолюминесцентные свойства GaAs, легированного рением

    Fizika i Tekhnika Poluprovodnikov, 24:7 (1990),  1194–1199
  6. Компенсация кремния при дрейфе лития из ограниченного резервуара

    Fizika i Tekhnika Poluprovodnikov, 24:3 (1990),  585–587
  7. PHOTOTRANSDUCERS BASED ON ALGAAS-GAAS HETEROSTRUCTURES FOR SCINTILLATION DETECTORS OF IONIZING-RADIATIONS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  56–59
  8. ALCAAS SINGLE-FREQUENCY QUANTUM-DIMENSIONAL LASER-DIODES WITH THRESHOLD CURRENT OF 1-MA GENERATION OBTAINED BY LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:19 (1990),  32–35
  9. SUPER LOW-THRESHOLD (IN =1,3MA,T=300-K) QUANTUM-DIMENSIONAL ALGAAS LASERS WITHOUT REFLECTING MIRROR COATINGS GROWN BY LPE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  41–44
  10. STUDY OF COMPOSITION DISTRIBUTION IN ALGAAS HETEROSTRUCTURES WITH QUANTUM-DIMENSIONAL LAYERS BY THE RAMAN-SCATTERING TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:9 (1990),  7–12
  11. LOW THRESHOLD (IN=3.0MA, T=300-K) QUANTUMDIMENSIONAL ALGAAS LASER-DIODES WITH OVERGROWN HETEROSTRUCTURE PREPARED BY THE LIQUID-PHASE EPITAXY TECHNIQUE

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 16:5 (1990),  66–71
  12. THIN-FILM SOLAR ELEMENTS WITH 2-SIDED SENSITIVITY AT (AL, GA)AS HETEROSTRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 59:11 (1989),  199–201
  13. Фотолюминесцентные свойства твердых растворов In$_{0.53}$Ga$_{0.47}$As, легированных рением

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  612–615
  14. Фотоэлектрические свойства AlGaAs$-$GaAs-гетероструктур с туннельно-тонким «широкозонным окном»

    Fizika i Tekhnika Poluprovodnikov, 23:4 (1989),  597–600
  15. Кинетика тока, ограниченного объемным зарядом, в полупроводниковых $n^{+}{-}p{-}p^{+}$-структурах

    Fizika i Tekhnika Poluprovodnikov, 23:3 (1989),  478–482
  16. SEMICONDUCTING LASER WITH THE BUILT-IN EXCITON STARK QUALITY MODULATOR BASED ON ALGAAS DHS WITH SINGLE QUANTUM WELL GAAS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 15:7 (1989),  20–24
  17. ORIENTATION EFFECTS UNDER LIQUID-PHASE EPITAXY OF ALGAAS STRUCTURES

    Zhurnal Tekhnicheskoi Fiziki, 58:9 (1988),  1789–1792
  18. Определение профиля концентрации лития при его дрейфе в кремнии по емкостным измерениям

    Fizika i Tekhnika Poluprovodnikov, 22:11 (1988),  2039–2042
  19. Квантово-размерные низкопороговые AlGaAs-гетеролазеры, полученные методом низкотемпературной жидкофазной эпитаксии

    Fizika i Tekhnika Poluprovodnikov, 22:10 (1988),  1775–1779
  20. Диффузионные процессы в пакете носителей, дрейфующих в поле $p{-}n$-перехода

    Fizika i Tekhnika Poluprovodnikov, 22:9 (1988),  1629–1633
  21. Изменение градиента концентрации лития при компенсации полупроводников методом дрейфа ионов

    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1526–1528
  22. Влияние радиации на фотоэлектрические параметры AlGaAs${-}(p{-}n)$-гетероструктур

    Fizika i Tekhnika Poluprovodnikov, 22:8 (1988),  1391–1395
  23. Переходный ток, ограниченный объемным зарядом, в недообедненных структурах с блокирующими контактами

    Fizika i Tekhnika Poluprovodnikov, 22:6 (1988),  1096–1100
  24. MULTIDIMENSIONAL STRIP AL-GA-AS-HETEROLASERS OF A MILLIAMPERIC RANGE OF CURRENTS (IN=2.1-MA, T=300-K), OBTAINED BY METHODS OF LOW-TEMPERATURE LIQUID-PHASE EPITAXY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:22 (1988),  2057–2060
  25. LOW-THRESHOLD (IN=6.2-MA, T=300-K) BAND QUANTUM DIMENSIONAL ALGAAS-HETEROLASERS CREATED BY THE LOW-TEMPERATURE LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:17 (1988),  1537–1540
  26. HETEROSTRUCTURES WITH TUNNEL THIN (20-50-A) SURFACE ALGAAS-LAYERS OBTAINED BY THE LPE METHOD

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:15 (1988),  1429–1433
  27. THIN-FILM MULTITRANSIT ALGAAS-PHOTOELEMENTS WITH 2-SIDED PHOTOSENSITIVITY

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:3 (1988),  193–197
  28. LIQUID-PHASE ALGAAS-STRUCTURES WITH QUANTUM-DIMENTIONAL LAYERS OF THE APPROXIMATELY-20A WIDTH

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  171–176
  29. INJECTION ANNEALING OF DEFECTS OF ALGAAS-STRUCTURES OF SOLAR ELEMENTS DURING EXPOSURE TO RADIATION

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:2 (1988),  121–125
  30. VILET PALGAAS-PGAAS-NGAAS-PHOTOELEMENTS WITH SUPERTHIN (30-300 A) WIDE-ZONE LAYERS

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 14:1 (1988),  76–79
  31. HIGH-EFFICIENT THIN-FILM SOLAR ELEMENTS (TSE) FOR THE CONVERSION OF CONCENTRATED RADIATION

    Zhurnal Tekhnicheskoi Fiziki, 57:9 (1987),  1805–1810
  32. Theory of Semiconductor Compensation by the Method of Ionic Drift of Doping Impurity

    Fizika i Tekhnika Poluprovodnikov, 21:9 (1987),  1673–1680
  33. Photoluminescence of Quantum-Dimensional Layers in AlGaAs-Heterostructures Produced by the Method of Low-Temperature Liquid-Phase Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 21:7 (1987),  1212–1216
  34. Reduction of surface recombination current in R-P $Al\,Ga\,As/Ga\,As$ transitions

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:24 (1987),  1481–1485
  35. Process of Concentration Establishment in a Drifting Packet of Excess Carriers Injected into the $p{-}n$-Junction

    Fizika i Tekhnika Poluprovodnikov, 20:10 (1986),  1856–1860
  36. On the Use of Electrooptical Effect for Studying Space-Charge Region of $p{-}n$ Structures

    Fizika i Tekhnika Poluprovodnikov, 20:7 (1986),  1234–1238
  37. High-Efficiency Information-Energy AlGaAs-GaAs Photoreceivers for Fiber-Optical Communication Lines

    Fizika i Tekhnika Poluprovodnikov, 20:3 (1986),  435–439
  38. Low-Threshold (${j_{\text{п}}=230\,\text{А/см}^{2}}$, ${T=300}$ K) AlGaAs Double-Heterostructure Lasers with Separate Limitation Produced by the Method of Liquid Epitaxy

    Fizika i Tekhnika Poluprovodnikov, 20:2 (1986),  381–383
  39. Thin-film $Al\,Ga\,As-Ga\,As$ solar photoelements for the transformation of concentrated solar-radiation

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:19 (1986),  1197–1202
  40. $Al\,Ga\,As$-heterostructures with quantum-dimensional layers, obtained by low-temperature liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:18 (1986),  1089–1093
  41. Heterojunction bipolar-transistors, obtained by low-temperature liquid-phase epitaxy

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:12 (1986),  719–723
  42. Low-temperature liquid-phase epitaxy of $Al\,Ga\,As$-heterostructures with submicron ($10^{-1}-10^{-2}$-mu-m) layers

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 12:9 (1986),  533–537
  43. BEHAVIOR OF ALGAAS HETEROPHOTOELEMENTS AT LOW (10(-1)-10(-3)VT-CM2) EXPOSURE LEVEL AT THE 173-373-K TEMPERATURE-RANGE

    Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985),  2004–2009
  44. EFFECT OF THE AL-GA-AS HETEROSTRUCTURE SURFACE ON ZN DIFFUSION FROM GASEOUS MEDIA

    Zhurnal Tekhnicheskoi Fiziki, 55:9 (1985),  1844–1846
  45. INVESTIGATION OF PIN-PHOTODIODES BASED ON INGAASP/INP

    Zhurnal Tekhnicheskoi Fiziki, 55:8 (1985),  1566–1569
  46. TRANSITION LAYER EFFECT ON THE SPECTRAL DISTRIBUTION OF THE ALGAAS HETEROPHOTOELEMENT PHOTO-RESPONSE

    Zhurnal Tekhnicheskoi Fiziki, 55:6 (1985),  1124–1129
  47. Low Rate of Surface Recombination (${S =10^{4}}\,cm/s$) in Epitaxial $n$-Туре GaAs

    Fizika i Tekhnika Poluprovodnikov, 19:10 (1985),  1826–1829
  48. Study of Leakage Currents of Planar $p{-}n$ Junctions in InP and of $p{-}i{-}n$ Structures Based on InGaAs/InP

    Fizika i Tekhnika Poluprovodnikov, 19:4 (1985),  668–673
  49. Heterophotocells with Low Value of Saturation Back Current

    Fizika i Tekhnika Poluprovodnikov, 19:2 (1985),  276–281
  50. Photoluminescent Properties and Electron Structure of Anodic-Oxidized $n$-InP Surface

    Fizika i Tekhnika Poluprovodnikov, 19:1 (1985),  110–113
  51. Thermostable concentrator solar-cells based on $Al\,Ga\,As$-heterostructures

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 11:14 (1985),  853–857
  52. STUDY OF ZINC DIFFUSION FROM GAS PHASES IN ALXGA1-XAS SOLID-SOLUTIONS

    Zhurnal Tekhnicheskoi Fiziki, 54:7 (1984),  1320–1324
  53. THIN-FILM ALGAAS HETEROPHOTOELEMENTS WITH A REMOVED GAAS BASE

    Zhurnal Tekhnicheskoi Fiziki, 54:6 (1984),  1215–1218
  54. SOLAR PHOTOCELLS BASED ON INP AND GAXIN1-XASYP1-Y SOLID-SOLUTIONS

    Zhurnal Tekhnicheskoi Fiziki, 54:4 (1984),  862–864
  55. Влияние встроенных электрических полей на температурную стабильность параметров Al$-$Ga$-$As-гетерофотоэлементов

    Fizika i Tekhnika Poluprovodnikov, 18:11 (1984),  1979–1984
  56. Cascade Si$-$AlGaAs Solar Photocells

    Fizika i Tekhnika Poluprovodnikov, 18:1 (1984),  121–125
  57. ELEMENTS OF CASCADE SOLAR PHOTOTRANSFORMATIONS BASED ON INP-GAINPAS AND INP-CDS HETEROSTRUCTURES

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 10:1 (1984),  51–55
  58. CALCULATION OF CASCADE SOLAR ELEMENTS ON THE BASIS OF A3B5 COMPOUNDS

    Zhurnal Tekhnicheskoi Fiziki, 53:10 (1983),  2025–2031
  59. SOLAR HETEROPHOTOELEMENTS WITH AN INCREASED DEPTH OF P-N TRANSITION POSITION

    Zhurnal Tekhnicheskoi Fiziki, 53:8 (1983),  1658–1660
  60. Исследование транзисторов с оптической связью

    Fizika i Tekhnika Poluprovodnikov, 17:9 (1983),  1618–1622
  61. Высокоэффективные $p$AlGaAs${-}p$GaAs${-}n$GaAs солнечные фотоэлементы с КПД 19% (AM 0) и 24% (AM 1.5)

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:20 (1983),  1251–1254
  62. Фотоэлектролюминесценция в AlGaAs-гетероструктуpax

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:17 (1983),  1058–1061
  63. Фотоэлементы на основе гетеропереходов в системе Al$_{y}$Ga$_{1-y}$As$_{1-x}$Sb$_{x}$

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:12 (1983),  734–737
  64. Концентраторные фотоэлектрические батареи на основе AlGaAs$-$GaAs солнечных элементов

    Pisma v Zhurnal Tekhnicheskoi Fiziki, 9:2 (1983),  102–104
  65. γ-Formyl Acids

    Usp. Khim., 37:4 (1968),  559–580
  66. The stereochemistry of the diene-condensation of 1-$\alpha$-acetoxyvinyl-$\Delta^1$-cyclohexene with maleic anhydride

    Dokl. Akad. Nauk SSSR, 119:5 (1958),  945–948

  67. Андрей Георгиевич Забродский, к 75-летию со дня рождения

    Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021),  893–894

© Steklov Math. Inst. of RAS, 2026