Tsyplenkov Veniamin Vladimirovich

Publications in Math-Net.Ru

1. Multi-phonon relaxation of the 1$s(T_2)$ triplet of neutral magnesium donors in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 58:1 (2024),  7–13
2. Double magnesium donors as a potential active medium in the terahertz range
   
   Fizika i Tekhnika Poluprovodnikov, 57:6 (2023),  455–460
3. Optical excitation of spin-triplet states of two-electron donors in silicon
   
   Fizika i Tekhnika Poluprovodnikov, 57:5 (2023),  327–331
4. The mechanism of stimulated Raman scattering of light in silicon doped with helium-like donors
   
   Kvantovaya Elektronika, 53:5 (2023),  401–405
5. Detection of Ramsey oscillations in germanium doped with shallow donors upon the excitation of the $1s\to2p_0$ transition
   
   Pis'ma v Zh. Èksper. Teoret. Fiz., 116:3 (2022),  139–145
6. Photon echo in germanium with shallow donors
   
   Fizika i Tekhnika Poluprovodnikov, 56:8 (2022),  728–733
7. Quantitative analysis of valley–orbit coupling in germanium doped with group-V donors
   
   Fizika i Tekhnika Poluprovodnikov, 55:10 (2021),  901–907
8. Intervalley relaxation processes of shallow donor states in germanium
   
   Fizika i Tekhnika Poluprovodnikov, 55:9 (2021),  807–812
9. Relaxation of the excited states of arsenic in strained germanium
   
   Fizika i Tekhnika Poluprovodnikov, 54:10 (2020),  1145–1149
10. Influence of uniaxial stress along [110] direction on relaxation of arsenic shallow donor states in germanium
    
    Fizika i Tekhnika Poluprovodnikov, 54:9 (2020),  918–921
11. Frequency tuning of terahertz stimulated emission under the intracenter optical excitation of uniaxially stressed Si:Bi
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  816–821
12. On the possibility of Ramsey interference in germanium doped with shallow impurities
    
    Fizika i Tekhnika Poluprovodnikov, 54:8 (2020),  807–811
13. Relaxation times and population inversion of excited states of arsenic donors in germanium
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 110:10 (2019),  677–682
14. On the intracenter relaxation of shallow antimony donors in strained germanium
    
    Fizika i Tekhnika Poluprovodnikov, 53:10 (2019),  1372–1377
15. Chemical shift and exchange interaction energy of the $1s$ states of magnesium donors in silicon. The possibility of stimulated emission
    
    Fizika i Tekhnika Poluprovodnikov, 53:9 (2019),  1263–1266
16. On the intracenter relaxation of shallow arsenic donors in stressed germanium. Population inversion under optical excitation
    
    Fizika i Tekhnika Poluprovodnikov, 52:12 (2018),  1469–1476
17. Low-temperature intracenter relaxation times of shallow donors in germanium
    
    Pis'ma v Zh. Èksper. Teoret. Fiz., 106:9 (2017),  555–560
18. Polarization of the induced THz emission of donors in silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:12 (2016),  1701–1705
19. Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 50:11 (2016),  1479–1483
20. Terahertz-range spontaneous emission under the optical excitation of donors in uniaxially stressed bulk silicon and SiGe/Si heterostructures
    
    Fizika i Tekhnika Poluprovodnikov, 49:1 (2015),  15–20
21. Terahertz lasers based on intracentre transitions of group V donors in uniaxially deformed silicon
    
    Kvantovaya Elektronika, 45:2 (2015),  113–120
22. On the phonon-assisted relaxation of excited bismuth donor states in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 48:8 (2014),  1044–1049
23. Shallow-donor lasers in uniaxially stressed silicon
    
    Fizika i Tekhnika Poluprovodnikov, 47:2 (2013),  199–205